IP Library › Granted Patent US 12,252,812
Granted Patent B2
US 12,252,812 · App. 18/434,568 · Granted Mar 18, 2025

Ultrapure mineralizer and improved methods for nitride crystal growth

Inventors: Mark P. D'Evelyn (Vancouver, WA); Paul M. Von Dollen (Brush Prairie, WA); Lisa M. Gay (Vancouver, WA); Douglas W. Pocius (Aguanga, CA); Jonathan D. Cook (Santa Barbara, CA)
Assignee: SLT Technologies, Inc.
C30B7/105C30B29/403
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Quick Facts
Patent No.
US 12,252,812
App. No.
18/434,568
Granted
Mar 18, 2025
Kind
B2
Abstract

A method for growth of group III metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process.

Claims (52)

1. A method for growth of group III metal nitride crystals, comprising:

providing a manifold comprising at least two transfer vessels, a first source vessel containing a condensable mineralizer composition comprising HF, a second source vessel containing ammonia, and a receiving vessel;

evacuating the receiving vessel;

transferring a first quantity of the condensable mineralizer composition to a first transfer vessel via a vapor phase and causing condensation of the condensable mineralizer composition within the first transfer vessel;

measuring the first quantity of the condensable mineralizer composition within the first transfer vessel;

transferring a second quantity of the measured first quantity of condensable mineralizer composition from the first transfer vessel to the receiving vessel;

transferring a first quantity of ammonia to a second transfer vessel;

transferring a second quantity of ammonia from the second transfer vessel to the receiving vessel via a liquid phase through a fill tube, wherein the fill tube has an inner diameter greater than 1 millimeter; and

forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises:

exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and

exposing the seed crystal to a mineralizer that is formed from the second quantity of condensable mineralizer composition and the second quantity of ammonia that were transferred to the receiving vessel,

wherein the first transfer vessel is heated to a temperature between 2 degrees Celsius and 50 degrees Celsius higher than a temperature of the receiving vessel during the transfer of the condensable mineralizer composition.

2. The method of claim 1 , wherein the fill tube has an inner diameter greater than 2 millimeters.

3. The method of claim 1 , wherein the first transfer vessel and the fill tube comprise at least one of silver, a silver alloy, Monel® 400, gold, platinum, palladium, rhodium, iridium, or ruthenium.

4. The method of claim 1 , wherein the second quantity of the condensable mineralizer composition is in a liquid phase when transferred from the first transfer vessel to the receiving vessel.

5. The method of claim 1 , wherein the second quantity of ammonia is transferred from the second transfer vessel to the receiving vessel in a liquid phase through a large-throat-diameter valve that comprises a ball valve.

6. The method of claim 1 , wherein liquid ammonia has a pressure higher than 7 atmospheres during the transfer of the second quantity of ammonia from the second transfer vessel to the receiving vessel.

7. A method for growth of group III metal nitride crystals, comprising:

providing a manifold comprising at least two transfer vessels, a first source vessel containing a condensable mineralizer composition comprising HF, a second source vessel containing ammonia, and a receiving vessel;

evacuating the receiving vessel;

transferring a first quantity of the condensable mineralizer composition to a first transfer vessel via a vapor phase and causing condensation of the condensable mineralizer composition within the first transfer vessel;

measuring the first quantity of the condensable mineralizer composition within the first transfer vessel;

transferring a second quantity of the measured first quantity of condensable mineralizer composition from the first transfer vessel to the receiving vessel;

transferring a first quantity of ammonia to a second transfer vessel;

transferring a second quantity of ammonia from the second transfer vessel to the receiving vessel via a liquid phase through a fill tube, wherein the fill tube has an inner diameter greater than 1 millimeter; and

forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises:

exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and

exposing the seed crystal to a mineralizer that is formed from the second quantity of condensable mineralizer composition and the second quantity of ammonia that were transferred to the receiving vessel,

wherein a valve and a connection between the second transfer vessel and the receiving vessel are heated to a temperature between about 25 degrees Celsius and about 250 degrees Celsius during the transfer of the second quantity of ammonia from the second transfer vessel to the receiving vessel.

8. The method of claim 7 , wherein the valve and the connection between the second transfer vessel and the receiving vessel are heated to a temperature between about 30 degrees Celsius and about 100 degrees Celsius during the transfer of the second quantity of ammonia from the second transfer vessel to the receiving vessel.

