Photoresist composition and method of forming photoresist pattern
A method of forming a photoresist pattern includes forming an upper layer including a floating additive polymer over a photoresist layer formed on a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the upper layer is removed. The floating additive polymer is a siloxane polymer.
1. A method of forming a photoresist pattern, comprising:
forming a single photoresist layer over a substrate without forming a silicon-containing layer between the single photoresist layer and the substrate;
forming an upper layer including a siloxane polymer over the single photoresist layer;
heating the single photoresist layer before forming the upper layer;
selectively exposing the upper layer and the single photoresist layer to actinic radiation;
developing the single photoresist layer to form a pattern in the single photoresist layer; and
removing the upper layer,
wherein the single photoresist layer contains another polymer and one or more photoactive compounds, and the another polymer has a hydrocarbon structure as a skeletal backbone, and
wherein the siloxane polymer consists of monomers represented by
where R1, R2, R3, and R4 are same or different, and are a C1 to C6 alkyl group, or a fluorine substituted C1 to C6 alkyl group.
2. The method according to claim 1 , wherein the single photoresist layer includes metal oxide nanoparticles.
3. The method according to claim 1 , further comprising heating the single photoresist layer and upper layer after selectively exposing the single photoresist layer.
4. The method according to claim 1 , wherein the upper layer contains at least 5 wt. % of the siloxane polymer based on the total weight of the upper layer.
5. The method according to claim 1 , wherein the concentration of Si in the siloxane polymer ranges from 15 wt. % to 42 wt. % based on the weight of the siloxane polymer.
6. The method according to claim 1 , further comprising performing a de-scum operation after developing the single photoresist layer.
7. The method according to claim 1 , wherein R1, R2, R3, and R4 are same or different, and are a C1 to C6 alkyl group, or a fluorine substituted C1 to C6alkyl group.
8. The method according to claim 1 , wherein R1, R2, R3, and R4 are same.
9. A method of forming a photoresist pattern, comprising:
disposing a mixture of a floating additive polymer and a photoresist over a substrate;
rotating the substrate with the mixture disposed thereon, wherein the floating additive polymer separates from the photoresist rising to an upper portion of the mixture forming an upper layer comprising the floating additive polymer disposed over a single photoresist layer, without forming a silicon-containing layer between the single photoresist layer and the substrate;
selectively exposing the upper layer and the single photoresist layer to actinic radiation;
developing the single photoresist layer to form a pattern in the single photoresist layer; and
removing the upper layer,
wherein the floating additive polymer is a siloxane polymer,
wherein the photoresist contains another polymer and one or more photoactive compounds, and the another polymer has a hydrocarbon structure as a skeletal backbone, and
wherein the siloxane polymer consists of monomers represented by
where R1, R2, R3, and R4 are same or different, and are a C1 to C6 alkyl group, or a fluorine substituted C1 to C6 alkyl group.
10. The method according to claim 9 , wherein the single photoresist layer includes metal oxide nanoparticles.
11. The method according to claim 9 , further comprising heating the single photoresist layer and upper layer after selectively exposing the single photoresist layer.
12. The method according to claim 9 , wherein the upper layer contains at least 5 wt. % of the floating additive polymer based on the total weight of the upper layer.
13. The method according to claim 9 , further comprising performing a de-scum operation after developing the single photoresist layer.
14. The method according to claim 9 , wherein the photoresist pattern is formed without forming an additional silicon-containing layer under the single photoresist layer.
15. The method according to claim 9 , wherein the photoresist pattern is formed without forming a hard mask layer under the single photoresist layer.
16. The method according to claim 9 , wherein the upper layer has a thickness ranging from 0.1 nm to 20 nm.
17. The method according to claim 9 , wherein R1, R2, R3, and R4 are same.
18. A photoresist composition, comprising:
a photoresist material; and
a siloxane polymer consisting of monomers represented by
where R1, R2, R3, and R4 are same or different, and are a C1 to C6 alkyl group, or a fluorine substituted C1 to C6 alkyl group, and
wherein the photoresist material contains another polymer and one or more photoactive compounds, and the another polymer has a hydrocarbon structure as a skeletal backbone.
19. The photoresist composition of claim 18 , wherein the photoresist material comprises metal oxide nanoparticles.
20. The photoresist composition of claim 18 , wherein R1, R2, R3, and R4 are same.