IP Library › Granted Patent US 12,252,275
Granted Patent B2
US 12,252,275 · App. 18/489,551 · Granted Mar 18, 2025

Reactors for plasma assisted treatment of powder

Inventor: Vladimir Gorokhovsky (Lafayette, CO)
Assignee: Nano-Product Engineering, LLC
B64G1/405B64G1/413F03H1/0037F03H1/0043H05H1/50
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Quick Facts
Patent No.
US 12,252,275
App. No.
18/489,551
Granted
Mar 18, 2025
Kind
B2
Abstract

An apparatus generates energetic particles and generates a plasma of a vaporized solid material and gaseous precursors for the application of coatings to surfaces of a substrate by way of condensation of plasma and for electric propulsion applications.

Claims (58)

1. A reactor configured for plasma assisted treatment of a powder, comprising:

a plasma duct configured to contain a high pressure, high potential, plasma; a cathode chamber coupled to a proximal end of the plasma duct;

a remote arc discharge generation system configured to generate a flow of electrons through the plasma duct in a direction from the proximal end of the plasma duct toward a distal end of the plasma duct, the remote arc discharge generation system including (a) a cathodic arc source, positioned in the cathode chamber, configured to generate the electrons of the flow of electrons and (b) a distal anode, positioned in the plasma duct or past the distal end, configured to cause the flow of electrons;

a gas inlet coupled to the distal end for receiving a plasma-generating gas;

a gas outlet, coupled to the proximal end configured to remove at least a portion of the plasma-generating gas to generate a flow of an ionized gas through the plasma duct in direction from the distal end toward the proximal end, so as to generate ions from collisions between the electrons and the plasma-generating gas;

a separating baffle, positioned between the proximal end and the cathode chamber, for restricting a flow of the ionized gas out of the plasma duct to at least one orifice of the separating baffle and maintain (a) a high pressure and a high plasma potential in the plasma duct to generate a high density, high voltage remote arc plasma, (b) a low pressure and a low plasma potential in the cathode chamber favorable for generation of the electrons, (c) the high plasma potential in the plasma duct to increase energies of the ions, and (d) the low plasma potential in the cathode chamber to generate a plasma plume from an overlapping counter-propagating flow of the electrons and the plasma-generating gas through the at least one orifice, each orifice of the at least one orifice having a transverse extent in a range from 0.1 mm to 5 cm to maintain a stationary shock-wave front across the at least one orifice, the stationary shock-wave front separating the high pressure and the high plasma potential in the plasma duct from the low pressure and the low plasma potential in the cathode; and

a powder injector configured to inject the powder into the plasma duct for plasma treatment and surface modification of the powder;

wherein each orifice of the at least one orifice is a straight nozzle-opening, a converging nozzle, or a converging-diverging de Laval supersonic nozzle for generating a supersonic plasma plume within the cathode chamber, (f) the cathode chamber is connected to a vacuum pumping system to maintain the low pressure in the cathode chamber, (g) the plasma duct is oriented vertically, the powder to be treated is suspended within a flow of the plasma-generating gas, and (h) at least a portion of a reactive gas is recirculating.

2. The reactor of claim 1 comprising at least one gas inlet coupled to the distal end and configured for tangential gas injection configured to create a circumferential gas flow to generate a vortex flow within the plasma duct to stabilize an arc discharge in the plasma duct and contain the powder near an axis of the plasma duct.

3. The reactor of claim 2 where the at least one gas inlet for injection of the tangential gas flow is coupled to the proximal end of the plasma duct.

4. The reactor of claim 1 where the powder injector is positioned near the proximal end of the plasma duct.

5. The reactor of claim 1 where the powder injector is positioned near the distal end of the plasma duct.

6. The reactor of claim 1 where the distal end of the plasma duct is frustoconical.

7. The reactor of claim 1 where a powder collector is positioned by the distal end of the plasma duct.

8. The reactor of claim 1 where the plasma duct is made of dielectric material.

9. The reactor of claim 1 wherein the plasma treatment and surface modification of the powder includes chemical vapor deposition.

10. The reactor of claim 1 where a longitudinal magnetic field is generated along the plasma duct by magnetic coils positioned coaxial to the plasma duct.

11. The reactor of claim 1 where the plasma generator is attached to the at least one gas inlet for injecting a plasma jet into the reactive gas in the plasma duct.

12. The reactor of claim 1 where the plasma in the plasma duct is generated by RF induction excitation.

13. The reactor of claim 1 wherein the plasma treatment and surface modification of the powder includes atomic layer etching or atomic layer deposition.

14. The reactor of claim 1 where the cathode chamber is attached to a top end of the plasma duct, and the anode is positioned at a bottom end of the plasma duct in front of a powder collector.

