IP Library › Granted Patent US 12,266,847
Granted Patent B2
US 12,266,847 · App. 18/395,617 · Granted Apr 1, 2025

Semiconductor packages and manufacturing methods thereof

Inventors: Yung-Ping Chiang (Hsinchu County, TW); Chao-Wen Shih (Hsinchu County, TW); Shou-Zen Chang (New Taipei, TW); Albert Wan (Hsinchu, TW); Yu-Sheng Hsieh (New Taipei, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01Q1/2283H01L21/768H01L23/3107H01L23/3128H01L23/481H01L23/528H01L23/66H01L24/14H01L24/82H01Q1/38H01Q9/04H01Q21/065H01L21/568H01L2223/6627H01L2223/6677H01L2224/13024H01L2224/13111H01L2224/13113H01L2224/13116H01L2224/13139H01L2224/13147H01L2224/13155H01L2224/18H01L2924/1431
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Quick Facts
Patent No.
US 12,266,847
App. No.
18/395,617
Granted
Apr 1, 2025
Kind
B2
Abstract

Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Claims (33)

1. A semiconductor package, comprising:

a semiconductor chip, having a first side and a second side opposite to each other and comprising a connector protruding from the first side thereof;

an encapsulant, disposed around the semiconductor chip and in contact with the connector;

a first redistribution layer structure, disposed at the first side of the semiconductor chip and comprising a first conductive feature in contact with the connector of the semiconductor chip and a plurality of second conductive features laterally aside the first conductive feature, wherein the second conductive features are separated from the semiconductor chip by a polymer material of the first redistribution layer structure; and

a second redistribution layer structure, disposed at the second side of the semiconductor chip.

2. The semiconductor package of claim 1 , wherein a semiconductor substrate of the semiconductor chip is in contact with a polymer material of the second redistribution layer structure.

3. The semiconductor package of claim 1 , wherein the second conductive features of the first redistribution layer structure comprise an antenna transmitter structure and an antenna receiver structure.

4. The semiconductor package of claim 3 , wherein from a top view, the antenna transmitter structure is outside of a chip region of the semiconductor chip, and the antenna receiver structure is within the chip region of the semiconductor chip.

5. The semiconductor package of claim 3 , wherein the antenna transmitter structure surrounds the antenna receiver structure.

6. The semiconductor package of claim 3 , wherein the antenna receiver structure has an island shape, a snake shape, a bar shape, a fishbone shape, a fence shape, a grid shape, a ring shape or a combination thereof.

7. The semiconductor package of claim 1 , wherein the semiconductor chip has a sensing surface at the first side.

8. The semiconductor package of claim 1 , further comprising a protection layer covering the first redistribution layer structure.

9. The semiconductor package of claim 1 , further comprising bumps electrically connected to the second redistribution layer structure.

10. A semiconductor package, comprising:

a semiconductor chip, having a first side and a second side opposite to each other and comprising a connector protruding from the first side thereof;

a first redistribution layer structure, disposed at the first side of the semiconductor chip and electrically connected to the connector;

an encapsulant, surrounding a sidewall of the semiconductor chip, extending into a space between the first redistribution layer structure and the semiconductor chip, and encapsulating the connector; and

a second redistribution layer structure, disposed at the second side of the semiconductor chip, wherein the second side of the semiconductor chip is free of metal features and in contact with the second redistribution layer structure.

11. The semiconductor package of claim 10 , wherein a semiconductor substrate of the semiconductor chip is in contact with a polymer material of the second redistribution layer structure.

12. The semiconductor package of claim 10 , further comprising a first portion of a polymer layer disposed between and in contact with a redistribution layer of the first redistribution layer structure and the encapsulant.

13. The semiconductor package of claim 12 , further comprising a plurality of sensing patterns, an antenna transmitter structure and an antenna receiver structure laterally aside a redistribution layer of the first redistribution layer structure.

14. The semiconductor package of claim 13 , wherein the sensing patterns are located on a second portion of the polymer layer.

15. The semiconductor package of claim 13 , further comprising a protection layer covering the antenna transmitter structure and the antenna receiver structure while exposing top surfaces of the sensing patterns.

16. The semiconductor package of claim 13 , wherein each of the antenna transmitter structure and the antenna receiver structure has a bar shape, a spiral shape, a wave shape, a meandering shape or a combination thereof.

17. The semiconductor package of claim 13 , wherein each of the sensing patterns has a split-ring shape.

18. A method of forming a semiconductor package, comprising:

providing a semiconductor chip having a first side and a second side opposite to each other and comprising a connector protruding from the first side thereof;

encapsulating the semiconductor chip with an encapsulant, wherein the encapsulant is in contact with the connector;

forming a first redistribution layer structure at the first side of the semiconductor chip, wherein the first redistribution layer structure comprises a first conductive feature in contact with the connector of the semiconductor chip and a plurality of second conductive features laterally side the first conductive feature, wherein the second conductive features are separated from the semiconductor chip by a polymer material of the first redistribution layer structure;

forming a protection layer over the first redistribution layer structure; and

forming a second redistribution layer structure at the second side of the semiconductor chip.

19. The method of claim 18 , wherein a semiconductor substrate of the semiconductor chip is in contact with a polymer material of the second redistribution layer structure.

20. The method of claim 18 , wherein the second conductive features are formed as an antenna transmitter structure and an antenna receiver structure.

Continuity (7)
Continuation 17874252 · Jul 26, 2022
Continuation 17227387 · Apr 12, 2021
Continuation 16858743 · Apr 27, 2020
Continuation 16219979 · Dec 14, 2018
Continuation 15235106 · Aug 12, 2016
Provisional Application 62341633 · May 26, 2016
Related Publication 20240128635A1 · Apr 18, 2024
References Cited (21)
US 8361842B2 · Yu et al. · 2013 [cited by applicant]
US 8680647B2 · Yu et al. · 2014 [cited by applicant]
US 8703542B2 · Lin et al. · 2014 [cited by applicant]
US 8759964B2 · Pu et al. · 2014 [cited by applicant]
US 8778738B1 · Lin et al. · 2014 [cited by applicant]
US 8785299B2 · Mao et al. · 2014 [cited by applicant]
US 8803306B1 · Yu et al. · 2014 [cited by applicant]
US 8809996B2 · Chen et al. · 2014 [cited by applicant]
US 8829676B2 · Yu et al. · 2014 [cited by applicant]
US 8877554B2 · Tsai et al. · 2014 [cited by applicant]
US 11855333B2 · Chiang · 2023 [cited by examiner]
US 20110291288A1 · Wu et al. · 2011 [cited by applicant]
US 20130062760A1 · Hung et al. · 2013 [cited by applicant]
US 20130062761A1 · Lin et al. · 2013 [cited by applicant]
US 20130168848A1 · Lin et al. · 2013 [cited by applicant]
US 20130264684A1 · Yu et al. · 2013 [cited by applicant]
US 20130307140A1 · Huang et al. · 2013 [cited by applicant]
US 20140203429A1 · Yu et al. · 2014 [cited by applicant]
US 20140225222A1 · Yu et al. · 2014 [cited by applicant]
US 20140252646A1 · Hung et al. · 2014 [cited by applicant]
US 20140264930A1 · Yu et al. · 2014 [cited by applicant]