IP Library › Granted Patent US 12,261,574
Granted Patent B2
US 12,261,574 · App. 18/207,066 · Granted Mar 25, 2025

24 to 30GHZ wide band CMOS power amplifier with turn-off mode high impedance

Inventors: Che-Chun Kuo (San Jose, CA); Siu-Chuang Ivan Lu (San Jose, CA); Sang Won Son (Palo Alto, CA); Xiaohua Yu (San Jose, CA)
Assignee: Samsung Electronics Co., Ltd.
H03F1/565H03F3/245H03F2200/06H03F2200/165H03F2200/222H04B1/04
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,261,574
App. No.
18/207,066
Granted
Mar 25, 2025
Kind
B2
Abstract

A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in series, wherein the transformer and the capacitor act as a second order filter; and a port connected to the capacitor and a receiver switch.

Claims (32)

1. A wide band matching network, comprising:

a power amplifier transistor connected to an output network;

the output network including:

a capacitor;

an on-chip transformer connected to the capacitor in series, wherein the on-chip transformer and the capacitor act as a second order filter; and

a port connected to the capacitor and a receiver switch, wherein the output network acts as impedance to prevent signal from entering the output network when the power amplifier transistor is off and the receiver switch is on.

2. The wide band matching network of claim 1 , wherein when the power amplifier transistor is on and the receiver switch is off, the output network performs power amplifier matching.

3. The wide band matching network of claim 1 , wherein the on-chip transformer is derived from an ideal second order filter, wherein an ideal series capacitor within the second order filter is represented as a first ideal capacitor and a second ideal capacitor, wherein the first ideal capacitor is converted to the capacitor and the second ideal capacitor is converted to a parasitic capacitor of the on-chip transformer.

4. The wide band matching network of claim 1 , wherein ideal inductors of an ideal second order filter are converted to parasitic inductors of the on-chip transformer.

5. The wide band matching network of claim 1 , wherein ideal capacitors of an ideal second order filter are converted to parasitic capacitors of the on-chip transformer and parasitic capacitors of power amplifier transistor.

6. The wide band matching network of claim 1 , wherein ideal resistors in an ideal second order filter are converted to parasitic resistors of power amplifier transistor.

7. The wide band matching network of claim 1 , wherein the output network comprises a power amplifier balun, wherein the power amplifier balun and the capacitor act as a transmitter.

8. A method, comprising:

determining whether to operate a power amplifier network in a power amplifier-on/receiver-off mode or a power amplifier-off/receiver-on mode;

when the power amplifier-on/receiver-off mode is selected, ensuring a power amplifier is on and a receiver switch is off, and performing power amplifier impedance matching; and

when the power amplifier-off/receiver-on mode is selected, ensuring the power amplifier is off and the receiver switch is on, wherein the power amplifier network acts as impedance to prevent signal from entering the power amplifier network.

9. The method of claim 8 , wherein the power amplifier network comprises an on-chip transformer that is connected to a capacitor in series and is derived from an ideal second order filter, wherein the on-chip transformer and the capacitor act as a second order filter, wherein an ideal series capacitor within the second order filter is represented as a first ideal capacitor and a second ideal capacitor, wherein the first ideal capacitor is converted to the capacitor and the second ideal capacitor is converted to a parasitic capacitor of the on-chip transformer.

10. The method of claim 8 , wherein the power amplifier network comprises an on-chip transformer in which ideal inductors of an ideal second order filter are converted to parasitic inductors.

11. The method of claim 8 , wherein the power amplifier network comprises an on-chip transformer in which ideal capacitors of an ideal second order filter are converted to parasitic capacitors.

12. The method of claim 8 , wherein the power amplifier network comprises an on-chip transformer in which ideal resistors of an ideal second order filter are converted to parasitic resistors.

13. The method of claim 8 , wherein the power amplifier network comprises a power amplifier balun and a series capacitor, wherein the power amplifier balun and the series capacitor act as a transmitter.

14. A system, comprising:

a processor; and

a memory storing non-transitory processor-executable instructions that, when executed by the processor, cause the processor to:

determine whether to operate a power amplifier network in a power amplifier-on/receiver-off mode or a power amplifier-off/receiver-on mode;

when the power amplifier-on/receiver-off mode is selected, ensure a power amplifier is on and a receiver switch is off, and perform power amplifier impedance matching; and

when the power amplifier-off/receiver-on mode is selected, ensure the power amplifier is off and the receiver switch is on, wherein the power amplifier network acts as impedance to prevent signal from entering the power amplifier network.

15. The system of claim 14 , wherein the power amplifier network comprises an on-chip transformer that is connected to a capacitor in series and is derived from an ideal second order filter, wherein the on-chip transformer and the capacitor act as a second order filter, wherein an ideal series capacitor within the second order filter is represented as a first ideal capacitor and a second ideal capacitor, wherein the first ideal capacitor is converted to the capacitor and the second ideal capacitor is converted to a parasitic capacitor of the on-chip transformer.

16. The system of claim 14 , wherein the power amplifier network comprises an on-chip transformer in which ideal inductors of an ideal second order filter are converted to parasitic inductors.

17. The system of claim 14 , wherein the power amplifier network comprises an on-chip transformer in which ideal capacitors of an ideal second order filter are converted to parasitic capacitors.

18. The system of claim 14 , wherein the power amplifier network comprises an on-chip transformer in which ideal resistors of an ideal second order filter are converted to parasitic resistors.

19. The system of claim 14 , wherein the power amplifier network comprises a power amplifier balun and a series capacitor, wherein the power amplifier balun and the series capacitor act as a transmitter.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2023
From: KUO, CHE-CHUN; LU, SIU-CHUANG IVAN; SON, SANG WON; YU, XIAOHUA
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 064372/0924 →
Continuity (3)
Continuation 17111337 · Dec 3, 2020
Provisional Application 63068651 · Aug 21, 2020
Related Publication 20230318539A1 · Oct 5, 2023
References Cited (17)
US 7408404B2 · Osman et al. · 2008 [cited by applicant]
US 7602240B2 · Gao et al. · 2009 [cited by applicant]
US 8947041B2 · Cook et al. · 2015 [cited by applicant]
US 9780605B2 · Kurs et al. · 2017 [cited by applicant]
US 9831847B2 · Babaie et al. · 2017 [cited by applicant]
US 10063191B2 · Sengupta et al. · 2018 [cited by applicant]
US 10103696B1 · Mitzlaff · 2018 [cited by examiner]
US 10439575B1 · Kuo · 2019 [cited by applicant]
US 20090289721A1 · Rajendran · 2009 [cited by examiner]
US 20120075034A1 · Afshari · 2012 [cited by examiner]
US 20150236546A1 · Kesler et al. · 2015 [cited by applicant]
US 20150333791A1 · Anderson · 2015 [cited by applicant]
US 20190245507A1 · Chi · 2019 [cited by applicant]
US 20190334560A1 · Chi · 2019 [cited by applicant]
US 20200403586A1 · Cao · 2020 [cited by applicant]
US 20210067183A1 · Abbasi · 2021 [cited by applicant]
US 20210194125A1 · Bellaouar · 2021 [cited by examiner]