Method of forming testing module and method for using the same

1. A method, comprising:

forming an integrated circuit and a testing pattern over a die region of a wafer and a scribe line region of the wafer, respectively, wherein the integrated circuit and the testing pattern are formed by a same fabrication process;

connecting a via of a testing chip to a testing pad of the testing pattern;

performing a testing process to the die region by detecting electrical properties of the testing pattern through the testing chip;

after the testing process is completed, forming an interconnection structure over the integrated circuit, wherein the interconnection structure comprises conductive features electrically connected to the integrated circuit; and

after the interconnection structure is formed over the integrated circuit performing an singulation process through the scribe line region of the wafer, such that the die region of the wafer is singulated into an individual die.

2. The method of claim 1 , further comprising performing an alignment process such that the testing chip covers an entirety of the die region of the wafer.

3. The method of claim 1 , wherein the via of the testing chip is electrically connected to the testing pad of the testing pattern through a conductive pad in contact with a bottom surface of the testing chip.

4. The method of claim 1 , further comprising performing a cleaning process by removing contaminations from the via of the testing chip after the testing process is completed.

5. The method of claim 1 , wherein the testing chip comprises a semiconductor substrate, and the via of the testing chip extends through the semiconductor substrate and protrudes from a bottom surface of the semiconductor substrate.

6. The method of claim 5 , wherein a top surface of the via is higher than a top surface of the semiconductor substrate.

7. The method of claim 5 , wherein the testing chip further comprises a transistor over the semiconductor substrate, and the transistor is electrically connected to the via.

8. A method, comprising:

forming an integrated circuit and a testing pattern over a die region of a wafer and a scribe line region of the wafer, respectively, wherein the integrated circuit and the testing pattern are formed simultaneously;

moving a testing chip to a position above the die region and the scribe line region of the wafer, wherein the testing chip comprises:

a semiconductor substrate;

a first interconnection structure over the semiconductor substrate, wherein the first interconnection structure comprises first conductive features; and

a via extending through the semiconductor substrate and electrically connected to the first conductive features;

electrically connecting the via of the testing chip to a testing pad of the testing pattern;

performing a testing process to the die region by detecting electrical properties of the testing pattern through the testing chip; and

after the testing process is completed, performing an singulation process through the scribe line region of the wafer, such that the die region of the wafer is singulated into an individual die.

9. The method of claim 8 , further comprising forming a second interconnection structure over the integrated circuit after performing the testing process and prior to performing the singulation process.

10. The method of claim 8 , wherein the testing chip is moved by a gripper.

11. The method of claim 8 , further comprising performing a cleaning process to remove contaminations from a bottom surface of the semiconductor substrate of the testing chip and the via of the testing chip.

12. The method of claim 8 , wherein an area of the testing chip is greater than an area of the die region of the wafer and is smaller than twice the area of the die region.

13. The method of claim 8 , further comprising:

aligning the via of the testing chip with the testing pad of the testing pattern; and

moving down the testing chip such that the via of the testing chip is in contact with the testing pad of the testing pattern.

14. The method of claim 13 , wherein during performing the testing process, the testing chip covers an entirety of the die region.

15. A method, comprising:

picking up a testing chip by a gripper, wherein the testing chip comprises a semiconductor substrate and first and second vias protruding from a bottom surface of the semiconductor substrate;

moving the testing chip to a position over a wafer, the wafer comprising a first die region, a second die region, a scribe line region between the first die region and the second die region, and a first testing pad and a second testing pad in the scribe line region, wherein the first testing pad is associated with a first semiconductor device in the first die region, and the second testing pad is associated with a second semiconductor device in the second die region;

moving down the testing chip, such that the first via of the testing chip is electrically connected to the first testing pad, and a second via of the testing chip is electrically connected to the second testing pad;

performing a testing process to the first and second die regions through the testing chip; and

after the testing process is completed, performing a singulation process through the scribe line region of the wafer.

16. The method of claim 15 , wherein the testing chip further comprises a guard ring structure laterally between the first and second vias, and a bottom surface of the guard ring structure is higher than bottom surfaces of the first and second vias.

17. The method of claim 15 , further comprising forming an interconnection structure over the wafer after the testing process is completed and prior to performing the singulation process.

18. The method of claim 15 , further comprising performing an alignment process such that the testing chip covers the first and second die regions.

19. The method of claim 15 , wherein the testing chip further comprises a first transistor and a second transistor over the semiconductor substrate.

20. The method of claim 19 , wherein the first transistor is electrically connected to the first via, and the second transistor is electrically connected to the second via, and wherein during testing the first die region, the second transistor is turned off, while during testing the second die region, the first transistor is turned off.