Memory system, memory controller and method for operating memory system
Embodiments of the disclosed technology relate to a memory system, a memory controller and a method for operating a memory system. According to the embodiments of the disclosed technology, a memory system may include a volatile memory accessed through a plurality of address fields, and divided into a plurality of subareas on the basis of a reference address field among the plurality of address fields; and a memory controller including a plurality of cores to which the plurality of subareas are allocated and which generate test signals corresponding to a test pattern. The memory controller may transmit the test signals generated in the plurality of cores, respectively, to the volatile memory.
1. A memory system comprising:
a nonvolatile memory configured to store data;
a volatile memory accessed through a plurality of address fields, and divided into a plurality of subareas on the basis of a reference address field among the plurality of address fields; and
a memory controller configured to control the nonvolatile memory using the volatile memory, and
the memory controller including:
a plurality of cores, to which the plurality of subareas are allocated; and
a volatile memory control unit,
wherein each of the plurality of cores is configured to generate in parallel test signals, having respective test patterns for testing whether the volatile memory is operating normally, and transmit the test signals to the volatile memory control unit, and
wherein the volatile memory control unit is configured to transmit, to the volatile memory, commands corresponding to the respective test signals by a) enqueuing the test signals, b) dequeuing the test signals, and c) sending the commands corresponding to the respective test signals to each subarea for execution of the test patterns.
2. The memory system according to claim 1 , wherein the reference address field is a most significant address field among the plurality of address fields.
3. The memory system according to claim 1 , wherein:
the volatile memory includes a plurality of banks, and
each of the plurality of banks includes a plurality of memory cells which are defined by rows and columns.
4. The memory system according to claim 3 , wherein the reference address field is a row address field which indicates the rows.
5. The memory system according to claim 3 , wherein:
the reference address field includes a chip select field.
6. The memory system according to claim 1 , wherein the plurality of cores are flash translation layer (FTL) cores or host interface layer (HIL) cores.
7. The memory system according to claim 1 , wherein the test patterns include at least one of a march test pattern and a jump test pattern.
8. The memory system according to claim 1 , wherein the cores generate the test signals in an initial inspection of the memory system.
9. The memory system according to claim 1 , wherein the cores generate the test signals in a booting process of the memory system.
10. A memory controller comprising:
a processor configured to control a nonvolatile memory using a volatile memory, and the processor including a plurality of cores, to which a plurality of subareas divided on the basis of a reference address field among a plurality of address fields for an access to a volatile memory are allocated, each of the plurality of cores being configured to generate in parallel test signals, having respective test patterns for testing whether the volatile memory is operating normally; and
a volatile memory control unit configured to:
provide interface with the plurality of subareas of the volatile memory, and
transmit, to the volatile memory, commands corresponding to the respective test signals by a) enqueuing the test signals, b) dequeuing the test signals, and c) sending the commands corresponding to the respective test signals to each subarea for execution of the test patterns.
11. The memory controller according to claim 10 , wherein the reference address field is a most significant address field among the plurality of address fields.
12. The memory controller according to claim 10 , wherein the reference address field is a row address field which indicates a row of the volatile memory.
13. The memory controller according to claim 10 , wherein the reference address field includes a chip select field.
14. The memory controller according to claim 10 , wherein the plurality of cores are flash translation layer (FTL) cores or host interface layer (HIL) cores.
15. A memory system comprising:
a non-volatile memory device;
a volatile memory device;
a direct memory access (DMA) unit; and
a controller configured to:
control the non-volatile memory device to perform an operation,
request the DMA unit to control the volatile memory device to perform an operation, and
perform, without involvement of the DMA unit, a test operation independently on each of groups of the volatile memory device,
wherein each of the groups includes rows of memory cells within the volatile memory device,
wherein the controller is configured to generate in parallel test signals, having respective test patterns for testing whether the volatile memory is operating normally, and transmit commands corresponding to the respective test signals to the volatile memory device by a) enqueuing the test signals, b) dequeuing the test signals, and c) sending the commands corresponding to the respective test signals to each group for execution of the test patterns.
16. The memory system according to claim 15 , wherein the controller is configured to transmit, to the volatile memory device through the DMA unit during an initial inspection, test signals for testing an entire area of the volatile memory device sequentially according to addresses.
17. The memory system according to claim 15 , wherein the controller is configured to generate test signals and transmit the test signals to the volatile memory device in a booting process.
18. The memory system according to claim 15 , wherein the controller includes a plurality of cores, to which a plurality of subareas divided on the basis of a reference address field among a plurality of address fields for an access to the volatile memory device are allocated, the cores being configured to generated test signals corresponding to respective test patterns.
19. The memory system according to claim 18 , wherein the reference address field is a most significant address field among the plurality of address fields.
20. The memory system according to claim 18 , wherein the reference address field is a row address field which indicates the rows of the memory cells within the volatile memory device.