9. The method of claim 1 , wherein condensation of the condensable mineralizer composition within the first transfer vessel is achieved by chilling a metallic member within the first transfer vessel, wherein the metallic member comprises at least one of silver, a silver alloy, Monel® 400, gold, platinum, palladium, rhodium, iridium, or ruthenium and has a metallic surface that is configured to condense and chill the condensable mineralizer composition in a liquid phase.

10. The method of claim 1 , wherein a transferred quantity of the condensable mineralizer composition within the first transfer vessel is determined volumetrically, and further comprising measuring a temperature of the condensable mineralizer composition.

11. The method of claim 1 , wherein a fluid height of the condensable mineralizer composition is measured by a fluid level sensor, wherein the fluid level sensor comprises at least one of an ultrasonic level transmitter, a laser level transmitter, a guide pulse sensor, or a sensing guide pulse transducer.

12. The method of claim 1 , further comprising transferring a second mineralizer composition comprising at least one of chlorine, bromine, or iodine to the receiving vessel.

13. The method of claim 1 , further comprising passing the condensable mineralizer composition through a fractionating column and performing a fractional distillation purification process on the condensable mineralizer composition.

14. The method of claim 9 , wherein a purification of at least five theoretical plates is achieved, relative to a mineralizer composition received directly from the first source vessel.

15. The method of claim 1 , wherein the second transfer vessel is heated to a temperature between temperature between 2 degrees Celsius and 50 degrees Celsius higher than a temperature of the receiving vessel during the liquid phase transfer of ammonia.

16. The method of claim 1 , further comprising forming at least one group III metal nitride wafer from the group III metal nitride boule grown ammonothermally.

17. A method for growth of group III metal nitride crystals, comprising:

providing a manifold comprising a first transfer vessel, a source vessel containing a condensable mineralizer composition comprising HF, and a receiving vessel;

chilling a metallic member within the first transfer vessel, wherein the metallic member comprises at least one of silver, a silver alloy, Monel® 400, gold, platinum, palladium, rhodium, iridium, or ruthenium and has a metallic surface that is configured to condense and chill the condensable mineralizer composition in a liquid phase;

transferring a quantity of the condensable mineralizer composition to the first transfer vessel via a vapor phase and causing condensation of the condensable mineralizer composition within the first transfer vessel;

measuring the quantity of the condensable mineralizer composition within the first transfer vessel;

transferring at least a portion of the condensable mineralizer composition from the first transfer vessel to the receiving vessel;

transferring a measured quantity of ammonia to a second transfer vessel;

transferring the measured quantity of ammonia from the second transfer vessel to the receiving vessel; and

forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises:

exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and

exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel,

wherein the first transfer vessel is heated to a temperature between 2 degrees Celsius and 50 degrees Celsius higher than a temperature of the receiving vessel during the transfer of the condensable mineralizer composition.

18. The method of claim 17 , wherein at least a portion of the condensable mineralizer composition is transferred from the first transfer vessel to the receiving vessel in a liquid phase.

