Method for controlling a semiconductor manufacturing process
A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.
1. A method for controlling a semiconductor manufacturing process, the method comprising:
obtaining first metrology data based on measurements performed after a first process step and before at least one additional process step;
obtaining second metrology data based on measurements performed after the first process step and the at least one additional process step;
estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data;
determining a Key Performance Indicator (KPI) or a correction for the first process step, using the first metrology data and the estimated contribution; and
correcting, optimizing or otherwise configuring the process based on the KPI or the correction and/or providing a signal representing, or based on, the KPI or the correction to a tool or a system for use by the tool or the system in correction, optimization or other configuration of the process,
wherein the data comprised within the first metrology data is distributed less densely across the one or more substrates compared to the data comprised within the second metrology data.
2. The method of claim 1 , wherein the first and second metrology data comprise overlay data measured on one or more substrates being subject to the process.
3. The method of claim 1 , wherein the first metrology data comprises alignment data associated with a first layer on a current substrate and the second metrology data comprises overlay data associated with at least one second layer applied subsequently to the first layer on one or more previous substrates.
4. The method of claim 3 , wherein the first process step is development of a photosensitive resist applied to the one or more substrates and the at least one additional process step comprises at least an etching, polishing or cleaning step performed on the one or more substrates.
5. The method of claim 2 , wherein the estimated contribution is associated with the control action and wherein the estimating comprises mapping an expected effect of the control action to a grid layout associated with the first metrology data and the determining of the KPI or the correction comprises subtracting the mapped effect of the control action from the overlay data comprised within the first metrology data.
6. The method of claim 5 , wherein the estimating of the contribution to the process of the control action takes a correction potential of an apparatus used in the first process step into account.
7. The method of claim 5 , further comprising configuring the process using overlay data obtained by subtracting the mapped effect of the control action from the overlay data comprised within the first metrology data.
8. The method of claim 2 , wherein the estimated contribution is associated with the control action and wherein the estimating comprises modeling an expected effect of the control action to a high order modeled fingerprint and the determining of the KPI or the correction comprises correcting the overlay data comprised within the first metrology data using the high order modeled fingerprint.
9. The method of claim 8 , further comprising configuring the process using the corrected overlay data obtained by correcting the overlay data comprised within the first metrology data using the high order modeled fingerprint.
10. The method of claim 1 , wherein the first metrology data is input for a first model used in controlling the process and the second metrology data is input for a second model used in controlling the process.
11. The method of claim 10 , wherein the first model describes a fingerprint of a parameter across an area of a substrate and the second model describes a fingerprint of the parameter across a region, smaller than the area, of the substrate.
12. The method of claim 11 , wherein the region is a field on the substrate.
13. The method of claim 2 , further comprising densifying the overlay data comprised within the first metrology data to obtain densified overlay data having at least values for positions across the one or more substrates associated with the overlay data comprised within the second metrology data.
14. The method of claim 1 , wherein the first metrology data is alignment data and the second metrology data is dense substrate in-plane deformation (IPD) data.
15. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
obtain first metrology data based on measurements performed after a first process step of a process and before at least one additional process step;
obtain second metrology data based on measurements performed after the first process step and the at least one additional process step;
estimate a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data;
determine a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution; and
cause correction, optimization or other configuration of the process based on the KPI or the correction and/or provide a signal representing, or based on, the KPI or the correction to a tool or a system for use by the tool or the system in correction, optimization or other configuration of the process,
wherein the data comprised within the first metrology data is distributed less densely across the one or more substrates compared to the data comprised within the second metrology data.
16. The computer program product of claim 15 , wherein the first metrology data comprises alignment data associated with a first layer on a current substrate and the second metrology data comprises overlay data associated with at least one second layer applied subsequently to the first layer on one or more previous substrates.
17. A method for configuring a processing apparatus, the method comprising:
obtaining first metrology data based on measurements performed within the processing apparatus;
obtaining second metrology data provided to an external control interface of the processing apparatus;
using the second metrology data to correct the first metrology data to obtain corrected first metrology data;
modeling the corrected first metrology data; and
combining the modeled corrected first metrology data and the second metrology data to configure the processing apparatus.
18. The method of claim 17 , wherein the first metrology data is alignment data, the second metrology data is dense substrate in-plane deformation (IPD) data and the processing apparatus is a lithographic apparatus.
19. The method of claim 17 , wherein the first metrology data is alignment data, the second metrology data is dense overlay data and the processing apparatus is a lithographic apparatus.
20. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:
obtain first metrology data based on measurements performed within a processing apparatus;
obtain second metrology data provided to an external control interface of the processing apparatus;
use the second metrology data to correct the first metrology data to obtain corrected first metrology data;
model the corrected first metrology data; and
combine the modeled corrected first metrology data and the second metrology data to configure the processing apparatus.