Substrate processing apparatus, substrate suppport and method of manufacturing semiconductor device
A substrate processing apparatus includes a process chamber in which one or more substrates are processed; and a substrate support configured to support the one or more substrates in the process chamber. The substrate support includes one or more plate-shaped structures arranged in the substrate support in a manner corresponding to the one or more substrates, and a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion.
1. A substrate processing apparatus comprising:
a process chamber in which one or more substrates are processed; and
a substrate support configured to support the one or more substrates in the process chamber,
wherein the substrate support comprises one or more plate-shaped structures arranged in the substrate support in a manner corresponding to the one or more substrates,
wherein a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion, and
wherein the outer peripheral portion of the plate-shaped structure is provided as a separate body from the central portion of the plate-shaped structure.
2. The substrate processing apparatus of claim 1 , wherein the thickness of the outer peripheral portion of the plate-shaped structure is greater than the thickness of the central portion of the plate-shaped structure.
3. The substrate processing apparatus of claim 1 , wherein the central portion of the plate-shaped structure faces a substrate among the one or more substrates.
4. The substrate processing apparatus of claim 1 , wherein the plate-shaped structure is arranged in the substrate support such that a front surface of the plate-shaped structure faces a back surface of an immediately upper substrate among the one or more substrates located immediately above the plate-shaped structure and is disposed parallel to the back surface of the immediately upper substrate.
5. The substrate processing apparatus of claim 1 , wherein the plate-shaped structure is arranged in the substrate support such that a space between the plate-shaped structure and a front surface of an immediately lower substrate among the one or more substrates located immediately below the plate-shaped structure is greater than a space between the plate-shaped structure and a back surface of an immediately upper substrate among the one or more substrates located immediately above the plate-shaped structure.
6. The substrate processing apparatus of claim 1 , wherein a thickness of the plate-shaped structure is increased along a radial direction from an inside to an outside of the plate-shaped structure.
7. The substrate processing apparatus of claim 1 , wherein the thickness of the outer peripheral portion of the plate-shaped structure is set to be greater than the thickness of the central portion of the plate-shaped structure over an entire circumference along a circumferential direction of the plate-shaped structure.
8. The substrate processing apparatus of claim 1 , wherein a back surface of the outer peripheral portion of the plate-shaped structure protrudes further than a back surface of the central portion of the plate-shaped structure.
9. The substrate processing apparatus of claim 1 , wherein the plate-shaped structure is made of a highly thermal conductive material.
10. The substrate processing apparatus of claim 1 , further comprising
a heater configured to heat the process chamber,
wherein the central portion of the plate-shaped structure is made of a material capable of absorbing heat from the heater more easily than a material constituting the outer peripheral portion of the plate-shaped structure.
11. The substrate processing apparatus of claim 1 , wherein a front surface of the plate-shaped structure is subject to a surface treatment such that a surface area of the front surface of the plate-shaped structure is substantially equal to a surface area of a back surface of an immediately upper substrate among the one or more substrates located immediately above the plate-shaped structure.
12. The substrate processing apparatus of claim 1 , wherein the substrate support is configured to support the one or more substrates in a vertical direction with a predetermined gap therebetween, and
wherein a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures arranged in a central portion of the substrate support is thinner than a thickness of a central portion of another plate-shaped structure among the one or more plate-shaped structures arranged in an upper portion or a lower portion of the substrate support.
13. The substrate processing apparatus of claim 1 , wherein the substrate support is configured to support the one or more substrates in a vertical direction with a predetermined gap therebetween, and
wherein a plate-shaped structure among the one or more plate-shaped structures arranged in a central portion of the substrate support is made of a material different from that of another plate-shaped structure among the one or more plate-shaped structures arranged in an upper portion or a lower portion of the substrate support.
14. A method of manufacturing a semiconductor device, comprising:
performing a predetermined process on a substrate by using the substrate processing apparatus according to claim 1 .
15. A substrate support configured to support a substrate in a process chamber of a substrate processing apparatus, the substrate support comprising
a plate-shaped structure,
wherein a thickness of a central portion of the plate-shaped structure is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion,
wherein the plate-shaped structure is arranged in the substrate support in a manner corresponding to the substrate while the substrate support supports the substrate, and
wherein the outer peripheral portion of the plate-shaped structure is provided as a separate body from the central portion of the plate-shaped structure.
16. A substrate processing apparatus comprising:
a process chamber in which one or more substrates are processed;
a substrate support configured to support the one or more substrates in the process chamber; and
a gas nozzle, through which a process gas is supplied to the one or more substrates in the process chamber, provided with a plurality of gas supply holes,
wherein the substrate support comprises one or more plate-shaped structures arranged in the substrate support in a manner corresponding to the one or more substrates,
wherein a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion,
wherein the substrate support is configured to support the one or more substrates in a vertical direction with a predetermined gap therebetween, and
wherein the plate-shaped structure is arranged such that a vertical position of a gas supply hole among the plurality of gas supply holes provided corresponding to the plate-shaped structure is located between a back surface of the outer peripheral portion of the plate-shaped structure and a front surface of an immediately lower substrate among the one or more substrates located immediately below the plate-shaped structure.
17. A method of manufacturing a semiconductor device, comprising:
performing a predetermined process on a substrate by using the substrate processing apparatus of claim 16 .