Image sensing device
An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.
1. An image sensing device comprising:
a plurality of unit pixel groups consecutively arranged in a first direction and a second direction perpendicular to the first direction,
wherein each of the unit pixel groups includes first to fourth unit pixels adjacent to each other, wherein each of the first to fourth unit pixels includes a plurality of active regions divided by a device isolation structure,
wherein the active regions in the fourth unit pixel are arranged in a different structure from the active regions of the first to third unit pixels,
wherein each of the first to third unit pixels includes first to third active regions, and the fourth unit pixel include fourth and fifth active regions,
wherein the fourth active region is disposed at a center portion of the fourth unit pixel, and the fifth active region surrounds side surfaces of the fourth active region in four directions.
2. The image sensing device according to claim 1 , wherein
the first active region is disposed at a center portion of a corresponding unit pixel, and
the second and third active regions surround side surfaces of the first active region in four directions.
3. The image sensing device according to claim 2 , wherein:
the first active region includes a well tap region for applying a bias voltage to a well region of a corresponding unit pixel;
the second active region includes a source follower transistor and a selection transistor; and
the third active region includes a transfer transistor and a floating diffusion region.
4. The image sensing device according to claim 1 , wherein:
the fourth active region includes a well tap region for applying a bias voltage to a well region of the fourth unit pixel; and
the fifth active region includes a reset transistor, a transfer transistor, and a floating diffusion region.
5. The image sensing device according to claim 1 , wherein each of the first to fourth unit pixels includes a floating diffusion region, wherein the floating diffusion regions of the first to fourth unit pixels are coupled to a common floating diffusion node through a conductive line.
6. The image sensing device according to claim 5 , wherein each of the first to third unit pixels includes a source follower transistor configured to generate an amplification signal corresponding to a voltage at the common floating diffusion node, and a selection transistor configured to output the amplification signal to an output node in response to a selection signal.
7. The image sensing device according to claim 6 , wherein the fourth unit pixel includes a reset transistor configured to reset the common floating diffusion node in response to a reset signal.
8. The image sensing device according to claim 7 , wherein
the first active region is disposed at a center portion of a corresponding unit pixel, and
the second and third active regions surround side surfaces of the first active region in four directions.
9. The image sensing device according to claim 8 , wherein:
the first active region includes a well tap region for applying a bias voltage to a well region of a corresponding unit pixel;
the second active region includes a source follower transistor and a selection transistor; and
the third active region includes a transfer transistor and a floating diffusion region.