IP Library Granted Patent US 12,289,097
Granted Patent B2
US 12,289,097 · App. 17/651,632 · Granted Apr 29, 2025

Acoustic wave filter with overtone mode resonator and fundamental mode resonator

Inventors: Jiansong Liu (Fremont, CA); Kwang Jae Shin (Yongin, KR); Alexandre Augusto Shirakawa (Cardiff by the Sea, CA); Yiliu Wang (Irvine, CA)
Assignee: Skyworks Global Pte. Ltd.
H03H9/568H03F3/19H03H9/13H03H9/205H04B1/40H03F2200/451
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Quick Facts
Patent No.
US 12,289,097
App. No.
17/651,632
Granted
Apr 29, 2025
Kind
B2
Abstract

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

Claims (28)

1. An acoustic wave filter with bulk acoustic wave resonators, the acoustic wave filter comprising:

a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode of the first bulk acoustic wave resonator, the first bulk acoustic wave resonator including a first piezoelectric layer and a second piezoelectric layer, the first piezoelectric layer being stacked with the second piezoelectric layer, and the first piezoelectric layer having a c-axis oriented in a substantially opposite direction than a c-axis of the second piezoelectric layer; and

a second bulk acoustic wave resonator having a fundamental mode as a main mode of the second bulk acoustic wave resonator, the second bulk acoustic wave resonator coupled to the first bulk acoustic wave resonator, and the acoustic wave filter configured to filter a radio frequency signal.

2. The acoustic wave filter of claim 1 wherein the first bulk acoustic wave resonator is a first series resonator from an input/output port of the acoustic wave filter, and the second bulk acoustic wave resonator is coupled to the input/output port of the acoustic wave filter by way of the first bulk acoustic wave resonator.

3. The acoustic wave filter of claim 2 further comprising a third bulk acoustic wave resonator configured to excite the overtone mode as a main mode of the third bulk acoustic wave resonator, the third bulk acoustic wave resonator being a first series resonator from a second input/output port of the acoustic wave filter.

4. The acoustic wave filter of claim 3 further comprising a fourth bulk acoustic wave resonator configured to excite the overtone mode as a main mode of the fourth bulk acoustic wave resonator, the fourth bulk acoustic wave resonator being a first shunt resonator from the second input/output port of the acoustic wave filter.

5. The acoustic wave filter of claim 4 wherein the acoustic wave filter includes a plurality of series bulk acoustic wave resonators coupled in series between the first bulk acoustic wave resonator and the third bulk acoustic wave resonator, each of the plurality of series bulk acoustic wave resonators having the fundamental mode as a respective main mode, and the plurality of series bulk acoustic wave resonators include the second bulk acoustic wave resonator.

6. The acoustic wave filter of claim 1 wherein the first bulk acoustic wave resonator includes a first piezoelectric and electrode stack on a side of a first substrate, the second bulk acoustic wave resonator includes a second piezoelectric and electrode stack on a side of a second substrate, the side of the first substrate faces the side of the second substrate, and the first and second bulk acoustic wave resonators are co-packaged with each other.

7. The acoustic wave filter of claim 6 wherein the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are electrically connected to each other within a package structure.

8. The acoustic wave filter of claim 6 further comprising an integrated passive device co-packaged with the first and second bulk acoustic wave resonators.

9. The acoustic wave filter of claim 8 wherein the integrated passive device is a capacitor.

10. The acoustic wave filter of claim 8 wherein the integrated passive device is an inductor.

11. The acoustic wave filter of claim 8 wherein the integrated passive device is electrically connected to the first bulk acoustic wave resonator.

12. The acoustic wave filter of claim 1 wherein the acoustic wave filter includes fewer bulk acoustic wave resonators with the overtone mode as a respective main mode than bulk acoustic wave resonators with the fundamental mode as a respective main mode.

13. The acoustic wave filter of claim 1 wherein the second bulk acoustic wave resonator includes a single piezoelectric layer.

14. The acoustic wave filter of claim 13 wherein the first and second piezoelectric layers are together at least 1.5 times as thick as the single piezoelectric layer.

