Structure of the photodiode
The present invention relates to a structure of photodiode, which comprises a substrate, a first electrode, an electron transport layer, a photoactive layer, a filter layer, and a second electrode. The first electrode is disposed on the substrate. The electron transport layer is disposed on the first electrode. The photoactive layer is disposed on the electron transport layer. The photoactive layer has a first energy gap value. The filter layer is disposed on the photoactive layer and has a second energy gap value. The second electrode is disposed on the filter layer. The second energy gap value is greater than the first energy gap value. The ratio of the second energy gap value to the first energy gap value is an energy gap ratio. The energy gap ratio is greater than 1 and less than or equal to 3.
1. A structure of photodiode, converting an external light source to a current value, comprising:
a substrate;
a first electrode, disposed on said substrate;
an electron transport layer, disposed on said first electrode;
a photoactive layer, disposed on said electron transport layer, and having a first energy gap value;
a filter layer, disposed on said photoactive layer, and having a second energy gap value; and
a second electrode, disposed on said filter layer;
where said second energy gap value is greater than said first energy gap value; said second energy gap value and said first energy gap value have an energy gap ratio; and said energy gap ratio is greater than 1 and less than or equal to 3.
2. The structure of photodiode of claim 1 , wherein said substrate is selected from silicon substrate, polyimide substrate, glass substrate, polyethylene naphthalate substrate, polyethylene terephthalate substrate, sapphire substrate, quartz substrate, or ceramic substrate.
3. The structure of photodiode of claim 1 , wherein said first electrode is a transparent electrode or a metal electrode, wherein said transparent electrode is selected from the group consisting of metal oxide, conductive polymer, graphene, carbon nanotube, metal nanowire and metal mesh and the mixture thereof; and said metal electrode is selected from the group consisting of aluminum, silver, gold, copper, tungsten, molybdenum, titanium and the mixture thereof.
4. The structure of photodiode of claim 1 , wherein said electron transport layer is selected from the group consisting of SnO 2 , ZnO, TiO 2 , Cs 2 CO 3 , Nb 2 O 5 , PDMAEMA, and PFN—Br.
5. The structure of photodiode of claim 1 , further comprising a hole transport layer disposed between said filter layer and said second electrode.
6. The structure of photodiode of claim 5 , wherein said hole transport layer is selected from the group consisting of PEDOT:PSS, MoO 3 , NiO, V 2 O 5 , WO 3 , CuSCN, spiro-MeOTAD, and PTAA.
7. The structure of photodiode of claim 1 , wherein said photoactive layer is selected form the group consisting of P3HT, PCBM, PTB7, N2200, PM6, PBDB-T, Y6, IT4F, CH 3 NH 3 PbI 3 , CsPbI 3 , CH 3 NH 3 PbBr 3 , CsPbBr 3 , ZnS, CdSe, ZnSe, CdS and InP.
8. The structure of photodiode of claim 1 , wherein said filter layer is selected from the group consisting of P3HT, PTB7, PM6, PBDB-T, CH 3 NH 3 PbI 3 , CsPbI 3 , CH 3 NH 3 PbBr 3 , CsPbBr 3 , ZnS, CdSe, ZnSe, CdS, and InP.
9. The structure of photodiode of claim 1 , wherein said photoactive layer further includes at least one donor compound and at least one acceptor compound.
10. The structure of photodiode of claim 1 , wherein said second electrode is selected from metal oxide, metal, conductive polymer, carbon-based conductor, metal compound, or the mixture thereof.