High-density memory device with planar thin film transistor (TFT) selector and methods for making the same
A memory device and method of making the same, the memory device including bit lines disposed on a substrate; memory cells disposed on the bit lines; a first dielectric layer disposed on the substrate, surrounding the bit lines and the memory cells; a second dielectric layer disposed on the first dielectric layer; thin film transistors (TFTs) embedded in the second dielectric layer and configured to selectively provide electric power to corresponding memory cells, the TFTs comprising drain lines disposed on the memory cells, source lines disposed on the first dielectric layer, and selector layers electrically connected to the source lines and the drain lines; and word lines disposed on the second dielectric layer and electrically connected to the TFTs.
1. A memory device comprising:
a substrate;
a first bit line disposed on the substrate;
a first memory cell disposed on the first bit line;
a first selector layer configured to selectively provide electric power to the first memory cell;
a second bit line disposed on the substrate;
a second memory cell disposed on the second bit line;
a second selector layer configured to selectively provide electric power to the second memory cell;
a dielectric layer disposed on the substrate and in which the first bit line, the second bit line, the first memory cell, the second memory cell, the first selector layer, and the second selector layer are embedded; and
a word line disposed on the dielectric layer and configured to control current flow through the first selector layer and the second selector layer,
wherein the first selector layer and the second selector layer are discrete elements embedded in the dielectric layer, each of the first selector layer and the second selector layer comprising a channel layer comprising amorphous silicon or a semiconducting oxide, and a high-k dielectric layer disposed between the channel layer and the word line.
2. The memory device of claim 1 , wherein the first memory cell comprises:
a top electrode contacting a drain electrode of the first selector layer;
a bottom contacting the first bit line; and
a data storage layer disposed between the top electrode and the bottom electrode.
3. The memory device of claim 2 , further comprising:
a source electrode and a drain electrode disposed under each channel layer.
4. The memory device of claim 1 , wherein the first memory cell and the second memory cell are not electrically connected to control elements formed in the substrate.
5. The memory device of claim 1 , wherein:
the substrate is a semiconductor substrate including complementary metal-oxide-semiconductor transistors; and
the first memory cell, the second memory cell, the first selector layer, and the second selector layer are formed on lower interconnect-level structures formed on the substrate.
6. The memory device of claim 1 , wherein the first memory cell and the second memory cell each comprise a magnetoresistive random-access memory (MRAM) cell, a resistive random-access memory (RRAM) cell, a ferroelectric random-access memory (FeRAM) cell, or a phase-change random-access memory (PCRAM) cell.
7. The memory device of claim 1 , wherein the dielectric layer comprises a first dielectric layer disposed on the substrate, surrounding the first bit line, the second bit line, the first memory cell, and the second memory cell.
8. The memory device of claim 7 , wherein the dielectric layer comprises a second dielectric layer disposed on the first dielectric layer, surrounding the first selector layer and the second selector layer.
9. A memory device comprising:
bit lines;
memory cells disposed on the bit lines;
drain lines disposed on the memory cells;
selector layers disposed on the drain lines and configured to selectively provide electric power to corresponding memory cells;
a dielectric layer surrounding the bit lines, the memory cells, and the selector layers; and
a word line disposed on the dielectric layer and configured to control current flow through the selector layers,
wherein the selector layers are discrete elements embedded in the dielectric layer, each of the selector layers comprising a channel layer comprising amorphous silicon or a semiconducting oxide, and a high-k dielectric layer disposed between the channel layer and the word line.
10. The memory device of claim 9 , wherein each memory cell comprises:
a top electrode;
a bottom electrode; and
a data storage layer disposed between the top electrode and the bottom electrode.
11. The memory device of claim 9 , further comprising:
a source electrode and a drain electrode disposed under each the channel layer.
12. The memory device of claim 9 , further comprising:
a substrate; and
lower interconnect-level structures disposed on the substrate and under the bit lines and the dielectric layer.
13. The memory device of claim 12 , wherein the memory cells are not electrically connected to control elements formed in the substrate.
14. The memory device of claim 12 , wherein the substrate is a semiconductor substrate including complementary metal-oxide-semiconductor transistors.
15. The memory device of claim 9 , wherein the memory cells comprise a magnetoresistive random-access memory (MRAM) cell, a resistive random-access memory (RRAM) cell, a ferroelectric random-access memory (FeRAM) cell, or a phase-change random-access memory (PCRAM) cell.
16. A memory device comprising:
bit lines;
memory cells electrically connected to the bit lines;
a first dielectric layer surrounding the bit lines and the memory cells;
selector layers that are each configured to selectively provide electric power to a corresponding memory cell;
a second dielectric layer surrounding the selector layers; and
a word line disposed on the second dielectric layer and configured to control current flow through the selector layers,
wherein the selector layers are discrete elements embedded in the second dielectric layer, each of the selector layers comprising a channel layer comprising amorphous silicon or a semiconducting oxide, and a high-k dielectric layer disposed between the channel layer and the word line.
17. The memory device of claim 16 , wherein each memory cell comprises a magnetoresistive random-access memory (MRAM) cell, a resistive random-access memory (RRAM) cell, a ferroelectric random-access memory (FeRAM) cell, or a phase-change random-access memory (PCRAM cell).
18. The memory device of claim 16 , wherein each memory cell comprises:
a top electrode;
a bottom electrode; and
a data storage layer disposed between the top electrode and the bottom electrode.
19. The memory device of claim 16 , further comprising:
a source electrode and a drain electrode disposed under each channel layer.
20. The memory device of claim 16 , further comprising:
a substrate; and
lower interconnect-level structures disposed on the substrate and under the bit lines and the first dielectric layer,
wherein the memory cells are not electrically connected to control elements formed in the substrate.