Lithium-containing chalcophosphates for thermal neutron detection
Inorganic compounds having the formula LiMP 2 Q 6 , where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, are provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope ( 6 Li) to enhance their neutron detecting capabilities.
1. A lithium-containing chalcophosphate compound having the formula LiMP 2 Q 6 , where M is Ga, In, Bi, Sb, As, or a combination thereof, and Q is S, Se, or a combination thereof.
2. The compound of claim 1 , wherein the Li comprises 6 Li.
3. The compound of claim 1 , wherein the compound is a quaternary compound.
4. The compound of claim 3 , wherein the compound is doped with an external dopant.
5. The compound of claim 4 , wherein the external dopant concentration in the doped compound is in the range from 0.001 mol. % to 1 mol. %.
6. The compound of claim 4 , wherein the external dopant is selected from Cd, Hg, Pb, Sn, and combinations of two or more thereof.
7. The compound of claim 3 having the formula LiInP 2 Se 6 .
8. The compound of claim 7 , wherein the Li comprises 6 Li.
9. The compound of claim 7 , wherein the compound is in the form of a single-crystal having a length of at least 0.5 cm.
10. The compound of claim 7 , wherein the LiInP 2 Se 6 is doped with an external dopant.
11. The compound of claim 10 , wherein the external dopant is Cd.
12. The compound of claim 11 , wherein the external dopant concentration in the doped compound is in the range from 0.001 mol. % to 1 mol. %.
13. The compound of claim 1 , wherein the compound is in the form of a single-crystal having a length of at least 0.5 cm.
14. The compound of claim 1 , where M is Ga, In, or As, or a combination thereof.
15. A method of making a single-crystal of an inorganic compound having the formula LiMP 2 Q 6 , where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S, Se, Te, or a combination thereof, the method comprising growing the single-crystal via chemical vapor transport growth in the presence of an iodine transport agent.
16. The method of claim 15 , where M is Ga, In, or As, or a combination thereof.
17. A method of making a single-crystal of an inorganic compound having the formula LiMP 2 Q 6 , where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S, Se, or a combination thereof, the method comprising growing the single-crystal via the solidification of a melt containing each element of the compound.
18. The method of claim 17 , where M is Ga, In, or As, or a combination thereof.