Granted Patent B2

US 12,288,789 · App. 18/408,223 · Granted Apr 29, 2025

Inventors: Biswajeet Guha (Hillsboro, OR); William Hsu (Hillsboro, OR); Chung-Hsun Lin (Portland, OR); Kinyip Phoa (Beaverton, OR); Oleg Golonzka (Beaverton, OR); Tahir Ghani (Portland, OR); Kalyan Kolluru (Portland, OR); Nathan Jack (Forest Grove, OR); Nicholas Thomson (Hillsboro, OR); Ayan Kar (Portland, OR); Benjamin Orr (Munich, DE)

Assignee: Intel Corporation

H01L27/0886H01L29/0653H01L29/0673H01L29/785

Abstract

Claims (42)

1. An integrated circuit structure, comprising:

a first nanowire above a first fin;

a first gate stack over the first nanowire;

a first pair of epitaxial source or drain structures at first and second ends of the first nanowire, one or both of the first pair of epitaxial source or drain structures directly electrically coupled to the first fin;

a second nanowire above a second fin;

a second gate stack over the second nanowire; and

a second pair of epitaxial source or drain structures at first and second ends of the second nanowire, both of the second pair of epitaxial source or drain structures electrically isolated from the second fin, wherein the second pair of epitaxial source or drain structures has a bottommost surface vertically between a bottommost surface of the and an uppermost surface of the second fin.

2. The integrated circuit structure of claim 1 , wherein the first and second pairs of epitaxial source or drain structures are first and second pairs of non-discrete epitaxial source or drain structures.

3. The integrated circuit structure of claim 1 , wherein the first and second fins each comprises a portion of a bulk silicon substrate.

4. The integrated circuit structure of claim 1 , wherein the first and second nanowires comprise silicon.

5. The integrated circuit structure of claim 4 , wherein the first and second pairs of epitaxial source or drain structures comprise silicon germanium.

6. The integrated circuit structure of claim 1 , wherein the first and second nanowires comprise silicon germanium.

7. The integrated circuit structure of claim 1 , wherein each of the first and second gate stacks comprises a high-k gate dielectric layer and a metal gate electrode.

8. The integrated circuit structure of claim 1 , wherein both of the pair of epitaxial source or drain structures are directly electrically coupled to the first fin, the integrated circuit structure further comprising a trench in the first fin, the trench beneath the first gate stack.

9. The integrated circuit structure of claim 1 , wherein both of the pair of epitaxial source or drain structures are directly electrically coupled to the first fin, the integrated circuit structure further comprising a heavily doped region in the first fin, the heavily doped region beneath the first gate stack.

10. An integrated circuit structure, comprising:

a first nanowire above a first fin;

a first gate stack over the first nanowire;

a first pair of epitaxial source or drain structures at first and second ends of the first nanowire, one of the first pair of epitaxial source or drain structures directly electrically coupled to the first fin, and the other of the first pair of epitaxial source or drain structures electrically isolated from the first fin;

a second nanowire above a second fin;

a second gate stack over the second nanowire; and

a second pair of epitaxial source or drain structures at first and second ends of the second nanowire, both of the second pair of epitaxial source or drain structures electrically isolated from the second fin, wherein the second pair of epitaxial source or drain structures has a bottommost surface vertically between a bottommost surface of the second nanowire and an uppermost surface of the second fin.

11. The integrated circuit structure of claim 10 , wherein the first and second pairs of epitaxial source or drain structures are first and second pairs of non-discrete epitaxial source or drain structures.

12. The integrated circuit structure of claim 10 , wherein the first and second fins each comprises a portion of a bulk silicon substrate.

13. The integrated circuit structure of claim 10 , wherein the first and second nanowire comprise silicon.

14. The integrated circuit structure of claim 13 , wherein the first and second pairs of epitaxial source or drain structures comprise silicon germanium.

15. The integrated circuit structure of claim 10 , wherein the first and second nanowire comprise silicon germanium.

16. The integrated circuit structure of claim 10 , wherein each of the first and second gate stacks comprises a high-k gate dielectric layer and a metal gate electrode.

17. A computing device, comprising:

a board; and

a component coupled to the board, the component including an integrated circuit structure, comprising:

a first nanowire above a first fin;

a first gate stack over the first nanowire;

a first pair of epitaxial source or drain structures at first and second ends of the first nanowire, one or both of the pair of epitaxial source or drain structures directly electrically coupled to the first fin;

a second nanowire above a second fin;

a second gate stack over the second nanowire; and

a second pair of epitaxial source or drain structures at first and second ends of the second nanowire, both of the pair of epitaxial source or drain structures electrically isolated from the second fin, wherein the second pair of epitaxial source or drain structures has a bottommost surface vertically between a bottommost surface of the second nanowire and an uppermost surface of the second fin.

18. The computing device of claim 17 , further comprising:

a memory coupled to the board.

19. The computing device of claim 17 , further comprising:

a communication chip coupled to the board.

20. The computing device of claim 17 , wherein the component is a packaged integrated circuit die.

Continuity (2)

References Cited (13)