Sacrificial capping layer for contact etch
A method which includes providing a substrate having a source/drain region and an etch stop layer on the source/drain region. A plasma etching process is performed using an etching gas that removes the etch stop layer and forms a sacrificial oxide capping layer on the source/drain region. The sacrificial oxide capping layer is then from the source/drain region.
1. A method comprising:
providing a substrate comprising an epitaxial source/drain region and an etch stop layer on the epitaxial source/drain region;
performing a plasma etching process using an etching gas that removes the etch stop layer and forms a sacrificial oxide capping layer on the epitaxial source/drain region; and
removing the sacrificial oxide capping layer from the epitaxial source/drain region using an etch process that does not damage the epitaxial source/drain region under the sacrificial oxide capping layer.
2. The method of claim 1 , wherein:
the substrate comprises a metal gate stack separated from the source/drain region by a spacer, and
the etch stop layer is a conformal layer having a first portion covering the epitaxial source/drain region and a second portion covering the spacer and the metal gate stack.
3. The method of claim 2 , wherein:
the performing a plasma etching process comprises completely removing the first portion of the etch stop layer to expose the epitaxial source/drain region before completely removing the second portion of the etch stop layer, and
forming the sacrificial oxide capping layer on the exposed epitaxial source/drain region while completely removing the second portion of the etch stop layer.
4. The method of claim 1 , wherein the epitaxial source/drain region contains Si, Ge, or both Si and Ge.
5. The method of claim 1 , wherein the performing a plasma etching process comprises forming a sacrificial oxide capping layer comprising SiO 2 , GeO 2 , or SiGeO x .
6. The method of claim 1 , wherein the etch stop layer contains a nitride layer.
7. The method of claim 1 , wherein the etch stop layer contains SiN.
8. The method of claim 1 , wherein the performing a plasma etching process comprises using an etching gas comprising a fluorocarbon-containing gas and an oxygen-containing gas.
9. The method of claim 8 , wherein the fluorocarbon-containing gas comprises a fluorocarbon gas, a hydrofluorocarbon gas, or a combination thereof.
10. The method of claim 8 , wherein the oxygen-containing gas comprises O 2 , O 3 , CO, CO 2 , SO 2 or a combination thereof.
11. The method of claim 1 , wherein the removing the sacrificial oxide capping layer comprises performing a wet etch process on the substrate.
12. The method of claim 1 , wherein the removing the sacrificial oxide capping layer performing a dry etch process on the substrate.
13. A method comprising:
providing a substrate comprising and epitaxial source/drain region and a SiN etch stop layer on the epitaxial source/drain region, the epitaxial source/drain region containing Si, Ge, or both Si and Ge;
performing a plasma etching process using an etching gas containing a fluorocarbon-containing gas and an oxygen-containing gas that removes the SiN etch stop layer and forms a sacrificial oxide capping layer on the epitaxial source/drain region; and
removing the sacrificial oxide capping layer from the epitaxial source/drain region using a wet or dry etch process that does not damage the epitaxial source/drain region under the sacrificial oxide capping layer.
14. The method of claim 13 , wherein:
the substrate comprises a metal gate stack separated from the epitaxial source/drain region by a spacer, and
the SiN etch stop layer is a conformal layer having a first portion covering the epitaxial source/drain region and a second portion covering the spacer and the metal gate stack.
15. The method of claim 14 , wherein
the performing a plasma etching process comprises completely removing the first portion of the etch stop layer to expose the epitaxial source/drain region before completely removing the second portion of the etch stop layer, and
forming the sacrificial oxide capping layer on the exposed epitaxial source/drain region while completely removing the second portion of the etch stop layer.
16. The method of claim 13 , wherein the sacrificial oxide capping layer contains SiO 2 , GeO 2 , or SiGeO x .
17. The method of claim 13 , wherein the fluorocarbon-containing gas includes a fluorocarbon gas, a hydrofluorocarbon gas, or a combination thereof.
18. The method of claim 13 , wherein the oxygen-containing gas includes O 2 , O 3 , CO, CO 2 , SO 2 , or a combination thereof.
19. A method comprising:
providing a substrate comprising an epitaxial source/drain region and a SiN etch stop layer on the epitaxial source/drain region, the epitaxial source/drain region containing Si, Ge, or both Si and Ge;
performing a plasma etching process using an etching gas containing CH 3 F gas and O 2 gas that removes the SiN etch stop layer and forms a sacrificial oxide capping layer on the epitaxial source/drain region, the sacrificial oxide capping layer containing SiO 2 , GeO 2 , or SiGeO x ; and
removing the sacrificial oxide capping layer from the epitaxial source/drain region using a wet or dry etch process that does not damage the epitaxial source/drain region under the sacrificial oxide capping layer.
20. The method of claim 19 , wherein:
the substrate comprises a metal gate stack separated from the epitaxial source/drain region by a spacer;
the SiN etch stop layer is a conformal layer having a first portion covering the epitaxial source/drain region and a second portion covering the spacer and the metal gate stack;
the performing a plasma etching process comprises completely removing the first portion of the etch stop layer to expose the epitaxial source/drain region before completely removing the second portion of the etch stop layer, and
forming the sacrificial oxide capping layer on the exposed epitaxial source/drain region while completely removing the second portion of the etch stop layer.