IP Library › Granted Patent US 12,322,433
Granted Patent B2
US 12,322,433 · App. 17/131,585 · Granted Jun 3, 2025

Power and performance optimization in a memory subsystem

Inventors: Vijay Anand Mathiyalagan (Barasat, IN); Sambaran Mitra (Chennai, IN)
Assignee: Intel Corporation
G11C11/4074G06F11/1004G11C11/4096
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Quick Facts
Patent No.
US 12,322,433
App. No.
17/131,585
Granted
Jun 3, 2025
Kind
B2
Abstract

Hardware and/or software that dynamically enables or disables CRC and/or adjust voltage level of power supply to a physical layer block on a host by determining an optimum tradeoff between power and performance. The hardware and/or software decreases the voltage level for the power supply and enables CRC to compensate signal errors (e.g., errors from signal integrity issues). Hardware and/or software dynamically adjusts voltage level of the power supply rail based on the throughput or speed of the DDR link. In some examples, depending on read or write operations, the voltage level of the power supply rail is adjusted.

Claims (30)

1. An apparatus comprising:

a memory controller;

a memory Input/Output (IO) physical layer coupled to the memory controller; and

a voltage supply generator coupled to the memory IO physical layer, wherein the voltage supply generator is to provide an adjustable voltage supply to the memory IO physical layer, wherein the memory controller is to instruct the voltage supply generator directly or indirectly to change the adjustable voltage supply and enable or disable an error detection mechanism used to detect errors in data conveyed over a data link that couples the memory IO physical layer to a memory according to noise level on the data link that couples the memory IO physical layer to the memory and based on a determination to either emphasize power conservation or to maintain performance.

2. The apparatus of claim 1 , wherein the memory controller is to decrease a voltage level of the adjustable voltage supply and enable the error detection mechanism.

3. The apparatus of claim 1 , wherein the memory controller is to increase a voltage level of the adjustable voltage supply and to the disable the error detection mechanism.

4. The apparatus of claim 1 , wherein the memory controller is to dynamically enable or disable the error detection mechanism and/or adjust a voltage level of the adjustable voltage supply.

5. The apparatus of claim 1 , wherein the error detection mechanism comprises cyclic redundancy check.

6. The apparatus of claim 1 , wherein the memory controller is to club read operations together, and wherein the memory controller is to instruct the voltage supply generator directly or indirectly to lower the adjustable voltage supply prior to the read operations.

7. The apparatus of claim 1 , wherein the memory controller is to club write operations together, and wherein the memory controller is to instruct the voltage supply generator to directly or indirectly to increase the adjustable voltage supply prior to the write operations.

8. The apparatus of claim 7 , wherein the memory controller is to instruct the voltage supply generator directly or indirectly to increase the adjustable voltage supply prior to the write operations even when there is a high priority read operation between two of the write operations.

9. The apparatus of claim 1 , wherein the memory controller is to determine a transfer rate of the data link, and to instruct the voltage supply generator directly or indirectly to change the adjustable voltage supply according to the transfer rate of the data link.

10. The apparatus of claim 9 , wherein the memory controller is to instruct the voltage supply generator directly or indirectly to increase the adjustable voltage supply if the transfer rate of the data link increases.

11. The apparatus of claim 9 , wherein the memory controller is to instruct the voltage supply generator directly or indirectly to decrease the adjustable voltage supply if the transfer rate of the data link decreases.

12. The apparatus of claim 1 , wherein the memory is a dynamic random access memory (DRAM).

13. The apparatus of claim 1 , wherein the data link is a dynamic data rate (DDR) compliant data link.

14. A machine-readable storage media having machine-executable instructions stored thereon that when executed cause one or more machines to perform a method comprising to:

determine to either emphasize power conservation or to maintain performance; and

instruct a voltage supply generator directly or indirectly to change an adjustable voltage supply to a memory input/output (IO) physical layer and instruct to enable or disable an error detection mechanism used to detect errors in data conveyed over a data link that couples the memory IO physical layer to a memory according to noise level on the data link that couples the memory IO physical layer to the memory and based on the determination.

15. The machine-readable storage media of claim 14 , having machine-executable instructions stored thereon that when executed cause the one or more machines to perform the method comprising to:

instruct to decrease the voltage level of the adjustable voltage supply and instruct to enable the error detection mechanism.

16. The machine-readable storage media of claim 14 , having machine-executable instructions stored thereon that when executed cause the one or more machines to perform the method comprising to:

club read operations together;

instruct the voltage supply generator directly or indirectly to lower the adjustable voltage supply prior to the read operations.

17. A system comprising:

a processor comprising a plurality of cores;

a memory controller coupled to the processor;

a memory coupled to the memory controller via a memory input/output (IO) physical layer;

a wireless interface to allow the processor to communicate with another device;

a voltage supply generator coupled to the memory IO physical layer, wherein the voltage supply generator is to provide an adjustable voltage supply to the memory IO physical layer, wherein the memory controller is to instruct the voltage supply generator directly or indirectly to change the adjustable voltage supply and enable or disable an error detection mechanism used to detect errors in data conveyed over a data link that couples the memory IO physical layer to a memory according to noise level on the data link that couples the memory IO physical layer to the memory and based on a determination to either emphasize power conservation or to maintain performance.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2021
From: MATHIYALAGAN, VIJAY ANAND; MITRA, SAMBARAN
To: INTEL CORPORATION
Reel/Frame 055663/0513 →
Continuity (1)
Related Publication 20220199142A1 · Jun 23, 2022
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