Granted Patent B2

US 12,301,202 · App. 17/438,879 · Granted May 13, 2025

Inventors: Jianmin Miao (Shanghai, CN); Ruizhen Zhang (Shanghai, CN)

Assignee: SV SensTech (WUXI) Co., Ltd.

H03H9/0211H03H9/02015

Abstract

Claims (12)

1. A bulk acoustic wave resonator, comprising:

a first electrode, a piezoelectric layer and a second electrode, wherein the piezoelectric layer is disposed between the first electrode and the second electrode, the piezoelectric layer is provided with at least one slit, and along a direction pointing from the first electrode to the second electrode, the at least one slit penetrates through at least the piezoelectric layer;

wherein an orthogonal projection of the at least one slit on the first electrode is not parallel to any side of an orthogonal projection of the piezoelectric layer on the first electrode; and

wherein a shape of the orthogonal projection of the at least one slit on the first electrode comprises a rectangle, an ellipse or a trapezoid; and

wherein a shape of an orthogonal projection of the bulk acoustic wave resonator on the first electrode is a circle, a square or a rectangle.

2. The bulk acoustic wave resonator according to claim 1 , wherein

along the direction pointing from the first electrode to the second electrode, the at least one slit penetrates through the first electrode and the second electrode.

3. The bulk acoustic wave resonator according to claim 1 , wherein

a width of the orthogonal projection of the at least one slit on the first electrode ranges from 5 μm to 15 μm.

4. The bulk acoustic wave resonator according to claim 1 , wherein the piezoelectric layer is provided with at least two slits.

5. The bulk acoustic wave resonator according to claim 4 , wherein the at least two slits are not parallel to each other.

6. The bulk acoustic wave resonator according to claim 4 , wherein the at least two slits are asymmetrical.

Assignments (2)

Priority Claims (1)

Continuity (1)

References Cited (14)