Photoelectric conversion device and sensor and electronic device
Disclosed are a photoelectric conversion device includes a first electrode and a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and an organic buffer layer between the first electrode and the photoelectric conversion layer, the organic buffer layer including an organic buffer material, wherein a difference between a LUMO energy level of the organic buffer material and a LUMO energy level of the n-type semiconductor is greater than or equal to about 1.2 eV and the organic buffer material includes at least three carbazole moieties, and a sensor, and an electronic device including the same.
1. A photoelectric conversion device, comprising
a first electrode and a second electrode;
a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer comprising a p-type semiconductor and an n-type semiconductor; and
an organic buffer layer between the first electrode and the photoelectric conversion layer, the organic buffer layer comprising an organic buffer material, wherein
the organic buffer material is represented by Chemical Formula 1,
wherein, in Chemical Formula 1,
L 1 to L 3 are independently a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group or a substituted or unsubstituted naphthylene group,
R 1 to R 7 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, a substituted or unsubstituted carbazolyl group, a halogen, a cyano group, or a combination thereof,
R 1 is different than R 2 ,
at least two of R 1 to R 3 are a substituted or unsubstituted carbazolyl group, and
m 1 to m 3 are independently 0 or 1.
2. The photoelectric conversion device of claim 1 , wherein
the LUMO energy level of the organic buffer material is about 1.2 eV to about 3.0 eV, and
the LUMO energy of the n-type semiconductor is about 3.6 eV to about 4.8 eV.
3. The photoelectric conversion device of claim 1 , wherein a difference between a HOMO energy level of the organic buffer material and a HOMO energy level of the p-type semiconductor is less than or equal to about 0.5 eV.
4. The photoelectric conversion device of claim 3 , wherein the HOMO energy level of the organic buffer material and the HOMO energy level of the p-type semiconductor is within about 5.0 eV to about 6.0 eV.
5. The photoelectric conversion device of claim 3 , wherein
a difference between the HOMO energy level of the organic buffer material and the HOMO energy level of the p-type semiconductor is about 0 eV to about 0.5 eV, and
a difference between the LUMO energy level of the organic buffer material and the LUMO energy level of the n-type semiconductor is about 1.2 eV to about 3.6 eV.
6. The photoelectric conversion device of claim 1 , wherein a difference between a LUMO energy level of the organic buffer material and a LUMO energy level of the n-type semiconductor being greater than or equal to about 1.2 eV.
7. The photoelectric conversion device of claim 1 ,
wherein the organic buffer material is represented by one of Chemical Formulae 1A to 1C,
wherein, in Chemical Formulae 1A to 1C,
L 1 to L 3 are independently a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group or a substituted or unsubstituted naphthylene group,
R 1 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a halogen, a cyano group, or a combination thereof,
R 4 to R 17 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, a substituted or unsubstituted carbazolyl group, a halogen, a cyano group, or a combination thereof, and
m 1 to m 3 are independently 0 or 1.
8. The photoelectric conversion device of claim 7 , wherein R 1 and R 4 to R 17 are independently hydrogen, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group or a substituted or unsubstituted naphthyl group.
9. The photoelectric conversion device of claim 7 , wherein three of R 1 , R 4 to R 17 and L 1 to L 3 are a substituted or unsubstituted phenyl group or a substituted or unsubstituted phenylene group.
10. The photoelectric conversion device of claim 1 , wherein the organic buffer material is represented by one of Chemical Formulae 1D to 1G,
wherein, in Chemical Formulae 1D to 1G,
L 1 to L 3 are independently a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group or a substituted or unsubstituted naphthylene group,
R 4 to R 17 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, a substituted or unsubstituted carbazolyl group, a halogen, a cyano group, or a combination thereof,
R 2 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a halogen, a cyano group, or a combination thereof, and
m 1 to m 3 are independently 0 or 1.
11. The photoelectric conversion device of claim 10 , wherein R 2 and R 4 to R 17 are independently hydrogen, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, or a substituted or unsubstituted naphthyl group.
12. The photoelectric conversion device of claim 10 , wherein three of R 2 , R 4 to R 17 and L 1 to L 3 are a substituted or unsubstituted phenyl group or a substituted or unsubstituted phenylene group.
13. The photoelectric conversion device of claim 1 , wherein
i) R 1 and R 3 are a substituted or unsubstituted carbazolyl group, and
R 2 is hydrogen, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, or a substituted or unsubstituted naphthyl group, or
ii) R 2 and R 3 are a substituted or unsubstituted carbazolyl group, and
R 1 is hydrogen, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, or a substituted or unsubstituted naphthyl group.
14. The photoelectric conversion device of claim 1 , wherein the organic buffer material comprises three carbazole moieties and three phenyl moieties.
15. The photoelectric conversion device of claim 1 , wherein the organic buffer material is represented by one of Chemical Formulae 1-1 to 1-4:
wherein, in Chemical Formulae 1-1 to 1-4,
L 1 to L 3 are independently a phenylene group,
m 1 to m 3 are independently 0 or 1, and
R 1 to R 3 are independently a carbazolyl group or a phenyl-substituted carbazolyl group.
