Package-on-package device
A package includes a redistribution structure, a die package on a first side of the redistribution structure including a first die connected to a second die by metal-to-metal bonding and dielectric-to-dielectric bonding, a dielectric material over the first die and the second die and surrounding the first die, and a first through via extending through the dielectric material and connected to the first die and a first via of the redistribution structure, a semiconductor device on the first side of the redistribution structure includes a conductive connector, wherein a second via of the redistribution structure contacts the conductive connector of the semiconductor device, a first molding material on the redistribution structure and surrounding the die package and the semiconductor device, and a package through via extending through the first molding material to contact a third via of the redistribution structure.
1. A method comprising:
connecting a first side of a redistribution structure to a die package, wherein the die package comprises:
a first die directly bonded to a second die;
a dielectric material over the second die and surrounding the first die;
a first through via extending through the dielectric material, wherein the first through via is connected to the first die; and
a second through via extending through the dielectric material, wherein the second through via is connected to the second die;
connecting a semiconductor device to the first side of the redistribution structure;
forming a third through via on the first side of the redistribution structure; and
forming a molding material on the redistribution structure, wherein the molding material laterally separates the die package from the semiconductor device, wherein the molding material laterally surrounds the third through via.
2. The method of claim 1 , further comprising performing a planarization process that thins the dielectric material to expose the first through via and the second through via.
3. The method of claim 2 , wherein the planarization process also thins the molding material to expose the third through via.
4. The method of claim 2 , wherein the planarization process exposes the semiconductor device.
5. The method of claim 1 further comprising connecting a package component to the third through via over the first side of the redistribution structure.
6. The method of claim 1 , wherein the first through via, the second through via, and the third through via each have a different width.
7. The method of claim 1 , wherein the third via has a height that is greater than a height of the die package.
8. The method of claim 1 , wherein the second die has a width that is smaller than a width of the first die.
9. A method comprising:
forming a first package component comprising:
bonding a first semiconductor device to a first side of a second semiconductor device using fusion bonding, wherein the first semiconductor device comprises first through-vias; and
covering the first through-vias with a first dielectric layer; and
removing a portion of the first dielectric layer to expose the first through-vias;
attaching the first package component to a first redistribution structure;
attaching an integrated circuit die to the first redistribution structure;
forming second through-vias on the first redistribution structure;
covering the first package component, the integrated circuit die, and the second through-vias with a molding material; and
forming a second redistribution structure over and electrically connected to the first through-vias, the integrated circuit die, and the second through-vias.
10. The method of claim 9 , wherein forming the first package component further comprises forming third through-vias on the first side of the second semiconductor device.
11. The method of claim 9 , wherein forming the first package component further comprises bonding a third semiconductor device to the first semiconductor device using fusion bonding.
12. The method of claim 9 , wherein forming the first package component further comprises bonding a fourth semiconductor device to the first side of the second semiconductor device using fusion bonding.
13. The method of claim 9 further comprising performing a planarization process on the molding material, wherein the planarization process exposes the first through-vias and the second through-vias.
14. The method of claim 9 , wherein the integrated circuit die and the first package component have different widths.
15. The method of claim 9 , wherein the integrated circuit die and the first package component are electrically connected to the first redistribution structure by the second through-vias.
16. The method of claim 9 , wherein forming the first package component further comprises covering the first through-vias with a second dielectric layer and performing a planarization process to expose the first through-vias.
17. The method of claim 9 , wherein forming the first package component further comprises forming third through-vias on the first side of the second semiconductor device.
18. A package, comprising:
a device structure comprising a first die bonded to a second die, wherein the first die comprises first through vias having a first pitch, wherein the device structure comprises second through vias on the second die, wherein the second through vias have a second pitch different than the first pitch;
a third die comprising third through vias that have a third pitch that is different than the first pitch;
a first redistribution structure extending over and connected to the first through vias, the second through vias, and the third through vias;
an encapsulant on the first redistribution structure, wherein the encapsulant separates the device structure from the third die; and
fourth through vias extending through the encapsulant, wherein the first redistribution structure extends over and is connected to the fourth through vias.
19. The package of claim 18 further comprising a package component connected to the fourth through vias.
20. The package of claim 18 , wherein the device structure further comprises a dielectric material on the second die, wherein the second through vias extend the dielectric material.