15. The acoustic wave filter of claim 13 wherein the first and second piezoelectric layers have a combined thickness in a range from 0.2 micrometer to 5 micrometers.

16. The acoustic wave filter of claim 1 wherein a resonant frequency of the overtone mode of the first bulk acoustic wave resonator is in a range from 5 gigahertz to 12 gigahertz.

17. The acoustic wave filter of claim 1 wherein the acoustic wave filter is a band pass filter having a passband corresponding to a fifth generation New Radio operating band.

18. The acoustic wave filter of claim 1 wherein the overtone mode is a second overtone mode.

19. A radio frequency module comprising:

an acoustic wave filter including a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode of the first bulk acoustic wave resonator and a second bulk acoustic wave resonator having a fundamental mode as a main mode of the second bulk acoustic wave resonator, the first bulk acoustic wave resonator including a first piezoelectric layer and a second piezoelectric layer, the first piezoelectric layer being stacked with the second piezoelectric layer, and the first piezoelectric layer having a c-axis oriented in a substantially opposite direction than a c-axis of the second piezoelectric layer; and

a radio frequency circuit element coupled to the acoustic wave filter, the acoustic wave filter and the radio frequency circuit element being enclosed within a common package.

20. A wireless communication device comprising:

an acoustic wave filter including a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode of the first bulk acoustic wave resonator and a second bulk acoustic wave resonator having a fundamental mode as a main mode of the second bulk acoustic wave resonator, the first bulk acoustic wave resonator including a first piezoelectric layer and a second piezoelectric layer, the first piezoelectric layer being stacked with the second piezoelectric layer, and the first piezoelectric layer having a c-axis oriented in a substantially opposite direction than a c-axis of the second piezoelectric layer;

an antenna operatively coupled to the acoustic wave filter;

a radio frequency amplifier operatively coupled to the acoustic wave filter and configured to amplify a radio frequency signal; and

a transceiver in communication with the radio frequency amplifier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2023
From: LIU, JIANSONG; SHIN, KWANG JAE; SHIRAKAWA, ALEXANDRE AUGUSTO; WANG, YILIU
To: SKYWORKS GLOBAL PTE. LTD.
Reel/Frame 062910/0733 →
Continuity (3)
Provisional Application 63168501 · Mar 31, 2021
Provisional Application 63168568 · Mar 31, 2021
Related Publication 20220321101A1 · Oct 6, 2022
References Cited (17)
US 6888424B2 · Takeuchi et al. · 2005 [cited by applicant]
US 7267009B2 · Liu · 2007 [cited by examiner]
US 7561010B2 · Hikita et al. · 2009 [cited by applicant]
US 7719388B2 · Schmidhammer · 2010 [cited by applicant]
US 9679765B2 · Larson, III et al. · 2017 [cited by applicant]
US 9941857B1 · Olsson · 2018 [cited by examiner]
US 20220321095A1 · Liu et al. · 2022 [cited by applicant]
US 20220321100A1 · Liu et al. · 2022 [cited by applicant]
JP 3860695 · 2006 [cited by applicant]
JP 2009027554A · 2009 [cited by examiner]
JP 4784815 · 2011 [cited by applicant]
WO WO2021062421A1 · 2021 [cited by examiner]
Aigner et al., “Pushing BAW beyond ‘known’ frontiers: Higher, wider, smaller, cooler”, Mar. 2018. [cited by applicant]
Ballandras et al., “High overtone bulk acoustic resonators: application to resonators, filters and sensors”, Proceedings of the Acoustics 2012 Nantes Conference, pp. 3112-3117, Apr. 2012. [cited by applicant]
Larson et al., “Characterization of reversed c-axis AIN thin films”, Oct. 2010. [cited by applicant]
Pijolat et al., “Mode conversion in high overtone bulk acoustic wave resonators”, IEEE Conference Paper May 2009. [cited by applicant]
Plessky et al., “Laterally excited bulk wave resonators (XBARs) based on thin lithium niobate platelet for 5GHz and 13 GHz filters”, IEEE/MTT-S International Microwave Symposium, pp. 512-515, 2019. [cited by applicant]
Cited By (3)
US 12,647,086 US 12,712,522 US 12,744,513