16. The photoelectric conversion device of claim 15 , wherein
R 1 to R 3 are independently one of the groups listed in Group 1,
wherein, in Group 1, * is a linking point.
17. The photoelectric conversion device of claim 15 , wherein the organic buffer material is represented by Chemical Formula 1-2-1 or 1-3-1:
wherein, in Chemical Formulae 1-2-1 or 1-3-1,
R 8 and R 12 are independently hydrogen or a phenyl group.
18. The photoelectric conversion device of claim 1 , wherein
the p-type semiconductor, the n-type semiconductor, or both the p-type semiconductor and the n-type semiconductor independently is a light-absorbing material having a maximum absorption wavelength in one of a red wavelength region, a green wavelength region, a blue wavelength region, and an infra-red wavelength region.
19. A sensor comprising:
the photoelectric conversion device of claim 1 .
20. An electronic device comprising:
the sensor of claim 19 .
21. The sensor of claim 19 , wherein
the sensor is an organic CMOS image sensor.
22. An electronic device comprising:
the photoelectric conversion device of claim 1 .
23. A photoelectric conversion device, comprising
a photoelectric conversion layer comprising a light-absorbing material, the photoelectric conversion layer being configured to convert light absorbed by the light-absorbing material into an electrical signal, and
an organic buffer layer adjacent to the photoelectric conversion layer, the organic buffer layer comprising an organic buffer material,
an absorption spectrum of the photoelectric conversion layer having a maximum absorption wavelength in one of a red wavelength region, a green wavelength region, a blue wavelength region, and an infra-red wavelength region,
the organic buffer material is represented by Chemical Formula 1,
wherein, in Chemical Formula 1,
L 1 to L 3 are independently a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group or a substituted or unsubstituted naphthylene group,
R 1 to R 7 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, a substituted or unsubstituted carbazolyl group, a halogen, a cyano group, or a combination thereof,
R 1 is different than R 2 ,
provided that two of R 1 to R 3 are a substituted or unsubstituted carbazolyl group, and
m1 to m3 are independently 0 or 1.
24. The photoelectric conversion device of claim 23 , wherein the organic buffer material comprises three carbazole moieties and three phenyl moieties.
25. A photoelectric conversion device, comprising
a first electrode;
a second electrode on the first electrode;
a photoelectric conversion layer between the first electrode and the second electrode; and
an organic buffer layer between the first electrode and the photoelectric conversion layer, the organic buffer layer including an organic buffer material represented by Chemical Formula 1,
wherein, in Chemical Formula 1,
L 1 to L 3 are independently a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group or a substituted or unsubstituted naphthylene group,
R 1 to R 7 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, a substituted or unsubstituted carbazolyl group, a halogen, a cyano group, or a combination thereof,
m 1 to m 3 are independently 0 or 1,
provided that two of R 1 to R 3 are a substituted or unsubstituted carbazolyl group, and a remaining one of R 1 to R 3 is hydrogen, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, or a substituted or unsubstituted naphthyl group.
26. The photoelectric conversion device of claim 25 , wherein
the organic buffer material has a LUMO energy level in a range of about 1.2 eV to about 3.0 eV and a HOMO energy level of about 5.0 eV to about 6.0 eV,
the photoelectric conversion layer includes a p-type semiconductor and an n-type semiconductor,
the LUMO energy of the n-type semiconductor is about 3.6 eV to about 4.8 eV, and
the HOMO energy level of the p-type semiconductor is about 5.0 eV to about 6.0 eV.
27. A sensor comprising:
the photoelectric conversion device of claim 25 .
28. An electronic device comprising:
the sensor of claim 27 .
29. The photoelectric conversion device of claim 23 ,
wherein R 1 and R 4 to R 7 are independently hydrogen, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group or a substituted or unsubstituted naphthyl group.
30. The photoelectric conversion device of claim 23 , wherein three of R 1 , R 4 to R 7 and L 1 to L 3 are a substituted or unsubstituted phenyl group-or a substituted or unsubstituted phenylene group.
31. A photoelectric conversion device, comprising
a photoelectric conversion layer comprising a light-absorbing material, the photoelectric conversion layer being configured to convert light absorbed by the light-absorbing material into an electrical signal, and
an organic buffer layer adjacent to the photoelectric conversion layer, the organic buffer layer comprising an organic buffer material,
an absorption spectrum of the photoelectric conversion layer having a maximum absorption wavelength in one of a red wavelength region, a green wavelength region, a blue wavelength region, and an infra-red wavelength region,
the organic buffer material is represented by Chemical Formula 1A,
wherein, in Chemical Formula 1A,
L 1 to L 3 are independently a substituted or unsubstituted C6 to C20 arylene group,
R 1 and R 4 to R 15 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C3 to C20 heteroaryl group, a substituted or unsubstituted carbazolyl group, a halogen, a cyano group, or a combination thereof, and
m 1 to m 3 are independently 0 or 1.