Cross-wafer RDLs in constructed wafers
A method includes placing a plurality of package components over a carrier, encapsulating the plurality of package components in an encapsulant, forming a light-sensitive dielectric layer over the plurality of package components and the encapsulant, exposing the light-sensitive dielectric layer using a lithography mask, and developing the light-sensitive dielectric layer to form a plurality of openings. Conductive features of the plurality of package components are exposed through the plurality of openings. The method further includes forming redistribution lines extending into the openings. One of the redistribution lines has a length greater than about 26 mm. The redistribution lines, the plurality of package components, the encapsulant in combination form a reconstructed wafer.
1. A structure comprising:
a reconstructed wafer comprising:
a plurality of device dies allocated as a plurality of groups, wherein the plurality of groups are identical to each other, and wherein the plurality of groups comprise a first device die group and a second device die group;
an encapsulant encapsulating the plurality of device dies therein; and
a plurality of redistribution lines over and electrically inter-coupling the first device die group and the second device die group, wherein the first device die group is closer to a first corner of the reconstructed wafer than all other groups in the plurality of groups, and the second device die group is closer to a second corner of the reconstructed wafer than all other groups in the plurality of groups; and
a thermal module attached to the reconstructed wafer.
2. The structure of claim 1 , wherein the plurality of redistribution lines comprise a cross-wafer redistribution line, with the cross-wafer redistribution line interconnecting the first device die group and the second device die group.
3. The structure of claim 2 , wherein the cross-wafer redistribution line comprises:
a first terminal overlapping a first die in the first device die group; and
a second terminal overlapping a second die in the second device die group, wherein the first terminal and the second terminal are at opposite ends of the reconstructed wafer.
4. The structure of claim 1 further comprising a package substrate joined to the reconstructed wafer.
5. The structure of claim 4 further comprising a package component over and joined to the package substrate, wherein the package component is selected from the group consisting of a package, a voltage regulator module, a power supply module, a passivation device die, and an IO connector.
6. The structure of claim 1 , wherein the reconstructed wafer has a rectangular top-view shape, and wherein the first device die group and the second device die group are at opposite corners of the reconstructed wafer.
7. The structure of claim 1 , wherein the reconstructed wafer has a round top-view shape, and wherein the first device die group and the second device die group are at opposite ends of a diameter of the reconstructed wafer.
8. The structure of claim 1 further comprising a bolt penetrating through the reconstructed wafer.
9. The structure of claim 8 , wherein the bolt secures the thermal module to the reconstructed wafer.
10. The structure of claim 1 , wherein each of the plurality of groups comprises multiple dies having different structures.
11. A structure comprising:
a reconstructed wafer comprising:
a plurality of device dies;
an encapsulant encapsulating the plurality of device dies, wherein in a top view of the reconstructed wafer, the encapsulant comprises a curved edge comprising a first portion and a second portion on opposite sides of the plurality of device dies, and wherein the first portion and the second portion are adjacent to a first end and a second end, respectively, of a diameter of the reconstructed wafer; and
a cross-wafer redistribution line electrically interconnecting a first device die to a second device die in the plurality of device dies, wherein the first device die is closer to the first portion of the curved edge than all other device dies in the plurality of device dies, and the second device die is closer to the second portion of the curved edge than all other device dies in the plurality of device dies;
a bolt penetrating through the reconstructed wafer; and
a screw attached to the bolt.
12. The structure of claim 11 further comprising a thermal module attached to the reconstructed wafer.
13. The structure of claim 11 further comprising a package substrate joined to and electrically connected to the reconstructed wafer.
14. The structure of claim 11 , wherein the cross-wafer redistribution line comprises a plurality of redistribution lines and a plurality of vias interconnecting neighboring ones of the plurality of redistribution lines.
15. The structure of claim 11 , wherein the plurality of device dies comprise a plurality of groups identical to each other, and wherein device dies in each of the plurality of groups are different from each other.
16. The structure of claim 15 , wherein each of the plurality of device die groups comprises a logic die and an additional die selected from a memory die, a passive die, and an input-output die.
17. The structure of claim 15 , wherein the plurality of device die groups comprise a first group and a second group, wherein the first group is closer to the first end of the diameter than all other groups of the plurality of device die groups, and the second group is closer to the second end of the diameter than all other groups of the plurality of device die groups, and the cross-wafer redistribution line connects the first group to the second group.
18. A structure comprising:
a reconstructed wafer comprising:
a plurality of device dies;
a molding compound encapsulating the plurality of device dies; and
a plurality of redistribution layers over and electrically coupling to the plurality of device dies, wherein the plurality of redistribution layers comprise a plurality of cross-wafer redistribution lines, each interconnecting a pair of the plurality of device dies;
a thermal module attached to the reconstructed wafer, and
a package component bonding to the reconstructed wafer, wherein the thermal module and the package component are on opposite sides of the reconstructed wafer.
19. The structure of claim 18 , wherein the package component comprises a package substrate, and the structure further comprises a die joining to the package substrate.
20. The structure of claim 19 , wherein the die and the reconstructed wafer are on a same side of the package substrate.