Method of manufacturing display device using semiconductor light emitting element
A method of manufacturing a display device according to the present invention involves assembling a semiconductor light emitting element to an assembly substrate and then transferring the same to a wiring substrate, wherein, during self-assembly using magnetic and electric fields, the semiconductor light emitting element is fixed to the assembly substrate by forming a covalent bond between the semiconductor light emitting element and the assembly substrate so that the semiconductor light emitting element does not become separated from the assembly substrate, and when transferring the assembled object to the wiring substrate, the formed covalent bond is broken down so that the semiconductor light emitting element can be easily detached from the assembly substrate.
1. A method of manufacturing a display device by seating semiconductor light emitting elements placed into a chamber containing a fluid onto an assembly substrate at preset positions using electric and magnetic fields, the assembly substrate including assembly electrodes, the method comprising:
placing the assembly substrate to be immersed in the fluid in the chamber while one surface of the assembly substrate including the assembly electrodes faces a bottom surface of the chamber;
applying a voltage to at least some of the assembly electrodes to seat the semiconductor light emitting elements at the preset positions of the assembly substrate;
forming a covalent bond between the semiconductor light emitting elements and a surface of the assembly substrate such that the semiconductor light emitting elements are fixed to the assembly substrate;
separating the assembly substrate from the fluid;
cleaving the covalent bond formed between the semiconductor light emitting elements and the surface of the assembly substrate; and
transferring the semiconductor light emitting elements to a wiring substrate on which wiring electrodes are disposed,
wherein the forming of the covalent bond between the semiconductor light emitting elements and the surface of the assembly substrate is carried out at the same time as the seating of the semiconductor light emitting elements at the preset positions of the assembly substrate, or after the seating of the semiconductor light emitting elements.
2. The method of claim 1 , wherein the semiconductor light emitting elements and the surface of the assembly substrate comprise at least one of a predetermined functional group and a predetermined compound for forming the covalent bond between the semiconductor light emitting elements and the surface of the assembly substrate.
3. The method of claim 2 , wherein the assembly substrate comprises:
a base portion on which the assembly electrodes are disposed;
a dielectric layer deposited on the base portion to cover the assembly electrodes; and
a partition wall deposited on the dielectric layer while forming a cell in which one semiconductor light emitting element of the semiconductor light emitting elements is seated along an extension direction of the assembly electrode to overlap with a part of the assembly electrode,
wherein the dielectric layer comprises at least one of the predetermined functional group and the predetermined compound.
4. The method of claim 2 , wherein the predetermined functional group formed on the semiconductor light emitting elements and the surface of the assembly substrate is a hydroxyl group.
5. The method of claim 2 , wherein the predetermined compound bonded to the semiconductor light emitting elements and the surface of the assembly substrate is a silane coupling agent, and the silane coupling agent is bonded to at least one of the semiconductor light emitting elements and the surface of the assembly substrate.
6. The method of claim 5 , wherein the silane coupling agent comprises a reactor for forming either one of a Si—O bond and a C—O bond with the semiconductor light emitting elements and the surface of the assembly substrate.
7. The method of claim 6 , wherein the silane coupling agent further comprises an intramolecular S—S bond.
8. The method of claim 6 , wherein the silane coupling agent further comprises an intramolecular nitro benzyl group.
9. The method of claim 6 , wherein when the silane coupling agent is coupled to a surface of the semiconductor light emitting elements and a surface of the assembly substrate, either one of the silane coupling agent coupled to the surface of the semiconductor light emitting elements and the silane coupling agent coupled to the surface of the assembly substrate further comprises an intramolecular conjugate diene, and the other one further comprises an intramolecular multiple bond.
10. The method of claim 7 , wherein the intramolecular S—S bond is broken by a reduction reaction.
11. The method of claim 8 , wherein a C—O bond of the intramolecular nitro benzyl group is broken by a UV light treatment.
12. The method of claim 5 , wherein, the cleaving of the covalent bond breaks a C—O bond or an intramolecular S—S bond of the silane coupling agent to cleave the silane coupling agent into at least two parts, and
wherein, after the cleaving of the covalent bonds, a first part of the at least two parts are connected to at least one of the semiconductor light emitting elements and a second part of the at least two parts are connected to the surface of the assembly substrate.
13. The method of claim 12 , wherein a silicon atom of the silane coupling agent is connected to the assembly substrate after the cleaving of the covalent bonds.
14. The method of claim 12 , wherein, after the cleaving of the covalent bonds, one silicon atom of the silane coupling agent is connected to the at least one of the semiconductor light emitting elements and another silicon atom of the silane coupling agent is connected to the assembly substrate.
15. The method of claim 2 , wherein the covalent bond is formed between the semiconductor light emitting elements and the predetermined compound bonded to the surface of the assembly substrate, or the covalent bond is formed between the predetermined compound bonded to the surface of the assembly substrate and the predetermined functional group formed on surfaces of the semiconductor light emitting elements.
16. The method of claim 1 , wherein the covalent bond formed between the semiconductor light emitting elements and the surface of the assembly substrate is cleaved by any one of a reduction reaction, a light treatment and a heat treatment.
17. A display device comprising:
a panel to display an image;
semiconductor light emitting elements disposed on the panel; and
a wiring substrate included in the panel, and configured to accommodate the semiconductor light emitting elements,
wherein the semiconductor light emitting elements include a coating of at least one of a predetermined functional group and a predetermined compound, the predetermined compound including a silane coupling agent having a broken covalent bond,
wherein the broken covalent bond includes a C—O bond or an intramolecular S—S bond of the silane coupling agent that is broken to cleave the silane coupling agent into at least two parts including a first part and a second part, and
wherein the first part or the second part is connected to the semiconductor light emitting elements.
18. The display device of claim 17 , wherein a silicon atom of the silane coupling agent is included in the first part or the second part that is connected to the semiconductor light emitting elements.