Reduced area standard cell abutment configurations

1. A method of designing a semiconductor device, the method comprising:

analyzing a first abutment between a first standard cell block and a second cell block and, in response to identifying a topographic mismatch in one or more of a cell height, a line width, or a line spacing between the first standard cell block and the second cell block:

selecting a first modified cell block that reduces the topographic mismatch;

wherein the first modified cell block comprises a first abutment region having a continuous active region along a first axis parallel to an edge of the first abutment; and

replacing the first standard cell block with the first modified cell block to obtain a first modified layout design having a second abutment.

2. The method of designing a semiconductor device according to claim 1 , further comprising:

selecting the second cell block from a library of standard cell blocks.

3. The method of designing a semiconductor device according to claim 1 , further comprising:

selecting a second modified cell block that reduces the topographic mismatch and a first spacing between the first modified cell block and the second cell block, the second modified cell block comprising a second abutment region having a continuous active region along a second axis parallel to the edge of the first abutment; and

replacing the second cell block with the second modified cell block to obtain a second modified layout design having a third abutment.

4. The method of designing a semiconductor device according to claim 1 , wherein

selecting the first modified cell block comprises selecting the first modified cell block that comprises a second active region parallel to and inward from the continuous active region.

5. The method of designing a semiconductor device according to claim 1 , wherein

selecting the first modified cell block comprises selecting the first modified cell block that comprises a plurality of active regions parallel to and inward from the continuous active region.

6. The method of designing a semiconductor device according to claim 5 , wherein selecting the first modified cell block comprises selecting the first modified cell block that comprises:

a first discontinuous active region having an average active region length of L 1 ; and

a second discontinuous active region arranged inwardly from the first discontinuous active region and having an average active region length of L 2 , wherein L 1 ≠L 2 .

7. The method of designing a semiconductor device according to claim 5 , wherein selecting the first modified cell block comprises selecting the first modified cell block wherein at least one of the plurality of active regions is continuous.

8. The method of designing a semiconductor device according to claim 1 , further comprising:

analyzing the second abutment between the first modified cell block and the second cell block and, in response to identifying a topographical mismatch between the first modified cell block and the second cell block:

selecting a second modified cell block that reduces the topographical mismatch, the second modified cell block comprising a second abutment region having a continuous active region along a second axis parallel to the edge of the second abutment; and

replacing the first modified cell block with the second modified cell block to obtain a second modified layout design having a third abutment.

9. The method of designing a semiconductor device according to claim 1 , further comprising:

retrieving the first modified cell block from a cell block library; and

generating a tape out of a semiconductor device design layout including the first modified cell block for manufacture of the semiconductor device.

10. The method of designing a semiconductor device according to claim 1 , further comprising:

analyzing a layout design file for a horizontal abutment between the first standard cell block and a third cell block and, in response to identifying a second mismatch between the first standard cell block and the third cell block:

incorporating a second modified cell block to reduce the second mismatch,

wherein the second modified cell block includes a horizontal transition region having a plurality of conductive structures arranged perpendicular to a second axis parallel to an edge of the horizontal abutment.

11. The method of designing a semiconductor device according to claim 1 , further comprising:

selecting a first modified abutment region that reduces the topographical mismatch, the first modified abutment region comprising a continuous active region along a first axis parallel to an abutment edge; and

replacing the first abutment region with the first modified abutment region to obtain the first modified layout design.

12. A semiconductor device comprising:

a first modified cell block having a first modified vertical abutment region and a first modified horizontal abutment region, wherein the first modified vertical abutment region comprises a continuous active region along a first axis parallel to a vertical abutment edge;

a second cell block having a second vertical abutment region, wherein the first modified cell block and the second cell block form a vertical abutment, and the first modified vertical abutment region is positioned directly adjacent the second vertical abutment region; and

a third cell block having a second horizontal abutment region, wherein the first modified cell block and the third cell block form a horizontal abutment arranged perpendicular to the first modified vertical abutment region.

13. The semiconductor device according to claim 12 , wherein:

the second cell block comprises a second modified cell block; and

the second modified cell block includes a second modified abutment region having a second continuous active region along a second axis parallel to the vertical abutment edge.

14. The semiconductor device according to claim 12 , wherein:

the first modified vertical abutment region comprises a second active region parallel to and farther from the vertical abutment edge than the continuous active region.

15. The semiconductor device according to claim 14 , wherein:

the first modified vertical abutment region comprises a first plurality of active regions parallel to and inward from the continuous active region.

16. The semiconductor device according to claim 15 , wherein:

each of the first plurality of active regions arranged parallel comprises:

a first discontinuous active region having an average active region length of L 1 ; and

a second discontinuous active region arranged inwardly from the first discontinuous active region and having an average active region length of L 2 .

17. The semiconductor device according to claim 14 , wherein:

the second active region is continuous.

18. The semiconductor device according to claim 16 , wherein:

L 1 >L 2 .

19. The semiconductor device according to claim 12 , further comprising:

a transition region perpendicular to the vertical abutment edge, the transition region comprising a plurality of conductive elements parallel to one another.

20. A semiconductor device comprising:

a first modified cell block having a first modified vertical abutment region and a first modified horizontal abutment region,

wherein the first modified vertical abutment region comprises an active region along a first axis; and

wherein the first modified horizontal abutment region comprises a continuous active region along a second axis perpendicular to the first axis;

a second cell block having a second vertical abutment region,

wherein the first modified cell block and the second cell block are arranged to form a vertical abutment, and

wherein the first modified vertical abutment region is positioned directly adjacent the second vertical abutment region; and

a third modified cell block having a second modified horizontal abutment region;

wherein the first modified cell block and the third modified cell block are arranged with the first modified horizontal abutment region positioned directly adjacent the second modified horizontal abutment region.