Bulk acoustic wave resonator and capacitor with silicon support
An acoustic wave device is provided comprising a substrate and at least one resonator structure of a first type and at least one resonator structure of a second type mounted on the substrate. The resonator structures of the first type are configured to operate as capacitors and have a first thickness, causing the resonator structures to have a first passband frequency range. The resonator structures of the second type have a second thickness that is different from the first thickness, causing the resonator structures to have a second passband frequency range. A method for forming such an acoustic wave device is also provided. A die comprising such an acoustic wave device, a filter comprising such an acoustic wave device, a radio-frequency module comprising such an acoustic wave device, and a wireless mobile device comprising such an acoustic wave device are also provided.
1 . An acoustic wave device comprising:
a substrate; and
at least one resonator structure of a first type and at least one resonator structure of a second type mounted on the substrate, each of the resonator structures of the first and second types including a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being located between the first electrode and the second electrode, the second electrode being located between the piezoelectric layer and the substrate,
the resonator structures of the first type being configured to operate as capacitors and having a first thickness, causing the resonator structures of the first type to have a first passband frequency range between a first resonant frequency, f s1 , and a first anti-resonant frequency, f p1 , and
the resonator structures of the second type having a second thickness that is different from the first thickness, causing the resonator structures of the second type to have a second passband frequency range between a second resonant frequency, f s2 , and a second anti-resonant frequency, f p2 .
2 . The acoustic wave device of claim 1 wherein the first and second passband frequency ranges are non-overlapping with each other.
3 . The acoustic wave device of claim 1 wherein one of the first electrodes of the resonator structures of the first type and the first electrodes of the resonator structures of the second type have different thicknesses or the second electrodes of the resonator structures of the first type and the second electrodes of the resonator structures of the second type have different thicknesses.
4 . The acoustic wave device of claim 1 wherein the first anti-resonant frequency, f p1 is smaller than the second resonant frequency, f s2 .
5 . The acoustic wave device of claim 4 wherein the first anti-resonant frequency, f p1 and the second resonant frequency, f s2 , are separated by an amount such that at least one resonance originating from the resonator structures of the first type is minimized in the second passband frequency.
6 . The acoustic wave device of claim 4 wherein the first anti-resonant frequency, f p1 and the second resonant frequency, f s2 , are separated by one of at least f p1 -f s1 or at least f p2 -f s2 .
7 . The acoustic wave device of claim 1 further comprising an air cavity located between the substrate and each of the resonator structures of the first type, and at least one support member supporting each of the resonator structures of the first type, the support members being located in the air cavities.
8 . The acoustic wave device of claim 7 wherein the substrate has a portion having a first thickness, T 1 , and a portion having a second thickness, T 2 , the second thickness being greater than the first thickness, to define the air cavity, at least one of the support members being located on the portion of the substrate having the first thickness, T 1 .
9 . The acoustic wave device of claim 8 wherein the second thickness, T 2 , of the substrate is equal to T 2 =T 1 +T s , T s being a height of one of the support members.
10 . The acoustic wave device of claim 8 wherein at least a portion of at least one of the resonator structures of the first type is supported by the portion of the substrate having the second thickness, T 2 .
11 . The acoustic wave device of claim 7 wherein at least one of the support members is located entirely within the air cavity.
12 . The acoustic wave device of claim 7 wherein at least one of the support members is approximately in a form of one of a cuboid, a cube, a cylinder, an elliptic cylinder, a prism, or a ring.
13 . The acoustic wave device of claim 7 wherein the first and/or second electrode of at least one of the resonator structures of the first type has a reduced thickness over portions of the resonator structures of the first type supported by the at least one support member.
14 . The acoustic wave device of claim 7 wherein the piezoelectric layer of at least one of the resonator structures of the first type is not covered by the first and/or second electrode(s) over portions of the resonator structures of the first type supported by the at least one support member.
15 . The acoustic wave device of claim 7 wherein at least one of the resonator structures of the first type includes at least one frame structure having at least one frame disposed along an edge of at least one of the resonator structures of the first type.
16 . The acoustic wave device of claim 7 wherein at least one of the resonator structures of the first type includes at least one frame structure having at least one frame disposed between one or more of the support members and at least one of the resonator structures of the first type.
17 . The acoustic wave device of claim 1 wherein each of the first and/or second electrodes of at least one of the resonator structures of the first type includes a first metal layer and at least one additional metal layer adjacent to the first metal layer, thereby lowering a resonant frequency of the acoustic wave device.
18 . The acoustic wave device of claim 1 wherein the acoustic wave device is a bulk acoustic wave (BAW) device.
19 . A filter including one or more acoustic wave devices, each acoustic wave device comprising:
a substrate; and
at least one resonator structure of a first type and at least one resonator structure of a second type mounted on the substrate, each of the resonator structures of the first and second types including a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being located between the first electrode and the second electrode, and the second electrode being located between the piezoelectric layer and the substrate,
the resonator structures of the first type being configured to operate as capacitors and having a first thickness causing the resonator structures of the first type to have a first passband frequency range between a first resonant frequency, f s1 , and a first anti-resonant frequency, f p1 , and
the resonator structures of the second type having a second thickness that is different from the first thickness, causing the resonator structures of the second type to have a second passband frequency range between a second resonant frequency, f s2 , and a second anti-resonant frequency, f p2 .
20 . A radio-frequency module including a packaging substrate configured to receive a plurality of devices and a die mounted on the packaging substrate, the die including an acoustic wave device, the acoustic wave device comprising:
a substrate; and
at least one resonator structure of a first type and at least one resonator structure of a second type mounted on the substrate, each of the resonator structures of the first and second types having a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being located between the first electrode and the second electrode, and the second electrode being located between the piezoelectric layer and the substrate,
the resonator structures of the first type being configured to operate as capacitors and having a first thickness causing the resonator structures of the first type to have a first passband frequency range between a first resonant frequency, f s1 , and a first anti-resonant frequency, f p1 , and
the resonator structures of the second type having a second thickness that is different from the first thickness, causing the resonator structures of the second type to have a second passband frequency range between a second resonant frequency, f s2 , and a second anti-resonant frequency, f p2 .