19. The method of claim 17 , wherein the measured quantity of ammonia is transferred from the second transfer vessel to the receiving vessel in a liquid phase.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2024
From: D'EVELYN, MARK P.; VON DOLLEN, PAUL M.; GAY, LISA M.; POCIUS, DOUGLAS W.; COOK, JONATHAN D.
To: SLT TECHNOLOGIES, INC.
Reel/Frame 066401/0105 →
Continuity (3)
Continuation 17514656 · Oct 29, 2021
Provisional Application 63108830 · Nov 2, 2020
Related Publication 20240240352A1 · Jul 18, 2024
References Cited (144)
US 6129900A · Satoh et al. · 2000 [cited by applicant]
US 6273948B1 · Porowski et al. · 2001 [cited by applicant]
US 6398867B1 · D'Evelyn et al. · 2002 [cited by applicant]
US 6406540B1 · Harris et al. · 2002 [cited by applicant]
US 6528427B2 · Chebi et al. · 2003 [cited by applicant]
US 6596079B1 · Vaudo et al. · 2003 [cited by applicant]
US 6656615B2 · Dwilinski et al. · 2003 [cited by applicant]
US 6765240B2 · Tischler et al. · 2004 [cited by applicant]
US 6861130B2 · D'Evelyn et al. · 2005 [cited by applicant]
US 6887144B2 · D'Evelyn et al. · 2005 [cited by applicant]
US 7053413B2 · D'Evelyn et al. · 2006 [cited by applicant]
US 7063741B2 · D'Evelyn et al. · 2006 [cited by applicant]
US 7078731B2 · D'Evelyn et al. · 2006 [cited by applicant]
US 7098487B2 · D'Evelyn et al. · 2006 [cited by applicant]
US 7125453B2 · D'Evelyn et al. · 2006 [cited by applicant]
US 7170095B2 · Vaudo et al. · 2007 [cited by applicant]
US 7175704B2 · D'Evelyn et al. · 2007 [cited by applicant]
US 7252712B2 · Dwilinski et al. · 2007 [cited by applicant]
US 7316746B2 · D'Evelyn et al. · 2008 [cited by applicant]
US 7364619B2 · Dwilinski et al. · 2008 [cited by applicant]
US 7368015B2 · D'Evelyn et al. · 2008 [cited by applicant]
US 7381391B2 · Spencer et al. · 2008 [cited by applicant]
US 7420261B2 · Dwili ski et al. · 2008 [cited by applicant]
US 7569206B2 · Spencer et al. · 2009 [cited by applicant]
US 7625446B2 · D'Evelyn et al. · 2009 [cited by applicant]
US 7642122B2 · Tysoe et al. · 2010 [cited by applicant]
US 7704324B2 · D'Evelyn et al. · 2010 [cited by applicant]
US 7705276B2 · Giddings et al. · 2010 [cited by applicant]
US 7976630B2 · Poblenz et al. · 2011 [cited by applicant]
US 8021481B2 · D'Evelyn · 2011 [cited by applicant]
US 8048225B2 · Poblenz et al. · 2011 [cited by applicant]
US 8097081B2 · D'Evelyn · 2012 [cited by applicant]
US 8148801B2 · D'Evelyn · 2012 [cited by applicant]
US 8303710B2 · D'Evelyn · 2012 [cited by applicant]
US 8323405B2 · D'Evelyn · 2012 [cited by applicant]
US 8329511B2 · D'Evelyn · 2012 [cited by applicant]
US 8354679B1 · D'Evelyn et al. · 2013 [cited by applicant]
US 8430958B2 · D'Evelyn · 2013 [cited by applicant]
US 8435347B2 · D'Evelyn et al. · 2013 [cited by applicant]
US 8444765B2 · D'Evelyn · 2013 [cited by applicant]
US 8461071B2 · D'Evelyn · 2013 [cited by applicant]
US 8465588B2 · Poblenz et al. · 2013 [cited by applicant]
US 8482104B2 · D'Evelyn et al. · 2013 [cited by applicant]
US 8492185B1 · D'Evelyn et al. · 2013 [cited by applicant]
US 9299555B1 · Alexander et al. · 2016 [cited by applicant]
US 10029955B1 · Rajeev et al. · 2018 [cited by applicant]
US 12024795B2 · D'Evelyn · 2024 [cited by examiner]
US 20020189532A1 · Motoki et al. · 2002 [cited by applicant]
US 20030127041A1 · Xu et al. · 2003 [cited by applicant]
US 20030140845A1 · D'Evelyn et al. · 2003 [cited by applicant]
US 20030183155A1 · D'Evelyn et al. · 2003 [cited by applicant]
US 20030209191A1 · Purdy · 2003 [cited by applicant]
US 20040000266A1 · D'Evelyn et al. · 2004 [cited by applicant]
US 20050087753A1 · D'Evelyn et al. · 2005 [cited by applicant]
US 20050098095A1 · D'Evelyn et al. · 2005 [cited by applicant]
US 20050205215A1 · Giddings et al. · 2005 [cited by applicant]
