Granted Patent B2

US 12,249,493 · App. 18/172,563 · Granted Mar 11, 2025

Inventors: Sheng-Chun Yang (Tainan, TW); Yi-Ming Lin (Tainan, TW); Po-Wei Liang (Yilan County, TW); Chu-Han Hsieh (Tainan, TW); Chih-Lung Cheng (Miaoli County, TW); Po-Chih Huang (Tainan, TW)

Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

H01J37/32724C23C16/45565C23C16/45576C23C16/466C23C16/505H01L21/67109H01L21/6838H01J2237/002H01J2237/3321H01J2237/3323H01J2237/334H01L21/67028H01L21/67069

Abstract

Claims (37)

1. A method, comprising:

loading a wafer over a wafer chuck in a process chamber;

performing a deposition process on the loaded wafer;

supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; and

guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure, wherein the second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels from a top view.

2. The method of claim 1 , wherein the second one of the arc-shaped channels is located closer to a center of the wafer chuck than the first one of the arc-shaped channels.

3. The method of claim 1 , wherein the first one of the arc-shaped channels has a greater arc angle than the second one of the arc-shaped channels.

4. The method of claim 1 , wherein the first and second ones of the arc-shape channels have arc angles greater than about 180 degrees relative to a center of the wafer chuck.

5. The method of claim 1 , wherein the fluid medium flows through the first and second ones of the arc-shaped channels in opposite circumferential directions around a center of the wafer chuck.

6. The method of claim 1 , wherein the fluid guiding structure further comprises a linear connection channel connecting the second one of the arc-shaped channels to the first one of the arc-shaped channels.

7. The method of claim 1 , wherein the fluid medium flows through the first and second ones of the arc-shaped channels in a same circumferential direction around a center of the wafer chuck.

8. The method of claim 1 , wherein the fluid guiding structure has a third one of the arc-shaped channels between the first and second ones of the arc-shaped channels and concentric with the first and second ones of the arc-shaped channels from the top view.

9. The method of claim 8 , wherein the fluid medium flows through the first and third ones of the arc-shaped channels in opposite circumferential directions around a center of the wafer chuck.

10. The method of claim 1 , further comprising:

guiding a gaseous material from a gas inlet port on a bottom surface of the wafer chuck to an inner annular groove on a top surface of the wafer chuck; and

supplying the gaseous material between the wafer and the wafer chuck from the inner annular groove.

11. A method, comprising:

holding a wafer over a wafer chuck in a process chamber;

supplying a fluid medium to a fluid inlet port on the wafer chuck,

guiding the fluid medium from the fluid inlet port to a first arc-shaped cooling channel disposed in the wafer chuck;

after guiding the fluid medium from the fluid inlet port to the first arc-shaped cooling channel, guiding the fluid medium from the first arc-shaped cooling channel to a second arc-shaped cooling channel disposed in the wafer chuck, the fluid medium flowing in a first circumferential direction in the first arc-shaped cooling channel and in a second circumferential direction opposite to the first circumferential direction in the second arc-shaped cooling channel; and

generating plasma in the process chamber.

12. The method of claim 11 , wherein the first arc-shaped cooling channel surrounds the fluid inlet port from a top view.

13. The method of claim 11 , wherein the second arc-shaped cooling channel surrounds the fluid inlet port from a top view.

14. The method of claim 11 , further comprising:

discharging the fluid medium through a fluid outlet port on the wafer chuck, wherein the first arc-shaped cooling channel surrounds the fluid outlet port from a top view.

15. The method of claim 11 , wherein the first arc-shaped cooling channel has a different arc angle than the second arc-shaped cooling channel.

16. The method of claim 11 , further comprising:

after guiding the fluid medium from the first arc-shaped cooling channel to the second arc-shaped cooling channel, guiding the fluid medium from the second arc-shaped cooling channel to a third arc-shaped cooling channel disposed in the wafer chuck.

17. A method, comprising:

depositing a film on a wafer over a wafer chuck in a process chamber;

supplying a fluid medium to a first arc-shaped cooling channel disposed in the wafer chuck; and

guiding the fluid medium from the first arc-shaped cooling channel to a second arc-shaped cooling channel disposed in the wafer chuck, the second arc-shaped cooling channel being closer to a center of the wafer chuck than the first arc-shaped cooling channel from a top view.

18. The method of claim 17 , wherein guiding the fluid medium from the first arc-shaped cooling channel to the second arc-shaped cooling channel is performed through a first linear connection channel connecting between the first and second arc-shaped cooling channels.

19. The method of claim 18 , further comprising:

guiding the fluid medium from the second arc-shaped cooling channel to a third arc-shaped cooling channel disposed in the wafer chuck.

20. The method of claim 19 , wherein guiding the fluid medium from the second arc-shaped cooling channel to the third arc-shaped cooling channel is performed through a second linear connection channel connecting between the first and second arc-shaped cooling channels, the second linear connection channel having a shorter length than the first linear connection channel.

Assignments (1)

Continuity (2)

References Cited (18)