High frequency ultrasonic transducer and method of fabrication
An ultrasonic transducer that includes a delay line, a piezoelectric element, and a metal conductive layer between the delay line and the piezoelectric element. The delay line and the piezoelectric element are acoustically joined with an atomic diffusion bond to facilitate coupling ultrasonic waves from the piezoelectric element into the delay line or from the delay line into the piezoelectric element.
1. An ultrasonic transducer comprising: a delay line; a piezoelectric element; an interposing metal conductive layer between the delay line and the piezoelectric element; and an atomic diffusion bond joining the delay line and the piezoelectric element to facilitate coupling ultrasonic waves from the piezoelectric element into the delay line or from the delay line into the piezoelectric element, the atomic diffusion bond extending continuously across an entire surface of the piezoelectric element that overlaps the delay line, the atomic diffusion bond created at room temperature being free from thermal bonding stress.
2. The ultrasonic transducer of claim 1 wherein the delay line is made from glass containing the elements of silicon or fluorine.
3. The ultrasonic transducer of claim 1 wherein the delay line includes at least one from a group consisting of fused silica, fused quartz, and single crystal silicon.
4. The ultrasonic transducer of claim 1 wherein the piezoelectric element is made from a piezoelectric crystalline material.
5. The ultrasonic transducer of claim 1 wherein the piezoelectric element is made from a piezoelectric ceramic material.
6. The ultrasonic transducer of claim 1 wherein the piezoelectric element includes at least one from a group consisting of: LiNbO3, LilO3, PZT, BaTiO3, ZnO, AlN, and Quartz.
7. The ultrasonic transducer of claim 1 wherein the interposing metal conductive layer includes at least one from a group consisting of: Cu, Al, Ti, Ta, Au, Ag, Ni, Fe, and Pt.
8. The ultrasonic transducer of claim 1 , wherein the interposing metal conductive layer comprises a first thin metal layer deposited on the delay line and a second thin metal layer deposited on the piezoelectric element, the first thin metal layer and the second thin metal layer joined by the atomic diffusion bond.
9. The ultrasonic transducer of claim 1 , wherein the interposing metal conductive layer comprises a thin metal layer deposited on one of the delay line and the piezoelectric element, and the thin metal layer is joined by the atomic diffusion bond with the other of the delay line and the piezoelectric element.
10. A method of producing an ultrasonic transducer, the method comprising the steps of: providing a delay line substrate material; providing a piezoelectric substrate material as a transducer element; depositing a first metal conductive layer on the delay line substrate material; depositing a second metal conductive layer on and across an entire surface of the piezoelectric substrate material; forming an atomic diffusion bond at room temperature between the first metal conductive layer and the second metal conductive layer, the atomic diffusion bond extending continuously across an entire surface of the piezoelectric substrate material that overlaps the delay line substrate; patterning removal of a portion of the piezoelectric substrate material to expose at least one of the first metal conductive layer and the second metal conductive layer to allow electrical contact; depositing a first patterned electrode on the exposed at least one of the first metal conductive layer and the second metal conductive layer to allow external electrical connection to the exposed at least one of the first metal conductive layer and the second metal conductive layer; and depositing a second patterned electrode on the piezoelectric substrate material to form an active area of the ultrasonic transducer and to allow external electrical connection to be made.
11. The ultrasonic transducer of claim 10 wherein the delay line is made from glass containing the elements of silicon or fluorine.
12. The ultrasonic transducer of claim 10 wherein the delay line includes at least one from a group consisting of fused silica, fused quartz, and single crystal silicon.
13. The ultrasonic transducer of claim 10 wherein the piezoelectric element is made from a piezoelectric crystalline material.
14. The ultrasonic transducer of claim 10 wherein the piezoelectric element is made from a piezoelectric ceramic material.
15. The ultrasonic transducer of claim 10 wherein the piezoelectric element includes at least one from a group consisting of: LiNbO3, LilO3, PZT, BaTiO3, ZnO, AlN, and Quartz.
16. The ultrasonic transducer of claim 10 wherein the first metal conductive layer and the second metal conductive layer includes at least one from a group consisting of: Cu, Al, Ti, Ta, Au, Ag, Ni, Fe, and Pt.
17. A method of producing an ultrasonic transducer, the method comprising the steps of: providing a delay line substrate; providing a piezoelectric substrate as transducer element; depositing a metal conductive layer on one of the delay line substrate and the piezoelectric substrate; forming an atomic diffusion bond at room temperature between the metal conductive layer deposited on the one of the delay line substrate and the piezoelectric substrate and the other of the delay line substrate and the piezoelectric substrate, the atomic diffusion bond extending continuously across an entire surface of the piezoelectric substrate material that overlaps the delay line substrate; patterning removal of a portion of piezoelectric substrate to expose the metal conductive layer to allow electrical contact; depositing a first patterned electrode on the exposed metal conductive layer to allow external electrical connection to the exposed metal conductive layer; and depositing a second patterned electrode on the piezoelectric substrate to form an active area of the ultrasonic transducer and to allow external electrical connection to be made.
18. The ultrasonic transducer of claim 1 , wherein at least one of the delay line and the piezoelectric element has a bonding surface with a roughness less than 10 Angstroms root mean square.
19. The ultrasonic transducer of claim 1 , wherein at least one of the delay line and the piezoelectric element has a bonding surface flatness better than wave at 633 nm.
20. The ultrasonic transducer of claim 1 , wherein the interposing metal conductive layer is exposed where a portion of the piezoelectric element has been removed.
21. The ultrasonic transducer of claim 1 , wherein the interposing metal conductive layer has a thickness between 10 nanometers and 100 nanometers.
22. An ultrasonic transducer comprising: a delay line; a piezoelectric element, at least one of the delay line and the piezoelectric element having a bonding surface with a roughness less than 10 Angstroms root mean square; an interposing metal conductive layer between the delay line and the piezoelectric element; and an atomic diffusion bond joining the delay line and the piezoelectric element to facilitate coupling ultrasonic waves from the piezoelectric element into the delay line or from the delay line into the piezoelectric element, the atomic diffusion bond extending continuously across an entire surface of the piezoelectric element that overlaps the delay line.
23. An ultrasonic transducer comprising: a delay line; a piezoelectric element, at least one of the delay line and the piezoelectric element having a bonding surface flatness better than wave at 633 nm; an interposing metal conductive layer between the delay line and the piezoelectric element; and an atomic diffusion bond joining the delay line and the piezoelectric element to facilitate coupling ultrasonic waves from the piezoelectric element into the delay line or from the delay line into the piezoelectric element, the atomic diffusion bond extending continuously across an entire surface of the piezoelectric element that overlaps the delay line.