Power module
A power module includes a substrate, at least one power unit, a first carrier plate and at least one input capacitor. The power unit is disposed on the substrate and includes at least one half-bridge circuit including a first power switch and a second power switch connected in series. A second terminal of the first power switch and a first terminal of the second power switch are connected to a node. The first carrier plate and the input capacitor are arranged between the power unit and the substrate. A first electrode of the substrate is connected with the node through the first carrier plate. A top surface of a first terminal of the input capacitor is connected with a first terminal of the first power switch, and a top surface of a second terminal of the input capacitor is connected with a second terminal of the second power switch.
1. A power module, comprising:
a substrate comprising a first insulation layer, at least one passive component, at least one first through-hole structure, a second insulation layer, a first electrode and a second electrode, wherein the first insulation layer has a top surface and a bottom surface, the at least one passive component is embedded in the first insulation layer, each passive component comprises a first conducting terminal, the at least one first through-hole structure is formed in the first insulation layer and arranged beside a first side of the passive component, the first through-hole structure runs through the first insulation layer, the first through-hole structure comprises a conductive part and an insulation part, the insulation part is disposed within the conductive part, the conductive part of the first through-hole structure is in contact with the first conducting terminal and formed as the first electrode, the second insulation layer is disposed on portion of the conductive part of the first through-hole structure that is close to the bottom surface of the first insulation layer, at least part of the second electrode is disposed on the second insulation layer, and the second electrode is in contact with the bottom surface of the first insulation layer, wherein a projected area of the second electrode and a projected area of the first electrode along a direction perpendicular to the top surface of the first insulation layer are at least partially overlapped with each other, wherein the second electrode and the first electrode are different electrodes; and
at least one power unit disposed on the substrate, wherein the at least one power unit comprises at least one half-bridge circuit, and the half-bridge circuit comprises a first power switch and a second power switch connected in series, wherein a second terminal of the first power switch and a first terminal of the second power switch are connected to a node;
a first carrier plate arranged between the at least one power unit and the substrate, wherein the first electrode is connected with the node through the first carrier plate; and
at least one input capacitor comprising a first terminal and a second terminal, wherein a top surface of the first terminal of the at least one input capacitor is connected with a first terminal of the first power switch, a top surface of the second terminal of the at least one input capacitor is connected with a second terminal of the second power switch, and the at least one input capacitor is disposed between the at least one power unit and the substrate.
2. The power module according to claim 1 , wherein the at least one input capacitor is disposed on a lower surface of the first carrier plate and located between the first carrier plate and the substrate.
3. The power module according to claim 1 , wherein an electrode stacking direction of the first terminal and the second terminal of the at least one input capacitor is parallel to a stacking direction of the first carrier plate and the substrate.
4. The power module according to claim 2 , wherein the top surface of the first terminal of the at least one input capacitors is connected with the lower surface of the first carrier plate, the top surface of the second terminal of the at least one input capacitors is connected with the lower surface of the first carrier plate, a lower surface of the first terminal of the at least one input capacitors is connected with the substrate, and a lower surface of the second terminal of the at least one input capacitors is connected with the substrate.
5. The power module according to claim 2 , wherein the power module further comprises at least one first conductive component, wherein the at least one first conductive component is disposed between the first carrier plate and the substrate and connected to the first carrier plate and the substrate, wherein the at least one first conductive component is electrically coupled with the first terminal of the first power switch or the second terminal of the second power switch.
6. The power module according to claim 1 , wherein the first carrier plate comprises a first terminal and a second terminal, and the first terminal and the second terminal of the first carrier plate are located on a lower surface of the first carrier plate, wherein the first terminal of the first carrier plate is connected to the first terminal of the first power switch, the second terminal of the first carrier plate is connected to the second terminal of the second power switch, and the first terminal and the second terminal of the first carrier plate are alternately arranged.
7. The power module according to claim 1 , wherein an electrode stacking direction of the first terminal and the second terminal of the at least one input capacitor is perpendicular to a stacking direction of the first carrier plate and the substrate.
8. The power module according to claim 1 , wherein the at least one input capacitor is embedded in the first carrier plate.
9. The power module according to claim 1 , wherein the power module further comprises a molding compound layer, the molding compound layer covers the at least one input capacitor and at least a part of the first carrier plate, and a molding unit is formed by the molding compound layer, the at least one input capacitor and the first carrier plate, wherein the molding unit comprises a second conductive component, the second conductive component is extended from a lower surface of the molding unit to a top surface of the molding unit and forms terminals on the top surface and the lower surface of the molding unit.
10. The power module according to claim 9 , wherein the molding compound layer covers the at least one power unit located on a top surface of the first carrier plate.