Semiconductor structure and fabrication method thereof
A semiconductor structure includes a substrate having a first device region and a second device region in proximity to the first device region. A trench isolation structure is disposed in the substrate between the first device region and the second device region. The trench isolation structure includes a first bottom surface within the first device region and a second bottom surface within the second device region. The first bottom surface is coplanar with the second bottom surface.
1. A method for fabricating a semiconductor structure, comprising:
providing a substrate comprising a first device region and a second device region in proximity to the first device region;
forming a trench isolation structure in the substrate between the first device region and the second device region;
conformally depositing a mask layer on the substrate to cover the first device region, the second device region, and the trench isolation structure;
forming a first resist pattern on the mask layer, wherein the first resist pattern covers the trench isolation structure and the second device region;
removing the mask layer and a pad oxide layer not covered by the first resist pattern from the first device region, thereby exposing a top surface of the substrate in the first device region;
removing the first resist pattern;
oxidizing the top surface of the substrate in the first device region to form a sacrificial oxide layer;
removing the sacrificial oxide layer to expose the top surface of the substrate in the first device region; and
removing the mask layer to expose a top surface of the trench isolation structure.
2. The method according to claim 1 , wherein the mask layer is a silicon nitride layer.
3. The method according to claim 1 , wherein the mask layer has a thickness of about 200-220 angstroms.
4. The method according to claim 1 , wherein the pad oxide layer has a thickness of about 100-110 angstroms.
5. The method according to claim 1 further comprising:
growing a first gate oxide layer on the top surface of the substrate in the first device region after removing the mask layer.
6. The method according to claim 5 , wherein the first gate oxide layer has a thickness of about 200-220 angstroms.
7. The method according to claim 1 , wherein a consumed thickness of the top surface of the substrate in the first device region, which is consumed by forming the sacrificial oxide layer, is about 190-210 angstroms.
8. The method according to claim 5 further comprising:
forming a second resist pattern on the substrate, wherein the second resist pattern covers the first gate oxide layer within the first device region, but does not cover the trench isolation structure and the second device region;
etching the trench isolation structure and the second device region, thereby exposing a top surface of the substrate in the second device region; and
removing the second resist pattern.
9. The method according to claim 8 further comprising:
growing a second gate oxide layer on the top surface of the substrate in the second device region.
10. The method according to claim 8 , wherein the trench isolation structure comprises a first top surface within the first device region and a second top surface within the second device region, wherein the first top surface is coplanar with the second top surface.
11. The method according to claim 8 , wherein the top surface of the substrate in the first device region is lower than the top surface of the substrate in the second device region.
12. The method according to claim 1 , wherein the trench isolation structure comprises a first bottom surface within the first device region and a second bottom surface within the second device region, wherein the first bottom surface is coplanar with the second bottom surface.
13. The method according to claim 1 , wherein the first device region is a medium-voltage device region and the second device region is a low-voltage device region.