Semiconductor device package having dummy dies
A semiconductor device package is provided. The semiconductor device package includes a substrate, a first package component, a second package component, and at least one dummy die. The first and second package components are disposed over and bonded to the substrate. The first and second package components are different types of electronic components that provide different functions. The dummy die is disposed over and attached to the substrate. The dummy die is located between the first and second package components and is electrically isolated from the substrate.
1. A semiconductor device package, comprising:
a substrate;
a first package component and a second package component disposed over and bonded to the substrate, wherein the first and second package components are different types of electronic components that provide different functions;
at least one dummy die disposed over and attached to the substrate, wherein the dummy die is between the first and second package components and is electrically isolated from the substrate, and
wherein the dummy die has a first portion between adjacent sidewalls of the first and second package components and attached to the package substrate, and a second portion extending continuously from the first portion to top surfaces of the first and second package components; and
an underfill element disposed between the substrate, the first package component, the second package component and the at least one dummy die, wherein the underfill element has a maximum height lower than a bottom surface of the second portion of the dummy die.
2. The semiconductor device package as claimed in claim 1 , wherein the dummy die is substantially free of any functional circuitry.
3. The semiconductor device package as claimed in claim 1 , wherein there is a first gap formed between the first and second package components and extending in a first direction, and the dummy die extends in the first direction with a second gap formed between the dummy die and the first package component and a third gap formed between the dummy die and the second package component, wherein the second and third gaps are smaller than the first gap.
4. The semiconductor device package as claimed in claim 3 , wherein the at least one dummy die includes a plurality of dummy dies, and the dummy dies are arranged in the first direction.
5. The semiconductor device package as claimed in claim 1 , further comprising:
a plurality of electrical connectors disposed between the first package component and the substrate and between the second package component and the substrate for electrically connecting the first and second package components to the substrate; and
an attaching structure disposed between the dummy die and the substrate for attaching the dummy die to the substrate;
wherein the underfill element is configured to surround the electrical connectors and the attaching structure.
6. The semiconductor device package as claimed in claim 5 , wherein the underfill element extends up along sidewalls of the first portion of the dummy die, and a top surface of the underfill element is spaced apart from the bottom surface of the second portion of the dummy die, and a top surface of the dummy die is exposed from the underfill element.
7. The semiconductor device package as claimed in claim 5 , wherein the dummy die has a greater modulus of elasticity than the underfill element.
8. The semiconductor device package as claimed in claim 1 , wherein a top surface of the dummy die is higher than the top surfaces of the first and second package components, and a total thickness of the first portion and the second portion of the dummy die is greater than a thickness of the first and second package components in a vertical direction.
9. A semiconductor device package, comprising:
a substrate having a first surface;
a first package component and a second package component bonded to the first surface, wherein the first and second package components are different types of electronic components that provide different functions;
a dummy die attached to the first surface, wherein the dummy die is in a gap between the first and second package components and is electrically isolated from the substrate, wherein a coefficient of thermal expansion (CTE) of the dummy die is similar to that of the substrate, and
wherein the dummy die has a first portion between adjacent sidewalls of the first and second package components and attached to the package substrate, and a second portion extending continuously from the first portion to top surfaces of the first and second package components; and
an underfill element disposed between the substrate, the first package component, the second package component and the dummy die, wherein the underfill element has a maximum height lower than a bottom surface of the second portion of the dummy die.
10. The semiconductor device package as claimed in claim 9 , wherein the dummy die is bulk metal, with the entirety formed of a homogeneous high-modulus material, and the high-modulus material comprises copper or stainless steel.
11. The semiconductor device package as claimed in claim 9 , wherein the dummy die has a greater modulus of elasticity than the underfill element.
12. The semiconductor device package as claimed in claim 9 , wherein a width of the first portion of the dummy die is smaller than a width of the gap in a horizontal direction, and a width of the second portion of the dummy die is larger than the width of the gap in the horizontal direction.
13. A semiconductor device package, comprising:
a substrate;
a first package component and a second package component disposed over and bonded to the substrate;
at least one dummy die disposed over and attached to the substrate, wherein the dummy die is between the first and second package components and is electrically isolated from the substrate; and
an underfill element disposed between the first package component, the second package component and the at least one dummy die, wherein the dummy die has a greater modulus of elasticity than the underfill element,
wherein the dummy die has a first portion between adjacent sidewalls of the first and second package components and attached to the package substrate, and a second portion extending continuously from the first portion to top surfaces of the first and second package components, and
wherein the underfill element has a maximum height lower than a bottom surface of the second portion of the dummy die.
14. The semiconductor device package as claimed in claim 13 , further comprising:
a plurality of electrical connectors disposed between the first package component and the substrate and between the second package component and the substrate for electrically connecting the first and second package components to the substrate, wherein the underfill element is also disposed to surround the electrical connectors.
15. The semiconductor device package as claimed in claim 13 , wherein the at least one dummy die comprises silicon, copper or stainless steel.
16. The semiconductor device package as claimed in claim 13 , wherein the at least one dummy die is substantially free of any functional circuitry.
17. The semiconductor device package as claimed in claim 13 , wherein the first package component is a processor die and the second package component is a memory die.
18. The semiconductor device package as claimed in claim 13 , wherein the second portion is on top of the first portion and extends laterally to cover a part of the top surface of the first package component and a part of the top surface of the second package component.
19. The semiconductor device package as claimed in claim 13 , wherein a height of the first portion is equal to a height of the first package component or equal to a height of the second package component, and the height of the first portion is greater than the maximum height of the underfill element.
20. The semiconductor device package as claimed in claim 11 , wherein the underfill element extends up along all sidewalls of the dummy die and laterally surrounds all the sidewalls of the dummy die in a top view, wherein a top surface of the dummy die is higher than a top surface of the underfill element in a vertical direction.