Transfer structure and manufacturing method thereof, transfer device and manufacturing method thereof
Provided in the embodiments are a transfer structure and a method thereof, and a transfer device and a manufacturing method thereof. The transfer structure includes: a first electrode, a piezoelectric layer, a second electrode and an adhesive layer stacked on a substrate in sequence, wherein the first electrode and the second electrode are insulated from each other. The transfer structure further includes: a position-limiting layer, wherein the position-limiting layer includes a cavity; the piezoelectric layer and at least part of the adhesive layer are located in the cavity of the position-limiting layer; and in the direction perpendicular to the substrate, the distance between the surface, away from the substrate, of the position-limiting layer and the substrate is greater than the distance between the surface, away from the substrate, of the adhesive layer and the substrate.
1. A transfer structure, comprising: a first electrode, a piezoelectric layer, a second electrode and an adhesion layer which are sequentially stacked on a substrate; the first electrode and the second electrode being insulated from each other;
the transfer structure further comprises a position-limiting layer, and the position-limiting layer comprises a cavity;
wherein the piezoelectric layer and at least part of the adhesion layer are in the cavity of the position-limiting layer; and in a direction perpendicular to the substrate, a distance between a surface of the position-limiting layer away from the substrate and the substrate is greater than a distance between a surface of the adhesion layer away from the substrate and the substrate, and at least part of the at least part of the adhesion layer located in the cavity is further away from the first electrode than the piezoelectric layer.
2. The transfer structure according to claim 1 , wherein, the transfer structure further comprises a protruding structure on a sidewall of the cavity of the position-limiting layer.
3. The transfer structure according to claim 2 , wherein in a direction perpendicular to the substrate, the protruding structure is located on a side of the adhesion layer away from the substrate.
4. The transfer structure according to claim 3 , wherein, in the direction perpendicular to the substrate, a surface of the protruding structure away from the substrate and the surface of the position-limiting layer away from the substrate are in a same plane.
5. The transfer structure according to claim 2 , wherein the position-limiting layer and the protruding structure are integrally formed.
6. The transfer structure according to claim 1 , wherein, in the direction perpendicular to the substrate, the cavity has an opening facing at least a side away from the substrate.
7. The transfer structure according to claim 1 , wherein the transfer structure further comprises a protective layer between the second electrode and the adhesion layer.
8. The transfer structure according to claim 1 , wherein the transfer structure further comprises an elastic layer on a side of the first electrode away from the piezoelectric layer.
9. A transfer device, comprising a substrate and a plurality of transfer structures on the substrate according to claim 1 .
10. The transfer device according to claim 9 , wherein the substrate comprises a first substrate, a plurality of gate lines and a plurality of data lines which are on the first substrate, the plurality of gate lines extend in a first direction and are sequentially arranged in a second direction, and the plurality of data lines extend in the second direction and are sequentially arranged in the first direction;
the substrate further comprises a plurality of thin film transistors on the first substrate; gate electrodes of the plurality of thin film transistors in a same row and arranged in the first direction are electrically connected to a same gate line; and source electrodes of the plurality of thin film transistors in a same column and arranged in the second direction are electrically connected to a same data line;
one first electrode in one transfer structure is electrically connected to one drain electrode of the thin film transistor.
11. A manufacturing method of a transfer structure, comprising:
forming a position-limiting layer on a second substrate, wherein the position-limiting layer comprises a cavity;
forming a first sacrificial layer in the cavity of the position-limiting layer;
forming an adhesion layer at least in the cavity of the position-limiting layer;
forming a second electrode and a piezoelectric layer on the adhesion layer sequentially, wherein the piezoelectric layer is in the cavity of the position-limiting layer;
forming a first electrode on the piezoelectric layer; and
removing the first sacrificial layer and the second substrate, wherein at least part of the adhesion layer located in the cavity is further away from the first electrode than the piezoelectric layer.
12. The manufacturing method according to claim 11 , wherein in a direction perpendicular to the second substrate, the cavity has an opening facing at least the second substrate.
13. The manufacturing method according to claim 11 , wherein forming the position-limiting layer on the second substrate comprises:
forming a position-limiting layer film on the second substrate;
patterning the position-limiting layer film to form the position-limiting layer on the second substrate, and simultaneously forming a protruding structure on a sidewall of the cavity of the position-limiting layer.
14. The manufacturing method according to claim 11 , further comprising: before forming the second electrode and the piezoelectric layer on the adhesion layer sequentially, forming a protective layer on the adhesion layer.
15. The manufacturing method according to claim 11 , further comprising: after forming the first electrode on the piezoelectric layer, forming an elastic layer on the first electrode.
16. A manufacturing method of a transfer device, comprising:
forming a first electrode, a piezoelectric layer and a second electrode which are stacked on a substrate sequentially;
forming an adhesion layer on the second electrode, and forming a position-limiting layer on the substrate; the position-limiting layer comprising a cavity; wherein the piezoelectric layer and at least part of the adhesion layer are in the cavity of the position-limiting layer; a distance between a surface of the position-limiting layer away from the substrate and the substrate is greater than a distance between a surface of the adhesion layer away from the substrate and the substrate, wherein at least part of the adhesion layer located in the cavity is further away from the first electrode than the piezoelectric layer.