Display device including a node connection line, a shielding portion and a driving voltage line
A display device includes a scan line extending in a first direction, a data line and a driving voltage line extending in a second direction crossing the first direction, a switching thin film transistor (“TFT”) connected to the scan line and the data line, a driving TFT connected to the switching TFT and including a driving semiconductor layer and a driving gate electrode, a storage capacitor connected to the driving TFT and including first and second storage capacitor plates, a node connection line between the data line and the driving voltage line and connected to the driving gate electrode, and a shielding portion between the data line and the node connection line.
1. A display device comprising:
a first transistor comprising a first semiconductor layer and a first gate electrode overlapping the first semiconductor layer;
a storage capacitor comprising an electrode overlapping the first gate electrode;
a first scan line extending in a first direction;
a second scan line extending in the first direction;
a data line extending in a second direction crossing the first direction;
a second transistor comprising a second semiconductor layer, wherein the first scan line comprises a second gate electrode of the second transistor, the second gate electrode overlaps the second semiconductor layer;
a third transistor comprising a third semiconductor layer, wherein the first scan line comprises two third gate electrodes of the third transistor, the third semiconductor layer comprises a first portion extending in the first direction and a second portion extending in the second direction, and the two third gate electrodes overlaps the first portion and the second portion of the third semiconductor layer, respectively;
a fourth transistor comprising a fourth semiconductor layer, wherein the second scan line comprises a fourth gate electrode overlapping the fourth semiconductor layer;
a driving voltage line extending in the second direction, wherein a portion of the driving voltage line overlaps a portion of the third semiconductor layer;
a node connection line positioned between the data line and the driving voltage line; and
a shielding portion, wherein an end portion of the shielding portion is disposed between the data line and the node connection line.
2. The display device of claim 1 , wherein the shielding portion comprises a metallic material.
3. The display device of claim 1 , wherein the end portion of the shielding portion is disposed between the first scan line and the second scan line.
4. The display device of claim 1 , wherein the third semiconductor layer comprises a bent portion between the first portion and the second portion.
5. The display device of claim 1 , wherein the shielding portion has a constant voltage level.
6. The display device of claim 1 , wherein;
the first semiconductor layer and the second semiconductor layer are integrally coupled to each other, and
the third semiconductor layer and the fourth semiconductor layer are integrally coupled to each other.
7. The display device of claim 6 , wherein the first semiconductor layer and the third semiconductor layer are integrally coupled to each other.
8. The display device of claim 6 , wherein each of the first semiconductor layer and the third semiconductor layer comprises a poly silicon.
9. The display device of claim 1 , wherein:
a first portion of the node connection line is electrically connected to the third semiconductor layer via a first contact hole,
a second portion of the node connection line is electrically connected to the first gate electrode via a second contact hole, and
the second semiconductor layer is electrically connected to the data line via a third contact hole.
10. The display device of claim 9 , wherein the end portion of the shielding portion disposed between the first contact hole and the third contact hole.
11. A display device comprising:
a first transistor comprising a first semiconductor layer and a first gate electrode overlapping the first semiconductor layer;
a first scan line extending in a first direction;
a second scan line extending in the first direction;
a data line extending in a second direction crossing the first direction;
a second transistor comprising a second semiconductor layer, wherein the first scan line comprises a second gate electrode of the second transistor, the second gate electrode overlaps the second semiconductor layer;
a third transistor comprising a third semiconductor layer, wherein the first scan line comprises a third gate electrode of the third transistor;
a fourth transistor comprising a fourth semiconductor layer, wherein the second scan line comprises a fourth gate electrode overlapping the fourth semiconductor layer;
a driving voltage line extending in the second direction, wherein a portion of the driving voltage line overlaps a portion of the third semiconductor layer;
a node connection line positioned between the data line and the driving voltage line; and
a metallic portion having a constant voltage level, wherein an end portion of the metallic portion is disposed between the data line and the node connection line.
12. The display device of claim 11 , wherein the third semiconductor layer comprises:
a first portion extending in the first direction,
a second portion extending in the second direction, and
a bent portion between the first portion and the second portion.
13. The display device of claim 12 , wherein the third gate electrode comprises:
a first sub-gate electrode overlapping the first portion; and
a second sub-gate electrode overlapping the second portion.
14. The display device of claim 12 , wherein the driving voltage line overlaps a part of the bent portion.
15. The display device of claim 11 , wherein the end portion of the metallic portion is disposed between the first scan line and the second scan line.
16. The display device of claim 11 , wherein;
the first semiconductor layer and the second semiconductor layer are integrally coupled to each other, and
the third semiconductor layer and the fourth semiconductor layer are integrally coupled to each other.
17. The display device of claim 16 , wherein the first semiconductor layer and the third semiconductor layer are integrally coupled to each other.
18. The display device of claim 16 , wherein each of the first semiconductor layer and the third semiconductor layer comprises a poly silicon.
19. The display device of claim 11 , wherein:
a first portion of the node connection line is electrically connected to the third semiconductor layer via a first contact hole,
a second portion of the node connection line is electrically connected to the first gate electrode via a second contact hole, and
the second semiconductor layer is electrically connected to the data line via a third contact hole, and
wherein the end portion of the metallic portion disposed between the first contact hole and the third contact hole.