15. A reactor configured for plasma assisted treatment of a powder, comprising:

a plasma duct configured to contain a high pressure, high potential, plasma;

a cathode chamber coupled to a proximal end of the plasma duct;

a remote arc discharge generation system configured to generate a flow of electrons through the plasma duct in a direction from the proximal end of the plasma duct toward a distal end of the plasma duct, the remote arc discharge generation system including (a) A cathodic arc source, positioned in the cathode chamber, configured to generate the electrons of the flow of electrons and (b) A distal anode, positioned in the plasma duct or past the distal end, configured to cause the flow of electrons;

a gas inlet coupled to the distal end for receiving a plasma-generating gas;

a gas outlet, coupled to the proximal end configured to remove at least a portion of the plasma-generating gas to generate a flow of an ionized gas through the plasma duct in direction from the distal end toward the proximal end, so as to generate ions from collisions between the electrons and the plasma-generating gas;

a separating baffle, positioned between the proximal end and the cathode chamber, for restricting a flow of the ionized gas out of the plasma duct to at least one orifice of the separating baffle and maintain (a) A high pressure and a high plasma potential in the plasma duct to generate a high density, high voltage remote arc plasma, (b) A low pressure and a low plasma potential in the cathode chamber favorable for generation of the electrons, (c) the high plasma potential in the plasma duct to increase energies of the ions, and (d) the low plasma potential in the cathode chamber to generate a plasma plume from overlapping counter propagating flows of the electrons and the plasma-generating gas through the at least one orifice, each orifice of the at least one orifice having a transverse extent in a range from 0.1 mm to 5 cm to maintain a stationary shock-wave front across the at least one orifice, the stationary shock-wave front separating the high pressure and the high plasma potential in the plasma duct from the low pressure and the low plasma potential in the cathode; and

a powder injector configured to inject the powder into the plasma duct for plasma treatment and surface modification of the powder;

wherein (e) each orifice of the at least one orifice is a straight nozzle-opening, a converging nozzle, or a converging-diverging de Laval supersonic nozzle for generating a supersonic plasma plume within the cathode chamber, (f) the cathode chamber is connected to a vacuum pumping system to maintain the low pressure in the cathode chamber, (g) the plasma duct is oriented vertically, and the powder to be treated is suspended within a flow of the plasma-generating gas, and (h) A chain of the plasma ducts are attached to each other in parallel, each plasma duct of the chain of plasma ducts being provided with a respective cathode chamber, a respective remote anode, and a respective cathode.

16. A reactor configured for plasma assisted treatment of a powder, comprising:

a plasma duct configured to contain a high pressure, high potential, plasma;

a cathode chamber coupled to a proximal end of the plasma duct;

a remote arc discharge generation system configured to generate a flow of electrons through the plasma duct in a direction from the proximal end of the plasma duct toward a distal end of the plasma duct, the remote arc discharge generation system including (a) A cathodic arc source, positioned in the cathode chamber, configured to generate the electrons of the flow of electrons and (b) A distal anode, positioned in the plasma duct or past the distal end, configured to cause the flow of electrons;

a gas inlet coupled to the distal end for receiving a plasma-generating gas;

a gas outlet, coupled to the proximal end configured to remove at least a portion of the plasma-generating gas to generate a flow of an ionized gas through the plasma duct in a direction from the distal end toward the proximal end, so as to generate ions from collisions between the electrons and the plasma-generating gas;

a separating baffle, positioned between the proximal end and the cathode chamber, for restricting a flow of the ionized gas out of the plasma duct to at least one orifice of the separating baffle and maintain (a) A high pressure and a high plasma potential in the plasma duct to generate a high density, high voltage remote arc plasma, (b) A low pressure and a low plasma potential in the cathode chamber favorable for generation of the electrons, (c) the high plasma potential in the plasma duct to increase energies of the ions, and (d) the low plasma potential in the cathode chamber to generate a plasma plume from overlapping counter propagating flows of the electrons and the plasma-generating gas through the at least one orifice, each orifice of the at least one orifice having a transverse extent in a range from 0.1 mm to 5 cm to maintain a stationary shock-wave front across the at least one orifice, the stationary shock-wave front separating the high pressure and the high plasma potential in the plasma duct from the low pressure and the low plasma potential in the cathode; and

a powder injector configured to inject the powder into the plasma duct for plasma treatment and surface modification of the powder;

wherein (e) each orifice of the at least one orifice is a straight nozzle-opening, a converging nozzle, or a converging-diverging de Laval supersonic nozzle for generating a supersonic plasma plume within the cathode chamber, (f) the cathode chamber is connected to a vacuum pumping system to maintain low pressure in the cathode chamber, (g) the plasma duct is oriented vertically, the powder to be treated is suspended within a flow of the plasma generating gas, and (h) the cathode chamber is attached to the proximal end of the plasma duct coaxially to the plasma duct, and the powder is injected at the distal end of the plasma duct and falls through the plasma duct and the cathode chamber by gravity and collects in a powder collector attached to the proximal end of the cathode chamber.

