Method for microwelding flexible thin films, for example for use in electrical and electronic devices
A method for welding a flexible film ( 10 ) to a carrier component ( 20 ) having the following steps: 1) pressing the film ( 10 ) on the carrier component ( 20 ) by a volumetric flow of a fluid, and 2) laser welding the film ( 10 ) on the carrier component ( 20 ).
1. A method for welding a flexible film ( 10 ) to a carrier component ( 20 ), having the following steps:
1) Pressing the film ( 10 ) on the carrier component ( 20 ) by a volumetric flow of a fluid, and
2) laser welding the film ( 10 ) on the carrier component ( 20 ),
wherein before step 1), a pre-deforming of the film ( 10 ) is performed using a method that does not include the volumetric flow of fluid and is done by means of a negative mold (M), and
wherein the method is used for welding a flexible film ( 10 ) in the form of a flexible trace embedded within a flexible circuit board (FPC) to an electrical carrier component ( 20 ) in the form of landing on a rigid circuit board (PCB).
2. The method according to claim 1 , wherein, in step 1), the fluid is a pressurized fluid, and/or wherein, in step 1), the volumetric flow is produced by a nozzle or a nozzle comb.
3. The method according to claim 2 , wherein the pressurized fluid is in the form of compressed air, nitrogen and/or shielding gas.
4. The method according to claim 1 , wherein, in step 2), a laser radiation in the visible wavelength range, or an NIR laser radiation is used, and/or wherein, in step 2), a pulsed laser radiation, a quasi CW laser radiation or a CW laser radiation is used.
5. The method according to claim 4 , wherein the laser in the visible wavelength range is in the green wavelength range and/or in the blue wavelength range.
6. The method according to claim 1 , wherein, in step 2), a laser radiation with at least one of the following parameters is used:
a wavelength of 500 nm-600 nm,
a focus diameter of 20 μm-1 mm,
a power output of 1 W-4000 W,
a pulse duration of 0.3 ms-50 ms,
a scanning rate of 1 mm/s-1 km/s.
7. The method according to claim 6 , wherein the laser radiation is a quasi CW laser radiation, with at least one of the following parameters:
a wavelength of 515 nm,
a focus diameter of 150 μm,
a power output of 1 200 W-600 W,
a pulse duration of 2 ms-6 ms,
a scanning rate of 200 mm/s-300 mm/s.
8. The method according to claim 1 , wherein, in step 2), a laser radiation with at least one of the following parameters is used:
a wavelength of 1030 nm-1064 nm,
a focus diameter of 10 μm-500 μm,
a power output of 1 W-2000 W,
a frequency of 1 Hz-2000 kHz,
a pulse duration of: 1 ns-500 ns,
a scanning rate of: 1 mm/s-1 km/s.
9. The method according to claim 8 , wherein the laser radiation is a pulsed laser radiation, with at least one of the following parameters:
a wavelength of 1030 nm-1064 nm,
a focus diameter of 20 μm-200 μm,
a power output of 10 W-500 W,
a frequency of 1000 Hz-2000 Hz,
a pulse duration of: 120 ns-500 ns,
a scanning rate of: 10 mm/s-1000 mm/s.
10. The method according to claim 9 , wherein the laser radiation is a pulsed laser radiation, with at least one of the following parameters:
a power output of 20 W-100 W
a scanning rate of: 10 mm/s-100 mm/s.
11. The method according to claim 8 , wherein the laser radiation is a pulsed laser radiation.
12. The method according to claim 1 , wherein, after step 2), a testing of a weld seam (N) for conductivity, resistance and/or impedance is performed.
13. The method according to claim 1 , wherein the method is used for welding multiple flexible films ( 10 ) to multiple carrier components ( 20 ) in the same pass.
14. The method according to claim 1 , wherein the method is used for welding a flexible film ( 10 ) of a layer thickness of 20 μm-100 μm, to an electrical carrier component ( 20 ) of a thickness of 50 μm-500 μm.
15. The method according to claim 14 , wherein the method is used for welding a flexible film ( 10 ) of a layer thickness of 35 μm, to an electrical carrier component ( 20 ) of a thickness of 50 μm-140 μm.
16. The method according to claim 15 , wherein the method is used for welding a flexible film ( 10 ) of a layer thickness of 35 μm, to an electrical carrier component ( 20 ) of a thickness of 135 μm.
17. The method according to claim 1 , wherein the metal is copper.
18. The method according to claim 1 , wherein the pre-deforming of the film ( 10 ) includes using a punch(S).
19. The method according to claim 18 , wherein the punch(S) is an embossing punch(S) that cooperates with the negative mold (M).
20. The method according to claim 1 , wherein the pre-deforming of the film ( 10 ) includes deep drawing the film ( 10 ).
21. The method according to claim 1 , wherein the pre-deforming of the film ( 10 ) includes microdeforming the film ( 10 ).