Semiconductor die
A manufacturing method of a semiconductor device includes the following steps. A singulation process is performed to a semiconductor wafer for forming semiconductor dies and includes a first cutting step, a thinning step, and a second cutting step. The first cutting step is configured to form first openings in the semiconductor wafer by etching. A portion of the semiconductor wafer is located between each first opening and a back surface and removed by the thinning step. Each first opening penetrates through the semiconductor wafer after the thinning step. The second cutting step is configured to form second openings. Each second opening penetrates through the semiconductor wafer for separating the semiconductor dies. A semiconductor die includes two first side surfaces opposite to each other and two second side surfaces opposite to each other. A roughness of each first side surface is different from a roughness of each second side surface.
1. A semiconductor die, comprising:
two first side surfaces separated from each other, wherein the two first side surfaces are opposite to each other in a first direction;
two second side surfaces separated from each other, wherein the two second side surfaces are opposite to each other in a second direction perpendicular to the first direction, and a roughness of each of the first side surfaces is different from a roughness of each of the second side surfaces; and
third side surfaces located at corners of the semiconductor die, wherein each of the third side surfaces is directly connected with one of the two first side surfaces and one of the two second side surfaces, respectively, and a roughness of each of the third side surfaces is different from the roughness of the each of the first side surfaces and the roughness of each of the second side surfaces.
2. The semiconductor die according to claim 1 , wherein each of the two first side surfaces is elongated in the second direction, and each of the two second side surfaces is elongate in the first direction.
3. The semiconductor die according to claim 1 , wherein each of the third side surfaces is a curved side surface.