17. The reactor of claim 16 where the cathode chamber is surrounded by a magnetic coil to generate a longitudinal magnetic field along the cathode chamber.

18. The reactor of claim 17 where the cathodic arc source comprises two cathodic arc sources attached to opposite sides of the cathode chamber and surrounded by focusing and deflecting magnetic coils.

19. The reactor of claim 18 where substrates-to-be-coated are positioned at a bottom of the powder collector, a substrate holder is connected to a negative pole of a bias power supply, wherein both metal vapor cathodic arc plasma flow and the powder flow coincide for deposition of a coating over said substrates-to-be-coated.

20. The reactor of claim 19 where at least one additional anode is positioned downstream of the cathode chamber in front of the powder collector.

21. The reactor of claim 20 where two magnets are positioned on both sides of the at least one additional anode to generate a perpendicular magnetic field across the at least one additional anode for isolation of the electrons from the substrates-to-be-coated in the powder collector.

22. The reactor of claim 21 where electrostatic grids are positioned between the at least one additional anode and the substrate holder for accelerating negatively charged particles of the powder toward the substrates-to-be-coated.

23. The reactor of claim 22 where the at least one orifice is positioned in a positively charged diaphragm between the at least one additional anode and the substrate holder for accelerating the negatively charged particles toward substrate-to-be-coated.

24. The reactor of claim 22 where one or more additional anodes are positioned coaxially to the plasma duct between the anode placed in the perpendicular magnetic field and the cathode chamber to extend a length of the plasma in the plasma duct.

25. The reactor of claim 24 where the cathode is positioned near the at least one additional anode positioned in the perpendicular magnetic field, at the proximal end of the cathode chamber, and wherein the distal anode positioned in the plasma duct is attached to the distal end of the cathode chamber.

26. A reactor configured for plasma assisted treatment of a powder, comprising:

a plasma duct configured to contain a high pressure, high potential, plasma;

a cathode chamber coupled to a proximal end of the plasma duct;

a remote arc discharge generation system configured to generate a flow of electrons through the plasma duct in a direction from the proximal end of the plasma duct toward a distal end of the plasma duct, the remote arc discharge generation system including (a) A cathodic arc source, positioned in the cathode chamber, configured to generate the electrons of the flow of electrons and (b) A distal anode, positioned in the plasma duct or past the distal end, configured to cause the flow of electrons;

a gas inlet coupled to the distal end for receiving a plasma-generating gas;

a gas outlet, coupled to the proximal end configured to remove at least a portion of the plasma-generating gas to generate a flow of an ionized gas through the plasma duct in direction from the distal end toward the proximal end, so as to generate ions from collisions between the electrons and the plasma-generating gas;

a separating baffle, positioned between the proximal end and the cathode chamber, for restricting a flow of the ionized gas out of the plasma duct to at least one orifice of the separating baffle and maintain (a) A high pressure and a high plasma potential in the plasma duct to generate a high density, high voltage remote arc plasma, (b) A low pressure and a low plasma potential in the cathode chamber favorable for generation of the electrons, (c) the high plasma potential in the plasma duct to increase energies of the ions, and (d) the low plasma potential in the cathode chamber to generate a plasma plume from overlapping counter propagating flows of the electrons and the plasma-generating gas through the at least one orifice, each orifice of the at least one orifice having a transverse extent in a range from 0.1 mm to 5 cm to maintain a stationary shock-wave front across the at least one orifice, the stationary shock-wave front separating the high pressure and the high plasma potential in the plasma duct from the low pressure and the low plasma potential in the cathode; and

a powder injector configured to inject the powder into the plasma duct for plasma treatment and surface modification of the powder;

wherein (e) each orifice of the at least one orifice is a straight nozzle-opening, a converging nozzle, or a converging-diverging de Laval supersonic nozzle for generating a supersonic plasma plume within the cathode chamber, (f) the cathode chamber is connected to a vacuum pumping system to maintain the low pressure in the cathode chamber, (g) the plasma duct is oriented horizontally being a rotatable barrel for coating of particles of the powder disposed in the rotatable barrel in a fluidized bed process, and (h) at least a portion of a reactive gas is recirculating.

27. The reactor of claim 26 where the plasma duct is enclosed within the vacuum chamber and the cathode is positioned elsewhere in the vacuum chamber.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2024
From: GOROKHOVSKY, VLADIMIR
To: NANO-PRODUCT ENGINEERING, LLC
Reel/Frame 068879/0328 →
Continuity (4)
Division 16373378 · Apr 2, 2019
Provisional Application 62726794 · Sep 4, 2018
Provisional Application 62653505 · Apr 5, 2018
Related Publication 20240043142A1 · Feb 8, 2024
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