Bipolar junction transistors with a nanosheet intrinsic base
Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a collector having a first semiconductor layer, an emitter having a second semiconductor layer, an intrinsic base including nanosheet channel layers positioned with a spaced arrangement in a layer stack, and a base contact laterally positioned between the first and second semiconductor layers. Each nanosheet channel layer extends laterally from the first semiconductor layer to the second semiconductor layer. Sections of the base contact are respectively positioned in spaces between the nanosheet channel layers. The structure further includes first spacers laterally positioned between the sections of the base contact and the first semiconductor layer, and second spacers laterally positioned between the sections of the base contact and the second semiconductor layer.
1. A structure for a bipolar junction transistor, the structure comprising:
a collector including a first semiconductor layer;
an emitter including a second semiconductor layer;
an intrinsic base including a plurality of nanosheet channel layers positioned with a spaced arrangement in a layer stack, each nanosheet channel layer extending laterally from the first semiconductor layer to the second semiconductor layer;
a base contact laterally positioned between the first semiconductor layer and the second semiconductor layer, the base contact including a plurality of sections that are respectively positioned in spaces between the nanosheet channel layers, and the base contact comprising a metal;
a first plurality of spacers laterally positioned between the sections of the base contact and the first semiconductor layer;
a second plurality of spacers laterally positioned between the sections of the base contact and the second semiconductor layer; and
a plurality of heavily-doped semiconductor layers respectively positioned between the nanosheet channel layers and the sections of the base contact, each heavily-doped semiconductor layer having a p-type dopant concentration that is greater than 1×10 19 cm −3 .
2. The structure of claim 1 wherein each heavily-doped semiconductor layer fully wraps about a central portion of one of the nanosheet channel layers.
3. The structure of claim 2 wherein each nanosheet channel layer includes a first end portion abutted with the first semiconductor layer and a second end portion abutted with the second semiconductor layer, and the central portion is laterally arranged between the first end portion and the second end portion.
4. The structure of claim 2 wherein each heavily-doped semiconductor layer is in direct contact with one of the nanosheet channel layers, and the nanosheet channel layers comprise silicon-germanium, and the heavily-doped semiconductor layers comprise silicon.
5. The structure of claim 2 wherein each heavily-doped semiconductor layer is in direct contact with one of the nanosheet channel layers, the first plurality of spacers are laterally arranged between the heavily-doped semiconductor layers and the first semiconductor layer, and the second plurality of spacers are laterally arranged between the heavily-doped semiconductor layers and the second semiconductor layer.
6. The structure of claim 1 wherein each heavily-doped semiconductor layer is in direct contact with one of the nanosheet channel layers.
7. The structure of claim 1 wherein the nanosheet channel layers comprise silicon-germanium, and the heavily-doped semiconductor layers comprise silicon.
8. The structure of claim 1 wherein the first plurality of spacers are laterally arranged between the heavily-doped semiconductor layers and the first semiconductor layer, and the second plurality of spacers are laterally arranged between the heavily-doped semiconductor layers and the second semiconductor layer.
9. The structure of claim 1 wherein each nanosheet channel layer includes a central portion, a first end portion abutted with the first semiconductor layer, and a second end portion abutted with the second semiconductor layer, the central portion is laterally arranged between the first end portion and the second end portion, and one of the sections of the base contact is positioned in each space adjacent to the central portion of one of the nanosheet channel layers.
10. The structure of claim 1 wherein the metal is tungsten.
11. The structure of claim 10 wherein the nanosheet channel layers comprise silicon-germanium.
12. The structure of claim 1 wherein the first plurality of spacers and the second plurality of spacers comprise a dielectric material that is an electrical insulator.
13. The structure of claim 1 wherein the base contact extends in a vertical direction above the nanosheet channel layers in the layer stack.
14. A method of fabricating a structure for a bipolar junction transistor, the method comprising:
forming a collector including a first semiconductor layer;
forming an emitter including a second semiconductor layer;
forming an intrinsic base including a plurality of nanosheet channel layers positioned with a spaced arrangement in a layer stack, wherein each nanosheet channel layer extends laterally from the first semiconductor layer to the second semiconductor layer;
forming a base contact laterally positioned between the first semiconductor layer and the second semiconductor layer, wherein the base contact includes a plurality of sections that are respectively positioned in spaces between the nanosheet channel layers, and the base contact comprises a metal;
forming a first plurality of spacers laterally positioned between the sections of the base contact and the first semiconductor layer;
forming a second plurality of spacers laterally positioned between the sections of the base contact and the second semiconductor layer; and
forming a plurality of heavily-doped semiconductor layers respectively positioned between the nanosheet channel layers and the sections of the base contact, wherein each heavily-doped semiconductor layer having a p-type dopant concentration that is greater than 1×10 19 cm −3 .
15. The method of claim 14 wherein each heavily-doped semiconductor layer fully wraps about a central portion of one of the nanosheet channel layers, each nanosheet channel layer includes a first end portion abutted with the first semiconductor layer and a second end portion abutted with the second semiconductor layer, and the central portion is laterally arranged between the first end portion and the second end portion.
16. The method of claim 14 wherein the first plurality of spacers are laterally arranged between the heavily-doped semiconductor layers and the first semiconductor layer, and the second plurality of spacers are laterally arranged between the heavily-doped semiconductor layers and the second semiconductor layer.
17. The method of claim 14 wherein each heavily-doped semiconductor layer is in direct contact with one of the nanosheet channel layers, the nanosheet channel layers comprise silicon-germanium, and the heavily-doped semiconductor layers comprise silicon.
18. The method of claim 14 wherein the base contact extends in a vertical direction above the nanosheet channel layers in the layer stack.
19. The method of claim 14 wherein the metal is tungsten.
20. The method of claim 19 wherein the nanosheet channel layers comprise silicon-germanium.