Vertical fuse memory in one-time program memory cells
View Patent ↗In some embodiments, the present disclosure relates to an integrated chip (IC) memory structure. The IC memory structure includes a first conductor over a substrate and a second conductor over the first conductor. The first conductor is vertically separated from the second conductor by an isolation structure. A first channel structure is arranged on a sidewall of the isolation structure. The first channel structure is vertically between the first conductor and the second conductor. A vertical gate electrode is disposed along sidewalls of the first conductor, the second conductor, and the first channel structure. The sidewall of the first channel structure faces away from the isolation structure.
1. An integrated chip (IC) memory structure, comprising:
a first conductor over a substrate;
a second conductor over the first conductor, the first conductor being vertically separated from the second conductor by an isolation structure;
a first channel structure arranged on a sidewall of the isolation structure, the first channel structure being vertically between the first conductor and the second conductor; and
a vertical gate electrode disposed along sidewalls of the first conductor, the second conductor, and the first channel structure, the sidewall of the first channel structure facing away from the isolation structure.
2. The IC memory structure of claim 1 , wherein the first conductor has an upper surface that laterally extends past a second sidewall of the first channel structure and the sidewall of the isolation structure.
3. The IC memory structure of claim 1 , further comprising:
a second channel structure disposed on an opposing side of the isolation structure as the first channel structure, wherein the isolation structure has a larger width than either of the first channel structure and the second channel structure.
4. The IC memory structure of claim 3 , further comprising:
a second vertical gate electrode disposed along second sidewalls of the second conductor, the first conductor, and the second channel structure.
5. The IC memory structure of claim 1 , wherein the first channel structure is vertically and directly between the first conductor and the second conductor.
6. The IC memory structure of claim 1 , further comprising:
a third conductor over the second conductor;
a fourth conductor over the third conductor, the third conductor being vertically separated from the fourth conductor by a second isolation structure; and
a third channel structure arranged on a sidewall of the second isolation structure, the third channel structure being vertically between the third conductor and the fourth conductor and being vertically separated from a top surface of the first channel structure by a non-zero vertical distance.
7. The IC memory structure of claim 6 , wherein the first conductor is separated from the second conductor by a first vertical distance and the second conductor is separated from the third conductor by a second vertical distance that is smaller than the first vertical distance.
8. An integrated chip (IC) memory structure, comprising:
a first conductor over a dielectric over a substrate;
a second conductor over the first conductor, the first conductor being vertically separated from the second conductor by an isolation structure;
a first channel structure arranged on a sidewall of the isolation structure, the first channel structure being vertically between the first conductor and the second conductor, wherein the first channel structure has a width that is smaller than the first conductor;
a vertical gate electrode disposed along sidewalls of the first conductor, the second conductor, and the first channel structure, the sidewall of the first channel structure facing away from the isolation structure; and
a gate dielectric disposed over the dielectric and continuously extending along opposing sidewalls and a lower surface of the vertical gate electrode.
9. The IC memory structure of claim 8 , wherein the vertical gate electrode extends over a top of the second conductor.
10. The IC memory structure of claim 8 ,
wherein the gate dielectric laterally contacts the vertical gate electrode, the first conductor, the second conductor, and the first channel structure.
11. The IC memory structure of claim 8 , further comprising:
a third conductor arranged over the substrate and laterally spaced apart from the first conductor, wherein the vertical gate electrode is laterally between the first conductor and the third conductor;
a fourth conductor over the third conductor;
a second isolation structure vertically arranged between the third conductor and the fourth conductor; and
a second channel structure arranged on a side of the second isolation structure that faces the isolation structure.
12. The IC memory structure of claim 11 , wherein the first channel structure is damaged and the second channel structure is substantially undamaged.
13. The IC memory structure of claim 11 , wherein the first conductor and the third conductor are symmetrically disposed around a center of the vertical gate electrode.
14. The IC memory structure of claim 8 , wherein the vertical gate electrode has a larger height than the first channel structure.
15. The IC memory structure of claim 8 , wherein the first conductor and the second conductor comprise doped polysilicon, tungsten, cobalt, nickel, nickel platinum, or titanium nitride.
16. The IC memory structure of claim 8 , wherein the first channel structure comprises polysilicon, molybdenum sulfide, tungsten selenide, molybdenum selenide, or indium gallium zinc oxide.
17. The IC memory structure of claim 8 , wherein the width of the first channel structure is smaller than a height of the first channel structure.
18. An integrated chip (IC) memory structure, comprising:
a first conductor over a substrate;
a second conductor over the first conductor, the first conductor being vertically separated from the second conductor by an isolation structure;
a first channel structure arranged on a sidewall of the isolation structure, the first channel structure being vertically between the first conductor and the second conductor;
a vertical gate electrode disposed along sidewalls of the first conductor, the second conductor, and the first channel structure, the sidewall of the first channel structure facing away from the isolation structure;
a second channel structure vertically extending along a second side of the isolation structure and being vertically between the first conductor and the second conductor; and
a second vertical gate electrode on a second sidewall of the first conductor, a second sidewall of the second conductor, and on a sidewall of the second channel structure facing away from the isolation structure.
19. The IC memory structure of claim 18 , wherein the first channel structure has a bottommost surface over the first conductor and a topmost surface below the second conductor.
20. The IC memory structure of claim 18 , wherein the second conductor has a lower surface that laterally extends past the sidewall of the isolation structure.