Semiconductor device package including stress buffering layer
A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.
1. A semiconductor device package, comprising:
a substrate;
a first electronic component disposed in the substrate;
an insulating layer disposed over the first electronic component;
a conductive wiring structure in the insulating layer, wherein an upper surface of the insulating layer is substantially aligned with an upper surface of the conductive wiring structure;
a second electronic component disposed over the insulating layer, wherein a portion of the second electronic component is free from vertically overlapping the first electronic component; and
a filling material disposed between a bottom surface of the first electronic component and the substrate, wherein a lower surface of the filling material is substantially aligned with a lower surface of the substrate.
2. The semiconductor device package of claim 1 , further comprising:
a third electronic component disposed over the insulating layer and adjacent to the second electronic component, wherein a portion of the third electronic component is free from vertically overlapping the first electronic component.
3. The semiconductor device package of claim 1 , further comprising:
a conductive structure disposed between the second electronic component and the insulating layer.
4. The semiconductor device package of claim 3 , wherein the conductive structure comprises a redistribution layer.
5. The semiconductor device package of claim 3 , further comprising:
an underfill layer disposed between the conductive structure and the second electronic component.
6. The semiconductor device package of claim 1 , wherein an elevation of the bottom surface of the first electronic component is higher than an elevation of the lower surface of the substrate.
7. The semiconductor device package of claim 1 , further comprising:
an interconnection via in the substrate, wherein the interconnection via is protruded beyond the lower surface of the substrate.
8. The semiconductor device package of claim 7 , wherein the interconnection via is horizontally overlapping the insulating layer.
9. A semiconductor device package, comprising:
a substrate;
a first electronic component disposed in the substrate, wherein the first electronic component comprises:
an upper electrode disposed on an upper surface of the first electronic component and electrically connected to an upper circuit layer; and
a bottom electrode disposed on a bottom surface of the first electronic component and electrically connected to a bottom circuit layer,
wherein a line width/line space of the upper circuit layer is less than a line width/line space of the bottom circuit layer.
10. The semiconductor device package of claim 9 , further comprising:
a second electronic component disposed over the upper circuit layer, wherein a first portion of the first electronic component is free from vertically overlapping the second electronic component.
11. The semiconductor device package of claim 10 , further comprising:
a third electronic component disposed over the upper circuit layer and adjacent to the second electronic component, wherein a second portion, distinct from the first portion, of the first electronic component is free from vertically overlapping the third electronic component.
12. The semiconductor device package of claim 11 , further comprising:
an encapsulant encapsulating the second electronic component and the third electronic component, wherein the encapsulant extends into a gap between the second electronic component and the third electronic component.
13. The semiconductor device package of claim 9 , further comprising:
a second electronic component comprising a first bump, a second bump adjacent to the first bump, and a third bump adjacent to the second bump,
wherein a distance between the first bump and the second bump is different from a distance between the second bump and the third bump.