US 20060032428A1 · Dwilinski et al. · 2006 [cited by applicant]
US 20060037529A1 · D'Evelyn et al. · 2006 [cited by applicant]
US 20060037530A1 · Dwilinski et al. · 2006 [cited by applicant]
US 20060048699A1 · D'Evelyn et al. · 2006 [cited by applicant]
US 20060096521A1 · D'Evelyn et al. · 2006 [cited by applicant]
US 20060177362A1 · D'Evelyn et al. · 2006 [cited by applicant]
US 20060207497A1 · D'Evelyn et al. · 2006 [cited by applicant]
US 20070105351A1 · Motoki et al. · 2007 [cited by applicant]
US 20070141819A1 · Park et al. · 2007 [cited by applicant]
US 20070142204A1 · Park et al. · 2007 [cited by applicant]
US 20070151509A1 · Park et al. · 2007 [cited by applicant]
US 20070158785A1 · D'Evelyn et al. · 2007 [cited by applicant]
US 20070178039A1 · D'Evelyn et al. · 2007 [cited by applicant]
US 20070181056A1 · D'Evelyn et al. · 2007 [cited by applicant]
US 20080083741A1 · Giddings et al. · 2008 [cited by applicant]
US 20080083970A1 · Kamber et al. · 2008 [cited by applicant]
US 20080087919A1 · Tysoe et al. · 2008 [cited by applicant]
US 20080156254A1 · Dwilinski et al. · 2008 [cited by applicant]
US 20080193363A1 · Tsuji · 2008 [cited by applicant]
US 20090092536A1 · Kawabata et al. · 2009 [cited by applicant]
US 20090140287A1 · Fujiwara et al. · 2009 [cited by applicant]
US 20090301387A1 · D'Evelyn · 2009 [cited by applicant]
US 20090301388A1 · D'Evelyn · 2009 [cited by applicant]
US 20090309105A1 · Letts et al. · 2009 [cited by applicant]
US 20090320745A1 · D'Evelyn et al. · 2009 [cited by applicant]
US 20100003492A1 · D'Evelyn · 2010 [cited by applicant]
US 20100031872A1 · D'Evelyn · 2010 [cited by applicant]
US 20100031873A1 · D'Evelyn · 2010 [cited by applicant]
US 20100031874A1 · D'Evelyn · 2010 [cited by applicant]
US 20100031875A1 · D'Evelyn · 2010 [cited by applicant]
US 20100031876A1 · D'Evelyn · 2010 [cited by applicant]
US 20100075175A1 · Poblenz et al. · 2010 [cited by applicant]
US 20100104495A1 · Kawabata et al. · 2010 [cited by applicant]
US 20100147210A1 · D'Evelyn · 2010 [cited by applicant]
US 20100151194A1 · D'Evelyn · 2010 [cited by applicant]
US 20100189981A1 · Poblenz et al. · 2010 [cited by applicant]
US 20110100291A1 · D'Evelyn · 2011 [cited by applicant]
US 20110183498A1 · D'Evelyn · 2011 [cited by applicant]
US 20110220912A1 · D'Evelyn · 2011 [cited by applicant]
US 20110256693A1 · D'Evelyn et al. · 2011 [cited by applicant]
US 20110268645A1 · Mikawa et al. · 2011 [cited by applicant]
US 20120000415A1 · D'Evelyn et al. · 2012 [cited by applicant]
US 20120118223A1 · D'Evelyn · 2012 [cited by applicant]
US 20120137966A1 · D'Evelyn et al. · 2012 [cited by applicant]
US 20130119401A1 · D'Evelyn et al. · 2013 [cited by applicant]
US 20130251615A1 · D'Evelyn et al. · 2013 [cited by applicant]
US 20130323490A1 · D'Evelyn et al. · 2013 [cited by applicant]
US 20140065360A1 · D'Evelyn et al. · 2014 [cited by applicant]
US 20140147650A1 · Jiang et al. · 2014 [cited by applicant]
CN 101061570A · 2007 [cited by applicant]
JP H0658794A · 1994 [cited by applicant]
JP 2004360741A · 2004 [cited by applicant]
JP 2005289797A · 2005 [cited by applicant]
JP 2017160071A · 2017 [cited by applicant]
JP 6756495B2 · 2020 [cited by applicant]
WO 2006057463A1 · 2006 [cited by applicant]
WO 2007004495A1 · 2007 [cited by applicant]
WO 2010068916A1 · 2010 [cited by applicant]
WO 2011044554A1 · 2011 [cited by applicant]
Japanese Application No. 2021-176055, Office Action dated Jan. 25, 2023, 9 pages. [cited by applicant]
Dwilinski, et al, Journal of Crystal Growth 310, 3911 (2008). [cited by applicant]
Ehrentraut, et al., Journal of Crystal Growth 305, 204 (2007). [cited by applicant]
Wang, et al., Crystal Growth & Design 6, 1227 (2006). [cited by applicant]
Stepin, et al. Poluch. Anal. Vestchestv. Osoboi Chist., 5th, 91-94 (1978). [cited by applicant]
