Granted Patent B2

US 12,255,134 · App. 17/667,488 · Granted Mar 18, 2025

Inventors: Yi-Chun Huang (Hsinchu, TW); I-Chih Chen (Hsinchu, TW); Chun-Wei Kuo (Hsinchu, TW)

Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.; TSMC NANJING COMPANY, LIMITED

H01L23/5226H01L21/76807H01L21/76816H01L21/76834H01L23/5283

Abstract

Claims (39)

1. A method of forming a semiconductor structure, comprising:

forming a plurality of lower level conductive lines in a first dielectric layer, wherein the plurality of lower level conductive lines includes a first lower level conductive line, a second lower level conductive line adjacent to the first lower level conductive line, and a third lower level conductive line adjacent to the second lower level conductive line;

recessing portions of the first lower level conductive line and the third lower level conductive line below a top surface of the first dielectric layer to form recesses;

forming dielectric caps in the recesses, wherein a top-most surface of the dielectric caps is co-planar with a top-most surface of the second lower level conductive line;

depositing a second dielectric layer over the first dielectric layer;

forming a trench and a via opening in the second dielectric layer, wherein the via opening exposes a portion of the second lower level conductive line adjacent to the dielectric caps; and

forming an upper level conductive line and a via in the trench and in the via opening, respectively, wherein the via couples the upper level conductive line to the second lower level conductive line, and the upper level conductive line overlaps with the dielectric caps.

2. The method of claim 1 , wherein forming the trench and the via opening in the second dielectric layer comprises forming a via opening exposes a sidewall of the exposed portion of the second lower level conductive line adjacent to the one of the dielectric caps.

3. The method of claim 1 , wherein forming the dielectric caps comprises forming a dielectric cap layer over the first dielectric layer and the plurality of lower level conductive lines, wherein portions of the dielectric cap layer within the recesses provide the dielectric caps, and the second dielectric layer is formed over the dielectric cap layer.

4. The method of claim 1 , wherein forming the trench and the via opening comprises etching the second dielectric layer and the dielectric cap layer, wherein the trench extends through an upper portion of the second dielectric layer, and the via opening extends through a lower portion of the second dielectric layer and the dielectric cap layer.

5. The method of claim 1 , wherein forming the dielectric caps comprises:

forming a dielectric cap layer over the first dielectric layer and the plurality of lower level conductive lines, wherein the dielectric cap layer fills the recesses; and

removing a portion of the dielectric cap layer above the top surface of the first dielectric layer from the top surface of the first dielectric layer, wherein portions of the dielectric cap layer remaining within the recesses constitute the dielectric caps.

6. The method of claim 5 , further comprising forming an etch stop layer over the first dielectric layer, the dielectric caps and the plurality of lower level conductive lines, wherein forming the trench and the via opening comprises etching the second dielectric layer and the etch stop layer, wherein the trench extends through an upper portion of the second dielectric layer, and the via opening extends through a lower portion of the second dielectric layer and the etch stop layer.

7. A method of forming a semiconductor structure, comprising:

forming a plurality of lower level conductive lines in a first dielectric layer, wherein the plurality of lower level conductive lines includes a first lower level conductive line, a second lower level conductive line adjacent to the first lower level conductive line;

depositing a second dielectric layer over the first dielectric layer;

forming a trench and a via opening in the second dielectric layer, wherein the via opening exposes a portion of the second lower level conductive line, and the via opening extends below an upper-most surface of the second lower level conductive line;

forming an upper level conductive line and a via in the trench and in the via opening, respectively, wherein the via couples the upper level conductive line to the second lower level conductive line, and the via extends into the first dielectric layer; and

forming an etch stop layer over the first dielectric layer, wherein forming the second dielectric layer comprises forming the second dielectric layer over the etch stop layer, wherein forming the etch stop layer comprises forming the etch stop layer in direct contact with the second lower level conductive line, and forming the etch stop layer separated from the first lower level conductive line.

8. The method of claim 7 , further comprising:

removing a portion of the first lower level conductive line; and

forming a dielectric cap over the first lower level conductive line following removing the portion of the first lower level conductive line.

9. The method of claim 8 , wherein forming the dielectric cap comprises forming the dielectric cap over the second lower level conductive line.

10. The method of claim 8 , wherein forming the via opening comprises forming the via opening through the dielectric cap.

11. The method of claim 7 , wherein forming the via opening comprises forming the via opening extending below the upper-most surface of the second lower level conductive line between the second lower level conductive line and the first lower level conductive line.

12. The method of claim 8 , wherein forming the etch stop layer comprises forming the etch stop layer over the dielectric cap.

13. The method of claim 7 , wherein forming the via comprises forming the via comprising a metal liner between a metal portion of the via and the second dielectric layer.

14. The method of claim 7 , wherein forming the via opening comprises forming the via opening extending through the etch stop layer.

15. A method of forming a semiconductor structure, comprising:

forming a first conductive line and a second conductive line in a first dielectric layer, wherein the first conductive line and the second conductive line each extend along a first direction;

recessing the first conductive line, wherein a thickness of the second conductive line is greater than a thickness of the recessed first conductive line;

forming a third conductive line in a second dielectric layer overlying the first dielectric layer, wherein the third conductive line extends along a second direction different from the first direction and above at least the second conductive line, and forming the third conductive line comprises:

forming a via in the second dielectric layer and electrically connecting the second conductive line and the third conductive line, wherein a first portion of the via lands on a portion of the second conductive line, and a second portion of the via extends between the first conductive line and the second conductive line in the second direction.

16. The method of claim 15 , further comprising forming a dielectric cap layer over the recessed first conductive line.

17. The method of claim 16 , wherein forming the dielectric cap layer comprises forming the dielectric cap layer over the second conductive line.

18. The method of claim 16 , wherein forming the via comprises forming the via extending through the dielectric cap layer.

19. The method of claim 15 , wherein forming the via comprises forming the via extending below an upper most surface of the second conductive line.

20. The method of claim 15 , wherein forming the via comprises forming the via simultaneously with forming the third conductive line.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (34)