System and method for removing impurities during chemical mechanical planarization
A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.
1. A method, comprising:
holding a semiconductor substrate with a chemical mechanical planarization head positioned above a rotating chemical mechanical planarization pad;
performing a chemical mechanical planarization process by placing the semiconductor substrate in contact with the chemical mechanical planarization pad while the chemical mechanical planarization head holds the semiconductor substrate;
conditioning the chemical mechanical planarization pad with a pad conditioner during the chemical mechanical planarization process;
supplying a slurry onto the chemical mechanical planarization pad during the chemical mechanical planarization process with a slurry supply system; and
removing debris from the slurry by performing a charged particle separation process, the charged particle separation process including:
positioning a first electrode and a second electrode in the slurry above the rotating chemical mechanical planarization pad, the first electrode and the second electrode being separate from the chemical mechanical planarization head and the pad conditioner, wherein the first and second electrodes are laterally spaced apart from the chemical mechanical planarization head, wherein the slurry flows between the first and second electrodes during the chemical mechanical planarization process; and
applying a voltage between the first electrode and the second electrode.
2. The method of claim 1 , further comprising orienting the first electrode and the second electrode in flow-by orientation.
3. The method of claim 1 , further comprising orienting the first electrode and the second electrode in flow-through orientation.
4. The method of claim 1 , wherein performing the charged particle separation process includes driving a constant current between the first electrode and the second electrode.
5. The method of claim 1 , wherein performing the charged particle separation process includes applying a constant voltage between the first electrode and the second electrode.
6. The method of claim 1 , wherein the first electrode, the second electrode, the pad conditioner and the chemical mechanical planarization head are substantially coplanar during the charged particle separation process.
7. The method of claim 1 , comprising performing a cleaning process on the substrate with a cleaning fluid and third and fourth electrodes after the chemical mechanical planarization process.
8. The method of claim 7 , wherein the cleaning fluid is a cleaning chemical, the cleaning process including spraying the cleaning fluid onto the substrate with a spray bar, wherein the third and fourth electrodes are positioned adjacent to the spray bar.
9. The method of claim 8 , wherein the cleaning process includes cleaning the substrate with a roller brush, wherein the first and second electrodes are positioned adjacent to the roller brush.
10. The method of claim 9 , comprising drying the substrate with a vapor.
11. The method of claim 1 , wherein the first electrode and the second electrode each include a plurality of apertures configured to allow the slurry to flow through the first electrode and the second electrode.
12. A method, comprising:
holding a substrate with a chemical mechanical planarization head positioned above a rotating chemical mechanical planarization pad;
performing a chemical mechanical planarization process on a substrate by placing the substrate in contact with the chemical mechanical planarization pad while the chemical mechanical planarization head holds the semiconductor substrate;
supplying a slurry onto the chemical mechanical planarization pad during the chemical mechanical planarization process with a slurry supply system;
positioning a first electrode and a second electrode in the slurry above the rotating chemical mechanical planarization pad during the chemical mechanical planarization, the first electrode and the second electrode being separate from the chemical mechanical planarization head, wherein the first and second electrodes are laterally spaced apart from the chemical mechanical planarization head, wherein the slurry flows between the first and second electrodes during the chemical mechanical planarization process;
applying a voltage between a first electrode and a second electrode during the chemical mechanical planarization related process; and
adsorbing, with the first and second electrodes, charged impurities from the slurry involved in the chemical mechanical planarization related process.
13. The method of claim 12 , comprising performing a substrate cleaning process.
14. A method, comprising:
performing, while holding a substrate with a chemical mechanical planarization head, a chemical mechanical planarization process on the substrate including supplying a slurry onto a chemical mechanical planarization pad;
positioning a first electrode and a second electrode of an impurity removal system adjacent to and above the chemical mechanical planarization pad while supplying the slurry, the first and second electrode being separate from the chemical mechanical planarization head; and
removing charged impurities from the slurry with the impurity removal system by applying a voltage between the first electrode and the second electrode with a power source; and
performing a cleaning process on the substrate with a cleaning fluid and third and fourth electrodes after the chemical mechanical planarization process, wherein the fluid is a cleaning chemical, the cleaning process including spraying the cleaning fluid onto the substrate with a spray bar and cleaning the substrate with a roller brush, wherein the first and second electrodes are positioned adjacent to the roller brush, wherein the third and fourth electrodes are positioned adjacent to the spray bar, wherein the first and second electrodes are positioned adjacent to the roller brush.
15. The method of claim 14 , wherein the first and second electrodes are configured to adsorb the charged impurities from the slurry.
16. The method of claim 14 , comprising performing a cleaning process on the substrate with a cleaning fluid and third and fourth electrodes after the chemical mechanical planarization process.
17. The method of claim 16 , wherein the cleaning process includes submerging the substrate in a cleaning tank filled with the cleaning fluid.
18. The method of claim 17 , wherein the cleaning fluid is isopropyl alcohol.
19. The method of claim 14 , comprising drying the substrate with a vapor.
20. The method of claim 14 , wherein the first electrode and the second electrode are positioned in a flow-through orientation.
21. The method of claim 14 , wherein the first electrode and the second electrode are positioned in a flow-by orientation.