Semiconductor device and method for fabricating the same
A semiconductor device includes a dielectric layer, a conductive layer formed over the dielectric layer, and a reduction sacrificial layer formed between the dielectric layer and the conductive layer, wherein the reduction sacrificial layer includes a first reduction sacrificial material having higher electronegativity than the dielectric layer, and a second reduction sacrificial material having higher electronegativity than the first reduction sacrificial material.
1. A capacitor comprising:
a bottom electrode;
a first niobium oxide layer on the bottom electrode;
a first titanium oxide layer on the first niobium oxide layer;
a dielectric layer over the first titanium oxide layer;
a top electrode over the dielectric layer;
a second titanium oxide layer disposed between the dielectric layer and the top electrode; and
a second niobium oxide layer disposed between the second titanium oxide layer and the top electrode,
wherein the second niobium oxide layer has a larger vertical thickness than the second titanium oxide layer.
2. The capacitor of claim 1 , wherein the dielectric layer includes a zirconium oxide-based layer or a hafnium oxide-based layer.
3. The capacitor of claim 1 , wherein the dielectric layer includes ZA (ZrO 2 /Al 2 O 3 ), ZAZ (ZrO 2 /Al 2 O 3 /ZrO 2 ), HA (HfO 2 /Al 2 O 3 ), HAH (HfO 2 /Al 2 O 3 /HfO 2 ), —ZAZA—(ZrO 2 /Al 2 O 3 /ZrO 2 /Al 2 O 3 ), —ZAZAZ (ZrO 2 /Al 2 O 3 /ZrO 2 /Al 2 O 3 /ZrO 2 ), HAHA (HfO 2 /Al 2 O 3 /HfO 2 /Al 2 O 3 ) or HAHAH (HfO 2 /Al 2 O 3 /HfO 2 /Al 2 O 3 /HfO 2 ).
4. The capacitor of claim 1 , wherein the top electrode includes a SiGe/TiN stack.
5. The capacitor of claim 1 , wherein the top electrode includes a metal, a metal nitride, a metal carbide, a conductive metal nitride or combinations thereof.
6. The capacitor of claim 1 , wherein the top electrode includes titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), titanium carbon nitride (TiCN), tantalum carbon nitride (TaCN), tungsten (W), tungsten nitride (WN), ruthenium (Ru), iridium (Ir), ruthenium oxide (RuO 2 ), iridium oxide (IrO 2 ) or combinations thereof.
7. The capacitor of claim 1 , wherein the dielectric layer includes hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), tantalum oxide (Ta 2 O 5 ), niobium oxide (Nb 2 O 5 ) or strontium titanium oxide (SrTiO 3 ).
8. The capacitor of claim 1 , wherein the bottom electrode includes a metal, a metal nitride, a conductive metal oxide or combinations thereof.