Color filter structure using quantum dots and display device
Discussed is a color filter structure for converting a wavelength of light emitted from a light-emissive element. The color filter structure includes a light-conversion layer containing a first resin and quantum dots dispersed in the first resin, wherein each quantum dot has a core/shell structure. The color filter structure further includes a light-absorbing layer stacked on the light-conversion layer, wherein the light-absorbing layer contains a second resin and semiconductor nano-particles dispersed in the second resin. The semiconductor nano-particles absorb light emitted from the light-emissive element. Accordingly, the color filter structure improves color purity and luminance of the emitted light.
1. A color filter structure for converting a wavelength of light emitted from a light-emissive element, the color filter structure comprising:
a light-conversion layer containing a first resin, and only quantum dots dispersed in the first resin, wherein each quantum dot has a core/shell structure; and
a light-absorbing layer stacked on the light-conversion layer,
wherein the light-absorbing layer contains a second resin, and semiconductor nano-particles dispersed in the second resin,
wherein the semiconductor nano-particles absorb blue light emitted from the light-emissive element and do not exhibit photoluminescence characteristics, and
wherein each of the semiconductor nano-particles is made of II-VI compound semiconductor ZnSe x Te 1-x , where x is in a range of 0.72 to 0.9.
2. The color filter structure of claim 1 , wherein each of the semiconductor nano-particles has a size in a range of approximately 1 nm to 10 nm.
3. The color filter structure of claim 1 , wherein the light-emissive element includes a micro light-emitting diode for emitting blue light or an organic light-emitting diode for emitting blue light, and
wherein each of the quantum dots includes a red quantum dot containing an InP core or a green quantum dot containing an InP core.
4. The color filter structure of claim 1 , wherein refractive indexes of the first resin and the second resin are equal to each other.
5. The color filter structure of claim 4 , wherein each of the first resin and the second resin includes an acrylic resin or an epoxy resin.
6. The color filter structure of claim 1 , wherein the light-absorbing layer further contains scattering-particles dispersed in the second resin.
7. A display device comprising:
an array substrate including light-emissive elements respectively disposed in a red sub-pixel area, a green sub-pixel area, and a blue sub-pixel area; and
a color filter layer including a red color filter structure disposed on the red sub-pixel area of the array substrate, and a green color filter structure disposed on the green sub-pixel area of the array substrate,
wherein the red color filter structure includes:
a red light-conversion layer containing a first resin, and only red quantum dots dispersed in the first resin; and
a first light-absorbing layer disposed on the red light-conversion layer, wherein the first light-absorbing layer contains a second resin, and semiconductor nano-particles dispersed in the second resin, and the semiconductor nano-particles absorb blue light emitted from the light-emissive elements and do not exhibit photoluminescence characteristics, and
wherein the green color filter structure includes:
a green light-conversion layer containing the first resin, and only green quantum dots dispersed in the first resin of the green light-conversion layer;
a second light-absorbing layer disposed on the green light-conversion layer, wherein the second light-absorbing layer contains the second resin, and semiconductor nano-particles dispersed in the second resin of the second light-absorbing layer, and the semiconductor nano-particles of the second light-absorbing layer absorb blue light emitted from the light-emissive elements and do not exhibit photoluminescence characteristics, and
wherein each of the semiconductor nano-particles is made of II-VI compound semiconductor ZnSe x Te 1-x , where x is in a range of 0.72 to 0.9.
8. The display device of claim 7 , wherein each of the semiconductor nano-particles has a size in a range of approximately 1 nm to 10 nm.
9. The display device of claim 7 , wherein each of the light-emissive elements includes a micro light-emitting diode for emitting blue light or an organic light-emitting diode for emitting blue light, and
wherein each of the red and green quantum dots contains an InP core.
10. The display device of claim 7 , wherein refractive indexes of the first resin and the second resin are equal to each other.
11. The display device of claim 10 , wherein each of the first resin and the second resin includes an acrylic resin or an epoxy resin.
12. The display device of claim 7 , wherein each of the first and second light-absorbing layers further contains scattering-particles dispersed in the second resin.
13. The display device of claim 7 , wherein the color filter layer further includes a blue color filter structure disposed on the blue sub-pixel area of the array substrate, and
wherein the blue color filter structure contains a third resin, and scattering-particles dispersed in the third resin.
14. The color filter structure of claim 1 , wherein a thickness of the light-absorbing layer is approximately 2 μm to 4 μm.
15. The display device of claim 7 , wherein a thickness of the first light-absorbing layer or the second light-absorbing layer is approximately 2 μm to 4 μm.