Advanced temperature control for wafer carrier in plasma processing chamber
An advanced temperature control system and method are described for a wafer carrier in a plasma processing chamber. In one example a heat exchanger provides a temperature controlled thermal fluid to a fluid channel of a workpiece carrier and receives the thermal fluid from the fluid channel. A proportional valve is between the heat exchanger and the fluid channel to control the rate of flow of thermal fluid from the heat exchanger to the fluid channel. A pneumatic valve is also between the heat exchanger and the fluid channel also to control the rate of flow of thermal fluid from the heat exchanger and the fluid channel. A temperature controller receives a measured temperature from a thermal sensor of the carrier and controls the proportional valve and the pneumatic valve in response to the measured temperature to adjust the rate of flow of the thermal fluid.
1. A workpiece processing system, comprising:
a plasma chamber;
a plasma source to generate a plasma containing gas ions in the plasma chamber;
a workpiece holder in the chamber to hold a workpiece during plasma processing and to control the temperature of the workpiece, the workpiece holder having a first fluid channel and a second fluid channel;
a first flow line coupled to the first fluid channel of the workpiece holder, the first flow line comprising a first supply flow line and a first return flow line, the first return flow line coupled to only a single return manifold;
a second flow line coupled to the second fluid channel of the workpiece holder, the second flow line comprising a second supply flow line and a second return flow line, the second return flow line coupled to only the single return manifold, the single return manifold coupled to a corresponding single heat exchanger, the single heat exchanger coupled to the first supply flow line and to the second supply flow line, wherein an entirety of an output of the first return flow line and the second return flow line is input into the single return manifold, and wherein the entirety of the output of the first return flow line and the second return flow line is the same as an entirety of an output of the first supply flow line and the second supply flow line;
a first valve coupled to the first supply flow line, the first valve between the single return manifold and the workpiece holder;
a second valve coupled to the second supply flow line, the second valve between the single return manifold and the workpiece holder;
a first flow meter between the first valve and the single return manifold, the first flow meter in series with the first valve; and
a second flow meter between the second valve and the single return manifold, the second flow meter in series with the second valve.
2. The workpiece processing system of claim 1 , wherein the first and second flow meters are between the workpiece holder and the single return manifold.
3. The workpiece processing system of claim 1 , wherein the first valve comprises a first pressure regulated valve and the second valve comprises a second pressure regulated valve.
4. The workpiece processing system of claim 3 , further comprising:
a first pressure regulator coupled to the first pressure regulated valve to control the first pressure regulated valve; and
a second pressure regulator coupled to the second pressure regulated valve to control the second pressure regulated valve.
5. The workpiece processing system of claim 1 , further comprising:
a third valve between the single return manifold and the first valve; and
a fourth valve between the single return manifold and the second valve.
6. The workpiece processing system of claim 1 , further comprising:
a temperature controller to receive a measured temperature from a thermal sensor of the workpiece holder and to control the first valve and the second valve in response to the measured temperature to adjust the rate of flow of a thermal fluid.
7. The workpiece processing system of claim 1 , wherein the thermal fluid comprises polyethers.