Naumova, et al. Zh. Prikh. Khim. 52, 249 (1979). [cited by applicant]
D'Evelyn et al. U.S. Appl. No. 13/472,356, filed May 15, 2012. [cited by applicant]
Callahan et al., ‘Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)’, MRS Internet Journal Nitride Semiconductor Research', vol. 4, No. 10, 1999, p. 1-6. [cited by applicant]
D'Evelyn et al., ‘Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method’, Journal of Crystal Growth, vol. 300, 2007, p. 11-16. [cited by applicant]
Ehrentraut et al., ‘The ammonothermal crystal growth of gallium nitride-A technique on the up rise’, Proceedings IEEE, 2010, 98(7), p. 1316-1323. [cited by applicant]
Fang., ‘Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy’, Physica Status Solidi, vol. 5, No. 6, 2008, p. 1508-1511. [cited by applicant]
Fujito et al., ‘Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE’, MRS Bulletin, May 2009, vol. 34, No. 5, p. 313-317. [cited by applicant]
Fukuda et al., ‘Prospects for the Ammonothermal Growth of Large GaN Crystal’, Journal of Crystal Growth, vol. 305, 2007, p. 304-310. [cited by applicant]
Gladkov et al., ‘Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN: Fe’, Journal of Crystal Growth, 312, 2010, p. 1205-1209. [cited by applicant]
Grzegory, ‘High pressure growth of bulk GaN from Solutions in gallium’, Journal of Physics Condensed Matter, vol. 13, 2001, p. 6875-6892. [cited by applicant]
Lide et al., ‘Thermal Conductivity of Ceramics and Other Insulating Materials’, CRC Handbook of Chemistry and Physics, 91 st Edition, 2010-2011, p. 12-203 and 12-204. [cited by applicant]
Lu et al., 'Structure of the Cl-passivated GaAs(111) surface', Physical Review B, Nov. 15, 1998, vol. 58, No. 20, p. 13820-13823. [cited by applicant]
Massies et al., ‘Surfactant mediated epitaxial growth of InxGal-xAs on GaAs (001 )’, Applied Physics Letters, vol. 61, No. 1, Jul. 6, 1992, p. 99-101. [cited by applicant]
Moutanabbir, ‘Bulk GaN lon Cleaving’, Journal of Electronic Materials, vol. 39, 2010, p. 482-488. [cited by applicant]
Oshima et al., ‘Thermal and Optical Properties of Bulk GaN Crystals Fabricated Through Hydride Vapor Phase Epitaxy With Void-Assisted Separation’, Journal of Applied Physics, vol. 98, No. 10, Nov. 18, 2005, p. 103509-1-… [cited by applicant]
Pattison et al., ‘Gallium Nitride Based Microcavity Light Emitting Diodes With 2A Effective Cavity Thickness’, Applied Physics Letters, vol. 90, Issue 3, 031111, 2007, 3 pages. [cited by applicant]
Porowski, ‘High Resistivity GaN Single Crystalline Substrates’, Acta Physica Polonica A, vol. 92, No. 2, 1997, p. 958-962. [cited by applicant]
Porowski, ‘Near Defect Free GaN Substrates’, Journal of Nitride Semiconductor, 1999, p. 1-11. [cited by applicant]
Sarva et al., ‘Dynamic Compressive Strength of Silicon Carbide Under Uniaxial Compression’, Material Sciences and Engineering, vol. A317, 2001, p. 140-144. [cited by applicant]
Sharma et al., ‘Vertically Oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gapselective photoelectrochemical etching’, Applied Physics Letters, vol. 87, 2005, p. 051107. [cited by applicant]
Sumiya et al., ‘High-pressure synthesis of high-purity diamond crystal’, Diamond and Related Materials, 1996, vol. 5, p. 1359-1365. [cited by applicant]
Tyagi et al., ‘Partial Strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (1122) GaN free standing substrates’, Applied Physics Letters 95, 2009, p.… [cited by applicant]
Wang et al, ‘Ammonothermal Growth of GaN Crystals in Alkaline Solutions’, Journal of Crystal Growth, vol. 287, 2006, p. 376-380. [cited by applicant]
Weisbuch et al., ‘Recent results and latest views on microcavity LEDs’, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, ed. By S.A. Stockman et al., Proc. SPIE, vol. 5366, 2004, p. 1-19. [cited by applicant]