Semiconductor memory device and method for fabricating the same
A method for fabricating a semiconductor memory device is provided. The method includes: etching a first region of the semiconductor memory device to expose a first capping layer; forming a second capping layer on the first capping layer; etching a portion of the first capping layer and a portion of the second capping layer to form a first trench reaching a first metal line; and forming a second metal line in the first trench to contact the first metal line.
1. A method for fabricating a semiconductor memory device, the method comprising:
depositing a bottom capping layer over a substrate in a first region and a second region of the substrate;
forming a memory cell having a bottom electrode, a memory element, and a top electrode in the first region, wherein the bottom electrode is disposed in an opening of the bottom capping layer;
forming a first portion of a top capping layer on a top surface of the top electrode and extending to the second region of the substrate over the bottom capping layer;
while a masking element is disposed over the first region, performing an etching process on layers of the second region, wherein the etching process reduces a thickness of the bottom capping layer in the second region; and
after the etching process, forming a second portion of the top capping layer over the first region and the second region.
2. The method of claim 1 , wherein the performing the etching process that reduces the thickness of the bottom capping layer in the second region includes providing a trench extending through the bottom capping layer.
3. The method of claim 2 , wherein the providing the trench extending through the bottom capping layer includes exposing a first metal line in the second region.
4. The method of claim 3 , wherein the first metal line in the second region is coplanar with a second metal line in the first region, the second metal line being under the bottom electrode.
5. The method of claim 4 , wherein the bottom electrode interfaces a top surface of the second metal line.
6. The method of claim 1 , wherein the performing the etching process on layers of the second region includes etching a plurality of dielectric layers from the second region.
7. The method of claim 1 , wherein the depositing the bottom capping layer includes depositing silicon carbide.
8. The method of claim 7 , wherein the forming the first portion of a top capping layer includes depositing silicon carbide.
9. A method for fabricating a semiconductor memory device, the method comprising:
depositing a first capping layer in a first region and a second region of the semiconductor memory device;
forming a first memory cell in the first region of the semiconductor memory device over the first capping layer;
after forming the first memory cell, forming a second capping layer over the first memory cell in the first region;
after forming the second capping layer, etching an opening in the first capping layer in the second region to expose a metal line; and
after the etching the opening, depositing a third capping layer over the first region and the second region of the semiconductor memory device, wherein the third capping layer interfaces a portion of the second capping layer in the first region and interfaces the exposed metal line in the second region.
10. The method of claim 9 , wherein the forming the second capping layer includes depositing the second capping layer in the second region and subsequently removing the second capping layer from the second region.
11. The method of claim 10 , further comprising: forming a plurality of dielectric layers extending from the first region to the second region between depositing the first capping layer and forming the second capping layer.
12. The method of claim 9 , wherein the forming the first capping layer and the forming the second capping layer include depositing silicon carbide.
13. The method of claim 9 , wherein the forming the second capping layer includes depositing the second capping layer directly on a top electrode of the first memory cell.
14. The method of claim 9 , wherein the forming the first memory cell includes forming a bottom electrode, a magnetic tunnel junction (MTJ) element, and a top electrode.
15. The method of claim 9 , further comprising: forming a trench extending through the first capping layer and the third capping layer in the second region.
16. A method for fabricating a semiconductor memory device, the method comprising:
depositing a first capping layer over a substrate in a first region and a second region of the substrate;
forming a memory cell having a bottom electrode, a magnetic tunnel junction (MTJ) structure, and a top electrode in the first region, wherein the bottom electrode is disposed in an opening of the first capping layer;
forming a first portion of a second capping layer on a top surface of the top electrode and extending to the second region of the substrate over the first capping layer, wherein the second capping layer is a first composition;
while a masking element is disposed over the first region, performing an etching process on layers of the second region, wherein the etching process reduces a thickness of the second capping layer in the second region; and
after the etching process, depositing the first composition to form a second portion of the second capping layer over the first region and the second region.
17. The method of claim 16 , where the first composition includes silicon carbide.
18. The method of claim 16 , further comprising:
forming spacers on sidewalls of the MTJ structure.
19. The method of claim 18 , wherein the first capping layer interfaces an uppermost surface of the spacers.
20. The method of claim 16 , wherein the forming the first portion of the second capping layer disposes the first portion of the second capping layer directly on the top surface of the top electrode.