Method for forming insulation film
A method of forming an insulation film on a substrate, includes: reacting, as a film-forming gas, an oxygen-containing silicon compound gas represented by formula below with a non-oxidizing hydrogen-containing gas in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized, to form a film of a flowable silanol compound on the substrate; and subsequently, annealing the substrate to turn the flowable silanol compound into the insulation film. Si α O β (O—C m H n ) Γ C x H y (where m, n, and a are arbitrary integers of 1 or more, β, Γ, x, and y are arbitrary integers of 0 or more, and β and Γ are not 0 at a same time).
1. A method of forming an insulation film on a substrate, the method comprising:
forming a film of a flowable silanol compound that does not contain H 2 O on the substrate by reacting, as a film-forming gas, an oxygen-containing silicon compound gas represented by formula (1) below with a non-oxidizing hydrogen-containing gas in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized; and
subsequently, annealing the substrate to turn the flowable silanol compound into the insulation film,
Si α O β (O—C m H n ) Γ C x H y (1)
where m, n, and a are arbitrary integers of 1 or more, β, Γ, x, and y are arbitrary integers of 0 or more, and β and Γ are not 0 at a same time,
wherein the annealing is performed in a non-oxidizing atmosphere.
2. The method of claim 1 , wherein the oxygen-containing silicon compound gas is an alkoxysilane-based compound gas.
3. The method of claim 2 , wherein the alkoxysilane-based compound gas is at least one selected from tetramethoxysilane, methyltrimethoxysilane, tetraethoxysilane, dimethyldimethoxysilane, triethoxysilane, trimethoxysilane, and trimethoxy disiloxane.
4. The method of claim 3 , wherein, as the film-forming gas, a first additive gas, which is a compound having a Si—C m H n bond, is added.
5. The method of claim 4 , wherein, as the film-forming gas, a second additive gas, which is a silicon compound having a structural formula represented by Si s N t C u H v (where s and v are arbitrary integers of 1 or more, and t and u are arbitrary integers of 0 or more) is added.
6. The method of claim 5 , wherein the non-oxidizing hydrogen-containing gas is at least one selected from a H 2 gas, a NH 3 gas, and a SiH 4 gas.
7. The method of claim 6 , wherein the forming the film of the flowable silanol compound is performed at a substrate temperature of 250 degrees C. or lower.
8. The method of claim 7 , wherein the forming the film of the flowable silanol compound is performed at a substrate temperature of −10 to 100 degrees C.
9. The method of claim 1 , wherein the annealing is performed at a temperature higher than a temperature when forming the film, which is in a range of 80 degrees C. to 850 degrees C.
10. The method of claim 1 , wherein, as the film-forming gas, a first additive gas, which is a compound having a Si—C m H n bond, is added.
11. The method of claim 1 , wherein, as the film-forming gas, a second additive gas, which is a silicon compound having a structural formula represented by Si s N t C u H v (where s and v are arbitrary integers of 1 or more, and t and u are arbitrary integers of 0 or more) is added.