Vertical cavity surface emitting laser diode (VCSEL) with tunnel junction
Provided is a vertical cavity surface emitting laser diode (VCSEL). A tunnel junction with a high doping concentration is provided in the VCSEL. An n-type semiconductor layer of the tunnel junction has stress relative to the substrate, and is doped with at least one element such that the tunnel junction not only has a high doping concentration, but also the epitaxial layer can be oxidized and the oxidation rate is relatively stable during the oxidation process. Alternatively, the n-type semiconductor layer is doped with at least two elements. As a result, the oxidation process of the VCSEL can be stably performed, and the resistance of the tunnel junction with a high doping concentration is low. The tunnel junction is suitable to be arranged between two active layers of the VCSEL or between the p-type semiconductor and the n-type semiconductor layer of the VCSEL.
1. A vertical cavity surface emitting laser diode (VCSEL), comprising:
a GaAs substrate; and
an epitaxial structure positioned on the GaAs substrate, wherein the epitaxial structure comprises:
an oxidation layer; and
a tunnel junction comprising a n-type semiconductor layer and being positioned above or below the oxidation layer, wherein the n-type semiconductor layer including InGaAs is doped with tellurium and/or selenium, and the n-type semiconductor layer is not latticed-matched to the GaAs substrate such that the n-type semiconductor layer has stress relative to the GaAs substrate, wherein the tunnel junction further comprises a p-type semiconductor layer, the p-type semiconductor layer including AlGaAs is doped with carbon, and a carbon doping concentration of the p-type semiconductor layer is greater than 8×10 19 /cm 3 ,
wherein the epitaxial structure comprises an active region, the active region comprising a plurality of active layers, and the tunnel junction and the oxidation layer are provided between two adjacent active layers of the plurality of active layers so that the two adjacent active layers are connected in series through the tunnel junction,
wherein the oxidation layer comprises an optical aperture, the optical aperture is formed after the epitaxial structure is subject to an oxidation process.
2. The VCSEL as claimed in claim 1 , wherein the n-type semiconductor layer is further doped with silicon and carbon.
3. The VCSEL as claimed in claim 1 , wherein the epitaxial structure further includes an upper DBR layer and a lower DBR layer.
4. The VCSEL as claimed in claim 1 , wherein the epitaxial structure comprises at least one spacer layer being positioned above or below the active region.
5. The VCSEL as claimed in claim 1 , wherein the active region comprises at least one spacer layer, the at least one spacer layer is between two active layers of the plurality of active layers, and the tunnel junction is provided in the at least one spacer layer.
6. The VCSEL as claimed in claim 1 , wherein the epitaxial structure further comprises another oxidation layer, and the another oxidation layer is provided outside the active region.
7. The VCSEL as claimed in claim 1 , wherein the n-type semiconductor layer is further doped with silicon or carbon.