Display device including shock absorbing layer
Provided is a display device including a substrate, a semiconductor layer on the substrate, an interlayer insulating layer on the semiconductor layer, a source electrode or a drain electrode on the interlayer insulating layer, and connected to the semiconductor layer, an organic light-emitting diode connected to the source electrode or the drain electrode, and a thin film encapsulation layer on the organic light-emitting diode, wherein, a neutral plane corresponding to an impact applied to the thin film encapsulation layer is inside or below the interlayer insulating layer.
1. A display device comprising:
a substrate;
a semiconductor layer on the substrate;
a first interlayer insulating layer on the semiconductor layer;
a second interlayer insulating layer on the first interlayer insulating layer;
a source electrode or a drain electrode on the second interlayer insulating layer, and connected to the semiconductor layer;
an organic light-emitting diode connected to the source electrode or the drain electrode; and
a thin film encapsulation layer on the organic light-emitting diode,
wherein, a neutral plane is inside or below the first interlayer insulating layer or the second interlayer insulating layer, such that a compressive force on one side of the neutral plane corresponding to an impact applied to the thin film encapsulation layer causes a tensile force on another side of the neutral plane.
2. The display device of claim 1 , wherein a distance from a bottom of the substrate to a bottom of the first interlayer insulating layer is greater than a distance from an upper surface of the second interlayer insulating layer to an upper surface of the thin film encapsulation layer.
3. The display device of claim 1 , wherein the thin film encapsulation layer comprises an organic encapsulation layer, and
wherein a thickness of the organic encapsulation layer is between about 0.16 times and about 0.26 times a distance from a bottom of the substrate to an upper surface of the thin film encapsulation layer.
4. The display device of claim 1 , wherein a thickness of the first interlayer insulating layer is greater than a thickness of the second interlayer insulating layer.
5. The display device of claim 1 , wherein the second interlayer insulating layer has a structure in which an inorganic material and an organic material are sequentially stacked.
6. The display device of claim 1 , wherein the first interlayer insulating layer comprises silicon oxide.
7. The display device of claim 1 , further comprising a shock absorbing layer on the second interlayer insulating layer.
8. The display device of claim 7 , wherein the shock absorbing layer comprises an organic material.
9. The display device of claim 1 , further comprising an input detection member on the thin film encapsulation layer.
10. A display device comprising:
a substrate;
a semiconductor layer on the substrate;
an interlayer insulating layer on the semiconductor layer;
a source electrode or a drain electrode on the interlayer insulating layer, and connected to the semiconductor layer;
an organic light-emitting diode connected to the source electrode or the drain electrode; and
a thin film encapsulation layer on the organic light-emitting diode,
wherein a thickness of the substrate is between about 0.5 times and about 0.76 times a distance from a lower surface of the substrate to an upper surface of the thin film encapsulation layer.
11. The display device of claim 10 , wherein the thin film encapsulation layer comprises an organic encapsulation layer, and
wherein a thickness of the organic encapsulation layer is between about 0.16 times and about 0.26 times a distance from a bottom of the substrate to the upper surface of the thin film encapsulation layer.
12. The display device of claim 10 , wherein the interlayer insulating layer comprises:
a first interlayer insulating layer; and
a second interlayer insulating layer on the first interlayer insulating layer.
13. The display device of claim 12 , wherein a thickness of the first interlayer insulating layer is greater than a thickness of the second interlayer insulating layer.
14. The display device of claim 12 , wherein the second interlayer insulating layer has a structure in which an inorganic material and an organic material are sequentially stacked.
15. The display device of claim 12 , wherein the first interlayer insulating layer comprises silicon oxide.
16. The display device of claim 10 , further comprising a shock absorbing layer on the interlayer insulating layer.
17. The display device of claim 16 , wherein the shock absorbing layer comprises an organic material.
18. The display device of claim 10 , further comprising an input detection member on the thin film encapsulation layer.
19. A display device comprising:
a substrate;
a semiconductor layer on the substrate;
a first interlayer insulating layer on the semiconductor layer;
a second interlayer insulating layer on the first interlayer insulating layer;
a source electrode or a drain electrode on the second interlayer insulating layer, and connected to the semiconductor layer;
an organic light-emitting diode connected to the source electrode or the drain electrode; and
a thin film encapsulation layer on the organic light-emitting diode,
wherein a compressive force generated in the first interlayer insulating layer or the second interlayer insulating layer corresponding to an impact applied to the thin film encapsulation layer causes a tensile force away from the thin film encapsulation layer.
20. The display device of claim 19 , wherein the second interlayer insulating layer has a structure in which an inorganic material and an organic material are sequentially stacked.