Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus
According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface at a side opposite to the first surface, and at least one hole extending through the first and second surfaces. The ceramic layer is a ceramic layer located on the base material. The at least one hole includes a first hole part continuous with the first surface. The ceramic layer includes a first part and a second part. The first part is located on the first surface. The first part is exposed. The second part is located on the first hole part. An arithmetical mean height Sa of a surface of the first part is less than an arithmetical mean height Sa of a surface of the second part.
1. A semiconductor manufacturing apparatus member used inside a chamber of a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus member comprising:
a base material including
a first surface,
a second surface at a side opposite to the first surface, and
at least one hole extending through the first and second surfaces; and
a ceramic layer located on the base material,
the at least one hole including a first hole part continuous with the first surface,
the ceramic layer including
a first part located on the first surface, the first part being exposed, and
a second part located on the first hole part,
an arithmetical mean height Sa of a surface of the first part being less than an arithmetical mean height Sa of a surface of the second part,
wherein the arithmetical mean height Sa of the surface of the first part is a surface roughness of the surface of the first part; and the arithmetical mean height Sa of the surface of the second part is a surface roughness of the surface of the second part.
2. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the at least one hole further includes:
a second hole part positioned between the second surface and the first hole part in a first direction, the first direction being from the first surface toward the second surface; and
a third hole part positioned between the first hole part and the second hole part in the first direction, the third hole part being continuous with the first hole part and being exposed, and
an arithmetical mean height Sa of the third hole part is greater than the arithmetical mean height Sa of the surface of the first part and greater than the arithmetical mean height Sa of the surface of the second part.
3. The semiconductor manufacturing apparatus member according to claim 2 , wherein
the arithmetical mean height Sa of the third hole part is greater than 2 times the arithmetical mean height Sa of the surface of the first part.
4. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the arithmetical mean height Sa of the surface of the second part is not more than 10 times the arithmetical mean height Sa of the surface of the first part.
5. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the arithmetical mean height Sa of the surface of the second part is less than 0.5 micrometers.
6. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the arithmetical mean height Sa of the surface of the first part is less than 0.1 micrometers.
7. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the at least one hole further includes:
a second hole part positioned between the second surface and the first hole part in a first direction, the first direction being from the first surface toward the second surface; and
a third hole part positioned between the first hole part and the second hole part in the first direction, the third hole part being continuous with the first hole part and being exposed, and
an arithmetical mean height Sa of the third hole part is greater than the arithmetical mean height Sa of the surface of the first part and less than the arithmetical mean height Sa of the surface of the second part.
8. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the ceramic layer includes a polycrystalline ceramic.
9. The semiconductor manufacturing apparatus member according to claim 8 , wherein
an average crystallite size of the polycrystalline ceramic calculated using a TEM image having a magnification of 400,000 times to 2,000,000 times is not less than 3 nanometers and not more than 50 nanometers.
10. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the ceramic layer includes at least one selected from the group consisting of an oxide of a rare-earth element, a fluoride of a rare-earth element, and an acid fluoride of a rare-earth element.
11. The semiconductor manufacturing apparatus member according to claim 10 , wherein
the rare-earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.
12. The semiconductor manufacturing apparatus member according to claim 1 , wherein
the base material includes a ceramic.
13. The semiconductor manufacturing apparatus member according to claim 12 , wherein
the base material includes alumina.
14. A semiconductor manufacturing apparatus, comprising:
a chamber; and
the semiconductor manufacturing apparatus member according to claim 1 ,
the chamber including an interior wall,
the interior wall defining a space in which plasma is generated,
the ceramic layer of the semiconductor manufacturing apparatus member being included in at least a portion of the interior wall.