Quantum devices and methods using entangled photons and phonons
The present disclosure describes electron-photon and electron-phonon interactions in 2D material systems. In some embodiments, novel entangled states are implemented. Such entangled states may involve the superposition of electronic and phononic modes in these materials. The states may be utilized to realize the transduction of quantum information and sensing. In an aspect, the present disclosure may be a quantum sensor having a single-phonon emitter configured to emit a single phonon. A phononic transducer is configured to receive the emitted single phonon from the single-phonon emitter and propagate the single phonon. A phonon detector is configured to detect an arrival of the propagated single phonon received from the phononic transducer.
1. A quantum sensor, comprising:
a single-phonon emitter configured to emit a single phonon;
a phononic transducer configured to receive the emitted single phonon from the single-phonon emitter and propagate the single phonon; and
a phonon detector configured to detect an arrival of the propagated single phonon received from the phononic transducer.
2. The quantum sensor of claim 1 , wherein the single-phonon emitter comprises a single-electron emitter and/or a single-hole emitter configured to emit a single electron and/or a single hole which spontaneously emits a single phonon.
3. The quantum sensor of claim 2 , wherein the single-electron emitter and/or single-hole emitter comprises a van der Waals material.
4. The quantum sensor of claim 3 , wherein the single-electron emitter comprises:
a substrate;
a heterobilayer disposed on the substrate, wherein the heterobilayer comprises an n-type TMD coupled with a p-type TMD, and wherein the heterobilayer is configured as a quantum island for single-charge transport; and
wherein the heterobilayer is arranged between a source contact and a drain contact, and
wherein a gate is configured to selectively control charge transport through the heterobilayer.
5. The quantum sensor of claim 4 , wherein the n-type TMD is MoS 2 .
6. The quantum sensor of claim 4 , wherein the p-type TMD is WSe 2 .
7. The quantum sensor of claim 4 , wherein the substrate is h-BN.
8. The quantum sensor of claim 4 , wherein the n-type TMD and the p-type TMD are coupled via out-of-plane van der Waals interaction.
9. The quantum sensor of claim 4 , wherein the drain contact is configured with a bias voltage such that a phonon is emitted with each emitted photon.
10. The quantum sensor of claim 1 , wherein the phononic transducer is a monolayer dielectric having a length which is less than a phonon mean free path.
11. The quantum sensor of claim 10 , wherein the monolayer dielectric is a semiconductor with weak phonon-phonon coupling.
12. The quantum sensor of claim 1 , wherein the phonon detector is configured to convert phononic excitation into an electrical signal.
13. The quantum sensor of claim 12 , wherein the phonon detector comprises a carrier configured to sense a drag generated by a flux of a received phonon.
14. The quantum sensor of claim 13 , wherein the carrier of the photon detector comprises graphene.
15. The quantum sensor of claim 1 , wherein the phonon detector is a TMD single-electron transistor configured to sense a received phonon using phonon-assisted tunneling.
16. A system for detecting a distance to a subject, the system comprising;
a phonon-photon pair generator configured to emit a photon directed to a subject and a corresponding phonon directed to a phonon transducer, wherein the photon and the phonon are entangled;
a photon detector configured to receive the photon reflected from the subject;
a phonon detector configured to receive the corresponding phonon from the phonon-photon pair generator by way of the phonon transducer;
a processor in communication with the phonon detector and the photon detector, the processor configured to determine a distance to the subject based on an arrival time of the photon and an arrival time of the corresponding phonon.
17. The system of claim 16 , wherein the phonon-photon pair generator is a quantum emitter comprising a monolayer of a van der Waals material.
18. The system of claim 16 , further comprising a waveguide configured to direct photons emitted by the phonon-photon pair generator.
19. The system of claim 16 , wherein the phonon detector comprises a carrier material layer sensor configured to sense a drag on the carrier material caused by a phonon.
20. The system of claim 16 , wherein the phonon detector uses phonon-assisted tunneling to probe incident phonon flux.
21. The system of claim 16 , wherein the phonon transducer is a dielectric configured to span a distance between the phonon-photon pair generator and the phonon detector.
22. A single-phonon detector, comprising a 2D van der Waals carrier layer configured to sense a drag on the carrier generated by a flux of a phonon.
23. A method of estimating a distance to an object, the method comprising:
generating a photon and a corresponding phonon entangled with the photon;
directing the photon at an object;
directing the corresponding phonon to a phonon detector by way of a phonon transducer having a pre-determined length;
receiving the photon reflected off of the object;
receiving the corresponding phonon from the phonon transducer;
determining a distance to the subject based on an arrival time of the photon, an arrival time of the corresponding phonon, and/or the pre-determined length of the dielectric region.