Semiconductor device and manufacturing method thereof
View Patent ↗According to one embodiment, a semiconductor device includes a substrate; a semiconductor chip provided on the substrate; a resin covering the semiconductor chip; and a metal film provided on the resin. The metal film includes a first metal layer provided on the resin, a second metal layer provided on the first metal layer, and a third metal layer provided on the second metal layer. The first metal layer and the second metal layer contain a same material, and a particle diameter of the second metal layer is smaller than a particle diameter of the first metal layer.
1. A manufacturing method of a semiconductor device comprising:
providing a semiconductor chip on a substrate;
covering the semiconductor chip with a resin;
forming a first metal layer around the resin at a temperature of 200° C. or higher;
forming a second metal layer, containing the same material as the first metal layer, on the first metal layer at a temperature of 150° C. or less;
forming a third metal layer on the second metal layer; and
providing a fourth metal layer between the resin and the first metal layer at a temperature of 150° C. or less.
2. The manufacturing method of the semiconductor device according to claim 1 , wherein
the first metal layer and the second metal layer are formed in different chambers.
3. The manufacturing method of the semiconductor device according to claim 1 , wherein
the first metal layer and the second metal layer contain copper.
4. The manufacturing method of the semiconductor device according to claim 1 , wherein
the first metal layer, the second metal layer, and the third metal layer are formed by sputtering.
5. The manufacturing method of the semiconductor device according to claim 1 , wherein
the first metal layer includes copper formed with a purity of 99.99% or more, and the second metal layer includes copper formed with a purity of less than 99.99%.