Granted Patent B2

US 12,285,840 · App. 17/600,189 · Granted Apr 29, 2025

Inventors: Yuki Nakano (Saga, JP); Ryoya Terakawa (Saga, JP); Takayuki Kihara (Saga, JP); Hiroki Ota (Saga, JP)

Assignee: SUMCO CORPORATION

B24B37/32B24B37/102H01L21/30625

Abstract

Claims (48)

1. A polishing head comprising:

a first ring-shaped member having an opening;

a plate-shaped member that closes the opening on an upper side of the first ring-shaped member;

a membrane that closes the opening on a lower side of the first ring-shaped member;

a back pad adhered to a lower surface of the membrane, such that no space is formed between the back pad and the membrane; and

a second ring-shaped member located below the back pad and having an opening that holds a polishing target workpiece, wherein

a space, formed by closing the opening of the first ring-shaped member by the plate-shaped member and the membrane, comprises:

a central region; and

an outer peripheral region partitioned from the central region by a partition,

an inner peripheral edge region of the second ring-shaped member is located vertically below an outer peripheral edge of the outer peripheral region, and

the partition is connected to the plate-shaped member.

2. The polishing head according to claim 1 ,

wherein the back pad is disposed between an outer peripheral portion on the lower surface of the membrane and an annular upper surface of the second ring-shaped member.

3. The polishing head according to claim 2 ,

which comprises:

an introducing path that introduces gas into the central region; and

an introducing path that introduces gas into the outer peripheral region.

4. The polishing head according to claim 1 ,

which comprises:

an introducing path that introduces gas into the central region; and

an introducing path that introduces gas into the outer peripheral region.

5. A polishing apparatus comprising:

the polishing head according to claim 1 ;

a polishing pad; and

a surface plate that supports the polishing pad.

6. A method of manufacturing a semiconductor wafer, the method comprising polishing a surface of a polishing target wafer with the polishing apparatus according to claim 5 to form a polished surface.

7. The method of manufacturing a semiconductor wafer according to claim 6 ,

wherein the polishing head comprises:

an introducing path that introduces gas into the central region; and

an introducing path that introduces gas into the outer peripheral region.

8. The method of manufacturing a semiconductor wafer according to claim 6 ,

wherein the back pad is disposed between an outer peripheral portion on the lower surface of the membrane and an annular upper surface of the second ring-shaped member.

9. The method of manufacturing a semiconductor wafer according to claim 8 ,

wherein the polishing head comprises:

an introducing path that introduces gas into the central region; and

an introducing path that introduces gas into the outer peripheral region.

10. The polishing apparatus according to claim 5 ,

wherein the back pad is disposed between an outer peripheral portion on the lower surface of the membrane and an annular upper surface of the second ring-shaped member.

11. The polishing apparatus according to claim 10 ,

wherein the polishing head comprises:

an introducing path that introduces gas into the central region; and

an introducing path that introduces gas into the outer peripheral region.

12. The polishing apparatus according to claim 5 ,

wherein the polishing head comprises:

an introducing path that introduces gas into the central region; and

an introducing path that introduces gas into the outer peripheral region.

13. The polishing head according to claim 1 ,

wherein a height of the space is 3.5 mm to 5.5 mm in a state in which gas is not introduced into the space.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (32)