Processing method of wafer
Energy is locally supplied to a cutting surface that is formed in an outer circumferential region of a wafer in a trimming step, before a grinding step of grinding the wafer. This can remove or repair at least part of a damage layer formed in the outer circumferential region of the wafer due to the trimming step. As a result, breakage of the wafer that originates from the outer circumferential region in the grinding of the wafer which has been subjected to the edge trimming and generation of dust in a step after this grinding can be suppressed.
1. A processing method of a wafer in which the wafer having an outer circumferential region that is beveled is ground to be thinned, the processing method comprising:
a trimming step of making a cutting blade cut into the outer circumferential region that is beveled from one surface side of the wafer and annularly cutting the outer circumferential region that is beveled to remove at least part of the outer circumferential region that is beveled; and
a cutting surface treatment step of, after execution of the trimming step, locally supplying energy to a cutting surface that is formed in the outer circumferential region in the trimming step;
wherein the trimming step results in a damage layer being formed in the vicinity of the cutting surface and wherein a portion of the damage layer is removed during the treatment step,
wherein the wafer has a thickness direction and a perpendicular longitudinal direction, wherein the outer circumferential region is spaced from a central region of the wafer in the longitudinal direction,
wherein during the trimming step, a beveled portion of the outer circumferential region of the wafer remains after the trimming step whereby the cutting surface exposed has a first surface extending in the longitudinal direction and a second surface extending in the thickness direction, wherein the damage layer comprises a first portion extending in the longitudinal direction and a second portion extending in the thickness direction,
wherein the treatment step comprises removing the second portion of the damage layer extending in the thickness direction.
2. The processing method of claim 1 further comprising after the treatment step grinding the wafer to thereby thin the wafer.
3. The processing method of claim 2 wherein prior to the trimming step, bonding the wafer to a support wafer.
4. The processing method of claim 2 wherein a beveled portion of the outer circumferential region of the wafer remains after the trimming step, and
wherein grinding the wafer comprises grinding the wafer so as to remove the beveled portion of the outer circumferential region of the wafer that remained after the trimming step.
5. The processing method of claim 4 wherein prior to grinding the wafer, bonding the wafer to a support wafer.
6. The processing method of claim 2 wherein prior to grinding the wafer, bonding the wafer to a support wafer.
7. A processing method of a wafer in which the wafer having an outer circumferential region that is beveled is to be ground to be thinned, the processing method comprising:
a trimming step of making a cutting blade cut into the outer circumferential region that is beveled from one surface side of the wafer and annularly cutting the outer circumferential region that is beveled to remove at least part of the outer circumferential region that is beveled and thereby exposing a cutting surface formed in the outer circumferential region in the trimming step, whereby a damage layer is formed in the vicinity of the cutting surface; and
a treatment step of, after execution of the trimming step, locally supplying energy to the damage layer,
wherein the wafer has a thickness direction and a perpendicular longitudinal direction, wherein the outer circumferential region is spaced from a central region of the wafer in the longitudinal direction,
wherein during the trimming step, a beveled portion of the outer circumferential region of the wafer remains after the trimming step whereby the cutting surface exposed has a first surface extending in the longitudinal direction and a second surface extending in the thickness direction, wherein the damage layer comprises a first portion extending in the longitudinal direction and a second portion extending in the thickness direction,
wherein the treatment step comprises removing the second portion of the damage layer extending in the thickness direction.
8. The processing method of claim 7 wherein a portion of the damage layer is removed during the treatment step.
9. The processing method of claim 7 wherein a portion of the damage layer is melted during the treatment step.
10. The processing method of claim 7 further comprising after the treatment step grinding the wafer to thereby thin the wafer.
11. The processing method of claim 10 wherein a beveled portion of the outer circumferential region of the wafer remains after the trimming step, and
wherein grinding the wafer comprises grinding the wafer so as to remove the beveled portion of the outer circumferential region of the wafer that remained after the trimming step.
12. The processing method of claim 11 wherein prior to grinding the wafer, bonding the wafer to a support wafer.
13. The processing method of claim 11 wherein the wafer is bonded to a support wafer in a manner that a side of the wafer from which at least part of the outer circumferential region that has been removed during the trimming step is adjacent to the support wafer and wherein an opposing side of the wafer comprising a beveled portion of the outer circumferential region of the wafer that remains after the trimming step is distal to the support wafer.
14. The processing method of claim 10 wherein prior to grinding the wafer, bonding the wafer to a support wafer.
15. The processing method of claim 10 wherein prior to the trimming step, bonding the wafer to a support wafer.